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Humidity sensor, preparation method thereof, non-contact control screen and application

A humidity sensor, non-contact technology, applied in the direction of instruments, scientific instruments, mechanical mode conversion, etc., can solve the problems of expensive preparation equipment, complex preparation process, etc., to achieve information input, high response switch ratio, high yield Effect

Inactive Publication Date: 2020-04-03
INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, common non-contact sensors often require more complicated preparation processes and expensive preparation equipment, such as infrared sensors

Method used

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  • Humidity sensor, preparation method thereof, non-contact control screen and application
  • Humidity sensor, preparation method thereof, non-contact control screen and application
  • Humidity sensor, preparation method thereof, non-contact control screen and application

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preparation example Construction

[0027] The invention discloses a preparation method of a humidity sensor, comprising:

[0028] preparing interdigitated electrodes on the substrate;

[0029] A humidity sensitive material is prepared on a substrate prepared with interdigitated electrodes, that is, the humidity sensor is obtained.

[0030] In some embodiments of the present invention, the moisture-sensitive material includes molybdenum trioxide nanosheets.

[0031] In some embodiments of the present invention, the preparation method of the molybdenum trioxide nanosheets includes:

[0032] Ammonium heptamolybdate tetrahydrate is dissolved in deionized water, and then nitric acid solution is added to carry out hydrothermal reaction. After the hydrothermal reaction is completed, the obtained white powder is annealed to obtain the molybdenum trioxide nanosheet.

[0033] In some embodiments of the present invention, the concentration of ammonium heptamolybdate tetrahydrate is 0.7 to 1.1 g / mL;

[0034] In some emb...

Embodiment 1

[0081] Preparation of MoO by hydrothermal method 3 Nanosheets. The specific steps are:

[0082] (1) Dissolve 0.88 g of ammonium heptamolybdate tetrahydrate in deionized water with a volume of 10 mL, and stir thoroughly.

[0083] (2) Add the nitric acid solution with a concentration of 4.5 mol / L dropwise into the ammonium heptamolybdate tetrahydrate aqueous solution described in step (1), and fully stir.

[0084] (3) Transfer the above-mentioned mixed solution into a reaction kettle, keep the heating temperature at 180° C., and the heating time for 180 minutes, and collect the generated white powder.

[0085] (4) Put the white powder synthesized by the hydrothermal method in a high-temperature tube furnace, anneal at 450°C for 30 minutes, wait for the tube furnace to cool to room temperature, and collect the annealed powder as MoO 3 Nanosheet powder. XRD of the powder as figure 1 As shown, it is α-phase MoO 3 .

[0086] (5) MoO 3 The nanosheet powder is ultrasonically d...

Embodiment 2

[0091] (1) Dissolve 0.95 g of ammonium heptamolybdate tetrahydrate in deionized water with a volume of 8 mL, and stir thoroughly.

[0092] (2) Add the nitric acid solution with a concentration of 5 mol / L dropwise into the ammonium heptamolybdate tetrahydrate solution described in step (1), and fully stir.

[0093] (3) Transfer the above-mentioned mixed solution into a reaction kettle, keep the heating temperature at 170° C., and the heating time at 210 minutes, and collect the generated white powder.

[0094] (4) Put the white powder synthesized by the hydrothermal method in a high-temperature tube furnace, anneal at 500°C for 40 minutes, wait for the tube furnace to cool to room temperature, and collect the annealed powder as MoO 3 Nanosheet powder.

[0095] (5) MoO 3 The nanosheet powder is ultrasonically dispersed in ethanol, and the concentration of the dispersion is 0.05 g / mL.

[0096] (6) Prepare an ITO electrode array on a flexible PET substrate with a thickness of 6...

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Abstract

The invention discloses a humidity sensor and a preparation method thereof, a non-contact control screen and application. The preparation method of the humidity sensor comprises the following steps: preparing an interdigital electrode on a substrate; and preparing a humidity-sensitive material on the substrate on which the interdigital electrode is prepared to obtain the humidity sensor. The method for preparing the MoO3 nanosheet has the advantages of being high in yield, easy to operate and extremely low in cost; at present, a non-contact control screen or a control switch on the market is mainly based on capacitive or infrared sensing; the transparent flexible non-contact control screen based on the humidity sensor array is constructed by using the humidity sensor and the flexible PET substrate which are lower in manufacturing cost and excellent in performance for the first time, so that the application potential and the application range of the non-contact control screen are expanded.

Description

technical field [0001] The invention belongs to the technical field of preparation of flexible electronic devices, and in particular relates to a humidity sensor, a preparation method thereof, a non-contact control panel and applications thereof. Background technique [0002] With the development of the Internet, human-computer interaction becomes more and more important, and there are more and more interactive methods, so it is particularly important to develop various human-computer interaction methods. As a "translator" for human-computer interaction, sensors can effectively convert signals from various human bodies into information that can be recognized by machines. Common human-computer interaction sensors often require the human body to have direct physical contact with it to generate signals, such as pressure sensors. Therefore, mechanical wear of the sensor is inevitable, or limited in some applications, such as toxic and harmful environments. Therefore, non-conta...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G01N27/12G06F3/01G06F21/36H03K17/945
CPCG01N27/121G01N27/126G01N27/127G06F3/017G06F21/36H03K17/945
Inventor 杨珏晗史瑞龙沈国震娄正
Owner INST OF SEMICONDUCTORS - CHINESE ACAD OF SCI
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