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33results about How to "Act as passivation" patented technology

Terahertz modulator based on silicon-based microstructure on SOI, system and method

The invention provides a Terahertz modulator based on a silicon-based microstructure on SOI, a manufacturing method and a modulation system. The Terahertz modulator successively comprises an Al2O3 substrate of a bottom layer, a SiO2 isolation layer, the silicon-based microstructures, and an Al2O3 passivation layer from bottom to top. The silicon-based microstructures are periodically arranged on the SiO2 isolation layer. Each silicon-based microstructure comprises a two-layer square Si-based step structure. The modulation system comprises a semiconductor laser, a laser modulator, the Terahertzmodulator, a Terahertz radiation source, and a Terahertz detector. In the invention, a reflectivity which is lower than 22% is achieved for a Terahertz wave of 0.4 THz to 0.85 THz and a minimum of 18% can be reached at 0.82 THz so that the reflectivity of a modulation device to the Terahertz wave can be significantly reduced and a utilization rate of the Terahertz wave is improved. A 64.5% modulation depth can be achieved under 808 nm laser radiation with 1200 mw power. Compared with a traditional silicon-based Terahertz modulator, a Terahertz imaging diffusion area can effectively increase aresolution and make the resolution reach above 21.9% in an imaging system.
Owner:UNIV OF ELECTRONICS SCI & TECH OF CHINA

Anticorrosive aluminum product and preparation method thereof

The invention relates to the technical field of aluminum-based composite material, and provides an anticorrosive aluminum product and a preparation method thereof. A substrate layer is mainly prepared from the following components in parts by weight: 50 to 60 parts of aluminum powder, 20 to 30 parts of copper powder, 5 to 6 parts of nanometer zirconium dioxide, 3 to 4 parts of samarium element, 3 to 4 parts of ytterbium element and 1 to 2 parts of corrosion inhibitor. A coating layer is mainly prepared from the following components in parts by weight: 30 to 40 parts of epoxy resin, 5 to 7 parts of mesoporous SBA-15, 0.5 to 1.0 part of beta-(2,6-ditert-butyl-3-hydroxyphenyl)propionic octadecyl ester, 0.5 to 1.0 part of 2,5-ditert-butyl-3-methylphenol, 0.2 to 0.5 part of N-(fluclorolone methyl thiocarbonate)phthalimide, 0.2 to 0.5 part of benzimidazolyl methyl carbamate, 10 to 13 parts of stainless powder, and the like. The preparation method comprises the following steps of preparation of the substrate layer and the coating layer, spraying of paint and the like. The anticorrosive aluminum product has the advantages that the environment-friendly effect is realized, the comprehensive property is excellent, and the anticorrosive durability of the aluminum product is effectively improved.
Owner:玉林博飞商贸有限公司

Waste residue field reclamation soil matrix as well as preparation method and application

The invention provides a waste residue field reclamation soil matrix which comprises, by mass, 40%-75% of original soil, 10%-50% of engineering waste residues, 3%-8% of organic fertilizer and 3%-7% ofpine needles, and the ratio of the original soil to the engineering waste residues is 1:1-4:1. Meanwhile, the invention provides a preparation method and application thereof. According to the reclamation soil matrix, a large number of waste residues in a waste residue field can be effectively disposed, growth of plants is promoted, and the survival rate is increased. The natural soil, the engineering waste residues and the pine needles in the matrix form a loose and porous soil structure, so that air permeability and moisture transmission of soil are facilitated, formation of aggregates in the soil is facilitated, and survival and propagation of microorganisms are also facilitated. The organic fertilizer can effectively improve the fertility of the soil, improve original barren engineering waste residues and natural soil, provide nitrogen, phosphorus, potassium, organic matter and other nutrients needed by growth and development of plants, play a role in passivating heavy metal contained in municipal sludge and reduce harm possibly brought by the heavy metal in the soil. Main materials are wide in source and low in cost.
Owner:BEIJING JIAOTONG UNIV +1

High-hardness alloy steel for door frame and preparation method thereof

The invention discloses high-hardness alloy steel for a door frame and a preparation method thereof. The method comprises the steps of (1) carrying out water washing and oxygen-free calcination on the alloy steel, and then putting the alloy steel in sldium lauryl sulfate to be subjected to activating treatment; (2) carrying out thermal treatment of primary heating and secondary heating on the alloy steel; and (3) carrying out quenching, heating and cooling on the alloy steel subjected to thermal treatment, and then, putting the alloy steel into a magnesium chloride solution, so as to prepare the high-hardness alloy steel for the door frame, wherein the alloy steel comprises the following elements by weight percent: 0.65 to 0.85% of C, 0.15 to 0.35% of Si, 0.20 to 0.30% of Mn, 0.3 to 0.55% of Mo, 0.15 to 0.4% of Mg and 0.05 to 0.15% of Ge, and the balance being Fe; the primary heating comprises the steps of increasing the temperature from 20 to 25 DEG C to 520 to 540 DEG C at the temperature increase speed of 10 to 15 DEG C/min, and keeping the temperature at 520 to 540 DEG C for 110 to 130 min; and the secondary heating comprises the steps of increasing the temperature from 520 to 540 DEG C to 700 to 720 DEG C at the temperature increase speed of 20 to 25 DEG C/min, and keeping the temperature at 700 to 720 DEG C for 60 to 80 min. According to the invention, the door frame manufactured through the method has excellent mechanical properties like high strength and high hardness.
Owner:ANHUI KATA DOOR & WINDOW

