Method for preparing silicon oxide on silicon wafer surface
A silicon oxide, silicon wafer surface technology, used in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as difficult insulating layers, and achieve the effect of reducing reaction temperature and expanding application prospects
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Embodiment 1
[0036] See figure 1 In one embodiment, a method for preparing silicon oxide on the surface of a silicon wafer. The silicon wafer may be silicon, germanium, or other semiconductor substrates. The method includes:
[0037] A1: Preparation of porous silicon precursor on the surface of silicon wafer: Place the silicon wafer substrate in an etching solution containing ethanol and fluorine-containing reagents, with the silicon wafer substrate as the positive electrode and platinum wire as the negative electrode, and the reaction is carried out in a constant current mode , Forming a porous silicon film on the surface;
[0038] A2: Preparation of silicon dioxide film: the silicon wafer substrate and platinum wire obtained in step A1 are placed in an acid solution, with the silicon wafer substrate as the positive electrode and the platinum wire as the negative electrode, and the reaction is carried out in a constant pressure mode at room temperature ( The reaction time is 10 minutes), and a...
Embodiment 2
[0055] This embodiment relates to a method for preparing a silicon oxide insulating layer on the surface of a silicon wafer containing vertical through silicon holes. The aspect ratio of the microchannel selected in this embodiment is 1:5, and the resistivity is 10 -2 Ω; The specific steps are as follows:
[0056] Step 1): Use acetone, alcohol, and deionized water to ultrasonically clean the silicon wafers at 25°C. The cleaning time is 5 minutes, respectively, and then blow dry for later use;
[0057] Step 2): The corrosion solution is prepared as follows: First, add 250mL of 95% pure ethanol into a polytetrafluoroethylene container, and then add 50ml of 40% hydrofluoric acid solution under magnetic stirring, stir for 20 minutes and then let it stand. Obtain a clear solution. Then place the silicon wafers cleaned in step 1) with polyimide tape to cover the parts that do not need to be reacted, and place them in the configured etching solution together with the platinum wire, with t...
Embodiment 3
[0063] This embodiment relates to a method for preparing a silicon oxide insulating layer on the surface of a silicon wafer containing vertical through silicon holes. The aspect ratio of the microchannel selected in this embodiment is 1:10, and the resistivity is 20Ω. The specific steps are as follows:
[0064] Step 1): Under the condition of 25 degrees Celsius, use acetone, alcohol and deionized water to ultrasonically clean the silicon wafers, the cleaning time is 5 minutes, respectively, and then blow dry for use;
[0065] Step 2): The corrosion solution is prepared as follows: First, add 250mL of 95% pure ethanol into a polytetrafluoroethylene container, and then add 50ml of 40% hydrofluoric acid solution under magnetic stirring, stir for 20 minutes and then let it stand. Obtain a clear solution. Then place the silicon wafers cleaned in step 1) with polyimide tape to cover the parts that do not need to be reacted, and place them in the configured etching solution together with ...
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Abstract
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