A preparation process for heat dissipation packaging of compact igbt modules

Abstract

The invention discloses a preparation process for heat dissipation packaging of a compact IGBT module, which belongs to the field of IGBT packaging technology, and a preparation process for heat dissipation packaging of a compact IGBT module. The IGBT is completed through the packaging of silica gel and ring resin The heat dissipation and insulation work of the compact IGBT module realizes the heat dissipation of the compact IGBT module. The heat preservation and heat dissipation effect of the silica gel is increased by adding phase change balls to the silica gel. When the temperature of the silica gel is too high, the phase change ball liquefies and absorbs a large amount of heat, making the silica gel The temperature is not easy to rise too fast, which assists in heat dissipation. At this time, the liquefied phase change balls flow into the capillary pores of the silica gel, which will increase the contact area between the silica gel and the phase change balls, and greatly increase the heat exchange efficiency between the silica gel and the phase change balls. When the IGBT module works in a low temperature environment, when the temperature of the silica gel drops sharply due to the environment, the liquid phase change ball will solidify and release a lot of heat to keep the working environment of the electronic components warm.

Description

technical field [0001] The invention relates to the field of IGBT packaging technology, in particular to a preparation technology for heat dissipation packaging of compact IGBT modules. Background technique [0002] IGBT, Insulated Gate Bipolar Transistor, is a composite fully-controlled voltage-driven power semiconductor device composed of BJT (Bipolar Transistor) and MOS (Insulated Gate Field Effect Transistor), with high input impedance and GTR of MOSFET The advantages of low conduction voltage drop, GTR saturation voltage drop, high current density, but large drive current, MOSFET drive power is small, fast switching speed, but large conduction voltage drop, small current density, IGBT Combining the advantages of the above two devices, the drive power is small and the saturation voltage is reduced. It is very suitable for the conversion system with a DC voltage of 600V and above, such as AC motors, frequency converters, switching power supplies, lighting circuits, tracti...

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