Diamond field effect transistor based on Al2O3/SiNx double-layer gate medium and preparation method of diamond field effect transistor

The invention relates to a diamond field effect transistor based on an Al2O3 / SiNx double-layer gate medium and a preparation method of the diamond field effect transistor. The method comprises steps of selecting a diamond substrate; growing a hydrogen terminal adsorption layer on an upper surface of the diamond substrate; growing a source electrode and a drain electrode on an upper surface of thehydrogen terminal adsorption layer; growing an Al2O3 material on an upper surface of the source electrode, an upper surface of the drain electrode and the upper surface of the hydrogen terminal adsorption layer between the source electrode and the drain electrode to form a first dielectric layer; growing a SiNx material on an upper surface of the first dielectric layer to form a second dielectriclayer; and growing a gate electrode on an upper surface of the second dielectric layer. The method is advantaged in that an Al2O3 / SiNx double-layer structure is adopted as a gate medium, a layer of SiNx medium is deposited above a thin layer of Al2O3 medium, so gate capacitance can be reduced, the frequency characteristic of the device can be improved, the passivation effect can be achieved, and stability of the device can be remarkably enhanced.
Owner:XIDIAN UNIV

Manufacturing method of double-junction thin film solar cell module and cell module thereof

The invention discloses a method of double-junction thin film solar cell module and cell module thereof. The cell module is formed by connecting a plurality of battery units, each battery unit comprises a bottom battery and a top battery, wherein a patterned insulating layer and a back metal electrode layer electrically connected with the bottom battery are arranged on the bottom battery, and a patterned front metal electrode layer is arranged on the top battery, the bottom battery is a polycrystalline Ge bottom battery, and the top battery is a GaAs top cell, the layers of the bottom cells and the layers of the top cells are inverted and grown in an epitaxial manner, a tunnel junction N-type region and a tunnel junction P-type region are sequentially grown between the GaAs top battery andthe polycrystalline Ge bottom battery; an antireflection layer is formed on the front metal electrode layer and the top battery which is not covered by the front metal electrode layer. According to the manufacturing method of double-junction thin film solar cell module and cell module thereof, by adopting the inverted growth mode, the crystal quality is improved, and by adopting the method of one-time growth to complete the battery structure, the process can be simplified, and the yield of the product can be improved, in addition, by using Ge as the bottom battery, there is no need for a complicated battery structure and current transmission is improved.
Owner:DONGTAI HI TECH EQUIP TECH (BEIJING) CO LTD

Double-heterojunction MOS-HEMT component

The invention discloses a double-heterojunction MOS-HEMT (metal oxide semiconductor-high electron mobility transistor) component comprising a GaN nucleating layer 9, a GaN buffer layer 8, an InGaN embedding layer 7 and a GaN channel layer 6 which are sequentially formed on a sapphire substrate 10, an AlN barrier layer 5 and an Al2O3 gate dielectric layer 4, a source electrode 1 and a drain 3 formed on the AlN barrier layer 5, and a gate electrode 2 formed on the Al2O3 gate dielectric layer 4, wherein the double-heterojunction MOS-HEMT component is characterized in that an AlN material having good heat conductivity and larger band gap is used as the barrier layer, thus reducing the self-heating effect and gate leakage current of the component and reducing the threshold voltage of the component working in a depletion mode; by using the AlN material having strong polarizability, the invention can increase the electron concentration in the channel and increase the output power of the saturation current and the component; by using the Al2O3 material deposited on the basis of the atomic layer deposition process as the gate dielectric layer, the invention can greatly reduce the gate leakage current and increase the breakdown voltage of the component; and by using the reverse polarization of the InGaN material, the invention can increase the conduction band energy of the buffer layer and reduce the current collapse effect of the component.
Owner:SHANGHAI INST OF TECHNICAL PHYSICS - CHINESE ACAD OF SCI

Passivation-contact-based floating-junction back-passivation crystalline silicon battery and preparation method thereof

The invention discloses a passivation-contact-based floating-junction back-passivation crystalline silicon battery and a preparation method thereof. The crystalline silicon battery comprises a p typesilicon substrate, a tunneling oxide layer form on the back surface of the p type silicon substrate, and an n type polysilicon layer formed on the back surface of the tunneling oxide layer. The tunneling oxide layer and the n type polysilicon layer form a floating junction; and an open hole is formed in a preset position of the floating junction. In addition, the crystalline silicon battery also includes a metal electrode that is formed on the back surface of the n type polysilicon layer and is in contact with the exposed p type silicon substrate through the open hole and a first dielectric layer that is arranged between the n type polysilicon layer and the metal electrode in the open hole. According to the invention, since the tunneling oxide layer and the n type polysilicon layer can beresistant to the high temperature in metal electrode preparation without any change and can be protected from being damaged by the high temperature, the influence on the floating junction by the high-temperature sintering process is eliminated, so that the passivation effect on the crystalline silicon battery by the floating junction is improved.
Owner:SUZHOU TALESUN SOLAR TECH CO LTD +1
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