An organic-inorganic composite thermoelectric thin film and its preparation method
A thermoelectric thin film and inorganic composite technology, which is applied in the manufacture/processing of thermoelectric devices, thermoelectric device node lead-out materials, vacuum evaporation coating, etc., can solve the problems of poor controllability, complicated preparation technology and process, and achieve short cycle time , simple process and high controllability
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Embodiment 1
[0027] (1) Attach a double-pass aluminum oxide film with a hole diameter of about 100nm, a thickness of about 200nm, and a hole spacing of about 250nm on a silicon wafer substrate with a size of about 10mm*10mm;
[0028] (2) With P-type Bi 2 Te 3 The powder is the target material, and the pressure in the cavity is 10 -5 mbar, the evaporation rate is 0.5nm / s, and the evaporation time is 2min, and it is vacuum thermally evaporated onto the silicon wafer substrate with double-pass aluminum oxide film attached in step (1), Bi 2 Te 3 The thickness is about 60nm;
[0029] (3) Use polyimide high-temperature tape to slowly paste on the surface of the sample obtained in step (2), gently press the entire surface to fully bond the tape to the aluminum oxide film, then tear off the tape to obtain Bi 2 Te 3 nanoparticle arrays;
[0030] (4) Mix polyethylenedioxythiophene-polystyrene sulfonate (PEDOT:PSS) aqueous solution with its 5% volume fraction of DMSO solvent, stir magnetically ...
Embodiment 2
[0035] (1) Attach a double-pass aluminum oxide film with a hole diameter of about 100nm, a thickness of about 200nm, and a hole spacing of about 250nm on a silicon wafer substrate with a size of about 10mm*10mm;
[0036] (2) With P-type Sb 2 Te 3 The powder is the target material, and the pressure in the cavity is 10 -5 mbar, the evaporation rate is 0.5nm / s, and the evaporation time is 2min, and it is vacuum thermally evaporated onto the silicon wafer substrate with double-pass aluminum oxide film attached in step (1), Sb 2 Te 3 The thickness is about 60nm;
[0037] (3) Use polyimide high-temperature tape to slowly paste on the surface of the sample obtained in step (2), gently press the entire surface to fully bond the tape to the aluminum oxide film, and then tear off the tape to obtain Sb 2 Te 3 nanoparticle arrays;
[0038] (4) Mix the PEDOT:PSS aqueous solution with its volume fraction of 5% DMSO solvent, stir it magnetically for 30min, drip the obtained solution on...
Embodiment 3
[0041] (1) Attach a double-pass aluminum oxide film with a hole diameter of about 100nm, a thickness of about 200nm, and a hole spacing of about 250nm on a silicon wafer substrate with a size of about 10mm*10mm;
[0042] (2) With P-type Bi 2 Te 3 The powder is the target material, and the pressure in the cavity is 10 -5 mbar, the evaporation rate is 0.5nm / s, and the evaporation time is 2min, and it is vacuum thermally evaporated onto the silicon wafer substrate with double-pass aluminum oxide film attached in step (1), Bi 2 Te 3 The thickness is about 60nm;
[0043] (3) Use polyimide high-temperature tape to slowly paste on the surface of the sample obtained in step (2), gently press the entire surface to fully bond the tape to the aluminum oxide film, then tear off the tape to obtain Bi 2 Te 3 nanoparticle arrays;
[0044] (4) Mix 0.1 g of intrinsic polyaniline (PANI) powder with camphorsulfonic acid at a molar ratio of 2:1, place it in an agate mortar and grind it for ...
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