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An organic-inorganic composite thermoelectric thin film and its preparation method

A thermoelectric thin film and inorganic composite technology, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, vacuum evaporation coating, etc., can solve the problems of poor controllability, complicated preparation technology and process, and achieve short cycle time , simple process and high controllability

Active Publication Date: 2021-11-09
DONGHUA UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0004] The technical problem to be solved by the present invention is to provide an organic-inorganic composite thermoelectric thin film and its preparation method, in which the inorganic thermoelectric nanoparticles are monodispersed and uniformly distributed in the organic matrix, so as to overcome the defects of complex process and poor controllability of the existing preparation technology, In the present invention, the double-pass aluminum oxide film is used as a template to prepare an array of inorganic thermoelectric nanoparticles on a substrate through physical vapor deposition; then a conductive polymer film is deposited on the surface to obtain an organic-inorganic composite thermoelectric film

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Examples

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Embodiment 1

[0027] (1) Attach a double-pass aluminum oxide film with a hole diameter of about 100nm, a thickness of about 200nm, and a hole spacing of about 250nm on a silicon wafer substrate with a size of about 10mm*10mm;

[0028] (2) With P-type Bi 2 Te 3 The powder is the target material, and the pressure in the cavity is 10 -5 mbar, the evaporation rate is 0.5nm / s, and the evaporation time is 2min, and it is vacuum thermally evaporated onto the silicon wafer substrate with double-pass aluminum oxide film attached in step (1), Bi 2 Te 3 The thickness is about 60nm;

[0029] (3) Use polyimide high-temperature tape to slowly paste on the surface of the sample obtained in step (2), gently press the entire surface to fully bond the tape to the aluminum oxide film, then tear off the tape to obtain Bi 2 Te 3 nanoparticle arrays;

[0030] (4) Mix polyethylenedioxythiophene-polystyrene sulfonate (PEDOT:PSS) aqueous solution with its 5% volume fraction of DMSO solvent, stir magnetically ...

Embodiment 2

[0035] (1) Attach a double-pass aluminum oxide film with a hole diameter of about 100nm, a thickness of about 200nm, and a hole spacing of about 250nm on a silicon wafer substrate with a size of about 10mm*10mm;

[0036] (2) With P-type Sb 2 Te 3 The powder is the target material, and the pressure in the cavity is 10 -5 mbar, the evaporation rate is 0.5nm / s, and the evaporation time is 2min, and it is vacuum thermally evaporated onto the silicon wafer substrate with double-pass aluminum oxide film attached in step (1), Sb 2 Te 3 The thickness is about 60nm;

[0037] (3) Use polyimide high-temperature tape to slowly paste on the surface of the sample obtained in step (2), gently press the entire surface to fully bond the tape to the aluminum oxide film, and then tear off the tape to obtain Sb 2 Te 3 nanoparticle arrays;

[0038] (4) Mix the PEDOT:PSS aqueous solution with its volume fraction of 5% DMSO solvent, stir it magnetically for 30min, drip the obtained solution on...

Embodiment 3

[0041] (1) Attach a double-pass aluminum oxide film with a hole diameter of about 100nm, a thickness of about 200nm, and a hole spacing of about 250nm on a silicon wafer substrate with a size of about 10mm*10mm;

[0042] (2) With P-type Bi 2 Te 3 The powder is the target material, and the pressure in the cavity is 10 -5 mbar, the evaporation rate is 0.5nm / s, and the evaporation time is 2min, and it is vacuum thermally evaporated onto the silicon wafer substrate with double-pass aluminum oxide film attached in step (1), Bi 2 Te 3 The thickness is about 60nm;

[0043] (3) Use polyimide high-temperature tape to slowly paste on the surface of the sample obtained in step (2), gently press the entire surface to fully bond the tape to the aluminum oxide film, then tear off the tape to obtain Bi 2 Te 3 nanoparticle arrays;

[0044] (4) Mix 0.1 g of intrinsic polyaniline (PANI) powder with camphorsulfonic acid at a molar ratio of 2:1, place it in an agate mortar and grind it for ...

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Abstract

The invention relates to an organic-inorganic composite thermoelectric thin film and a preparation method thereof. The thin film uses a double-pass aluminum oxide film as a template, and prepares an array of inorganic thermoelectric nano particles on a substrate through physical vapor deposition; then deposits a conductive polymer on its surface Thin film, that is. The method of the invention is simple and highly controllable, and is conducive to large-scale and rapid preparation of thermoelectric thin films, and the inorganic thermoelectric nanoparticles are evenly dispersed in the polymer matrix, which is conducive to obtaining high thermoelectric properties and has good application prospects.

Description

technical field [0001] The invention belongs to the field of thermoelectric thin film material and its preparation, in particular to an organic-inorganic composite thermoelectric thin film and its preparation method. Background technique [0002] Thermoelectric materials are functional materials that utilize the Seebeck effect and Peltier effect of semiconductor materials to directly convert thermal energy and electrical energy into each other. Thermoelectric conversion technology has the characteristics of small system size, high reliability, no emission of pollutants, and wide applicable temperature range. It has been applied to industrial waste heat, recycling of automobile exhaust, micro power supply of aerospace detectors, micro-zone cooling and biomedicine, etc. Many fields. Its green and environment-friendly characteristics can effectively alleviate the increasing environmental pollution and energy crisis in the world today. Therefore, high-performance thermoelectric...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L35/26H01L35/16H01L35/34C23C14/06C23C14/24H10N10/857H10N10/01H10N10/852
CPCC23C14/0623C23C14/06C23C14/24H10N10/857H10N10/852H10N10/01
Inventor 王黎明覃小红熊健刘烨俞建勇
Owner DONGHUA UNIV