Composite light absorption layer solar cell and preparation method thereof
A technology of solar cells and light-absorbing layers, applied in the field of solar cells, can solve problems such as poor output performance of solar cells, low absorption efficiency, and limited light energy utilization rate, so as to enhance absorption utilization rate, improve battery performance, and facilitate current carrying The effect of the subtransfer
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Embodiment 1
[0041] A composite light-absorbing layer solar cell of the present invention, specifically CsPbBr 3 Perovskite / CsPbBr 3 Quantum dot composite light-absorbing layer solar cell, its structure is as follows figure 1 As shown, the solar cell with composite light-absorbing layer includes FTO conductive glass layer, TiO 2 Thin film layer, composite light-absorbing layer and carbon electrode layer, the composite light-absorbing layer is composed of CsPbBr arranged in sequence from bottom to top 3 Perovskite film layer and CsPbBr 3 Quantum dot film layer composition.
[0042] In this example, CsPbBr 3 The thickness of the quantum dot film layer is 50nm.
[0043] A preparation method of the composite light-absorbing layer solar cell of the above-mentioned present embodiment, comprising the following steps:
[0044] (1) Preparation of TiO 2 Film layer:
[0045] Use glass cleaner, acetone, isopropanol and absolute ethanol to ultrasonically clean the FTO conductive glass for 30 m...
Embodiment 2
[0068] A composite light-absorbing layer solar cell of the present invention has basically the same structure as the composite light-absorbing layer solar cell in Example 1, the only difference being: CsPbBr 3 The thickness of the quantum dot film layer is 30nm.
[0069] A preparation method of the composite light-absorbing layer solar cell of this embodiment is basically the same as that of Example 1, the only difference being that CsPbBr 3 The coating-drying times of the quantum dot precursor solution is 1 time.
[0070] The performance of the composite light-absorbing layer solar cell prepared in this example was tested, and the result was that the short-circuit current density was 5.49mA / cm 2 , Open circuit voltage 1.35V, fill factor 67.7%, conversion efficiency 5.03%.
Embodiment 3
[0072] A composite light-absorbing layer solar cell of the present invention is basically the same structure as the composite light-absorbing layer solar cell in Example 1, the only difference being: wherein, CsPbBr 3 The thickness of the quantum dot film layer is 70nm.
[0073] A preparation method of the composite light-absorbing layer solar cell of this embodiment is basically the same as that of Example 1, the only difference being that CsPbBr 3 The number of times of coating-drying of the quantum dot precursor solution is 3 times.
[0074] The performance of the composite light-absorbing layer solar cell prepared in this example was tested, and the result was that the short-circuit current density was 5.56mA / cm 2 , Open circuit voltage 1.33V, fill factor 69.8%, conversion efficiency 5.16%.
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