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Mask blank, transfer mask, and method for manufacturing semiconductor device

A technology of mask blanks and semiconductors, which is applied to the originals for photomechanical processing, the photoplate process of patterned surfaces, and instruments, etc. It can solve the problems of low tolerance, line width change, thickening, etc., and achieve improved light resistance Effect

Pending Publication Date: 2020-05-08
HOYA CORP
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, as disclosed in Patent Document 1, it has been found in recent years that MoSi-based films have low resistance to light for exposure to ArF excimer laser light (wavelength 193 nm) (so-called ArF light resistance).
That is, in the case of a phase shift mask using a transition metal silicide-based material such as MoSi, the ArF excimer laser irradiation of the exposure light source causes changes in transmittance and phase difference, and further changes in line width (thickening ) this phenomenon

Method used

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  • Mask blank, transfer mask, and method for manufacturing semiconductor device
  • Mask blank, transfer mask, and method for manufacturing semiconductor device
  • Mask blank, transfer mask, and method for manufacturing semiconductor device

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0118] This Example 1 relates to the production of a mask blank and a transfer mask for producing a transfer mask (phase shift mask) using ArF excimer laser light with a wavelength of 193 nm as exposure light.

[0119] The mask blank 10 used in Example 1 is figure 1 As shown, a phase shift film 2 , a light shielding film 3 , and a hard mask film 4 are sequentially stacked on a light-transmitting substrate 1 . This mask blank 10 was fabricated as follows.

[0120] A light-transmitting substrate 1 (size about 152 mm×152 mm×thickness about 6.35 mm) made of synthetic quartz glass was prepared. The main surface and end surfaces of the translucent substrate 1 are polished to a predetermined surface roughness (for example, the root mean square roughness Rq of the main surface is 0.2 nm or less).

[0121] Next, a light-transmitting substrate 1 was set in a single-sheet RF sputtering apparatus, and krypton (Kr), helium (He), and nitrogen (N 2 ) of mixed gas (flow ratio Kr: He: N 2 ...

Embodiment 2

[0148] The mask blank 10 used in this Example 2 was produced as follows.

[0149] A light-transmitting substrate 1 (about 152 mm x 152 mm x thickness about 6.35 mm in size) made of synthetic quartz glass, which is the same as the light-transmitting substrate used in Example 1, was prepared.

[0150] Next, a light-transmitting substrate 1 was set in a single-sheet RF sputtering apparatus, and krypton (Kr), helium (He), and nitrogen (N 2 ) of mixed gas (flow ratio Kr: He: N 2 =3:16:4, pressure=0.24Pa) as the sputtering gas, the electric power of the RF power supply is set to 1.5kW, by reactive sputtering (RF sputtering), on the light-transmitting substrate 1 with a thickness of 62nm A phase shift film 2 made of silicon and nitrogen (Si:N=46.9 atomic %: 53.1 atomic %) was formed. Here, the composition of the phase shift film 2 is a result obtained by measuring a phase shift film formed on another translucent substrate under the same conditions as above by X-ray photoelectron sp...

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Abstract

Provided is a mask blank 10 formed by stacking a phase shift film 2 made of a material consisting of silicon and nitrogen, a light shielding film 3, and a hard mask film 4 on a light transmissive substrate 1, said mask blank being configured such that when analyzing the phase shift film with secondary ion mass spectrometry and acquiring the secondary ion intensity distribution of silicon toward the depth of the phase shift film, the slope of the secondary ion strength [counts / sec] of the silicon is less than 150 [(counts / sec) / nm] relative to the depth [nm] in a direction toward the light transmissive substrate in the inner region of the phase shift film excluding the region near the substrate and the surface region.

Description

technical field [0001] The present invention relates to a mask blank, a transfer mask, and a method for manufacturing a semiconductor device using the transfer mask. In particular, the present invention relates to a mask blank, a transfer mask, and a method for manufacturing a semiconductor device suitable for use of short-wavelength light having a wavelength of 200 nm or less as exposure light. Background technique [0002] In general, in the manufacturing process of a semiconductor device, a fine pattern is formed using a photolithography method. In addition, several substrates called transfer masks (photomasks) are generally used for the formation of the fine pattern. The transfer mask is generally provided with a fine pattern made of a metal thin film or the like on a light-transmitting glass substrate. Photolithography is also used in the manufacture of this transfer mask. [0003] Since this transfer mask is an original plate for transferring the same fine pattern i...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): G03F1/32G01N23/2258G03F1/58
CPCG01N23/2258G03F1/32G03F1/58G03F7/2006
Inventor 前田仁宍户博明
Owner HOYA CORP
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