Texturing additive for monocrystalline silicon wafer and application thereof

A single crystal silicon wafer and additive technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of lowering the photoelectric conversion efficiency of the cell and the discount of the texturing effect, and achieve the best practical value and low cost. , the effect of shortening the texturing time

Inactive Publication Date: 2020-05-12
CHANGZHOU SHICHUANG ENERGY CO LTD
View PDF7 Cites 1 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In order to increase production capacity, it is necessary to reduce the texturing time as much as possible, but if the texturing time is simply shortened, it is likely that the texturing effect will be greatly reduced, which in turn will increase the reflectivity of the textured sheet, and the increase in reflectivity will lower the battery sheet photoelectric conversion efficiency

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment Construction

[0025] The specific implementation of the present invention will be further described below in conjunction with the examples. The following examples are only used to illustrate the technical solutions of the present invention more clearly, but not to limit the protection scope of the present invention.

[0026] The invention provides a method for making texturing of a monocrystalline silicon wafer, and the specific steps include:

[0027] 1) Preparation of wool additives: 0.2% to 4% of natural water-soluble polymers, 0.15% to 0.5% of sodium humate, 1% to 2% of potassium sorbate, 1.5% to 3.5% % sodium acetate is added to the remaining water, and mixed evenly to make a texture additive;

[0028] The natural water-soluble macromolecule is selected from one or more of plant gum, animal glue, alginate;

[0029] The vegetable gum is selected from one or more of hollyhock gum, locust bean gum, soybean gum, and guar gum;

[0030] The animal glue is selected from one or both of bone...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
reflectanceaaaaaaaaaa
reflectanceaaaaaaaaaa
reflectanceaaaaaaaaaa
Login to view more

Abstract

The invention discloses a texturing additive for a monocrystalline silicon wafer. The texturing additive comprises the following components in percentage by mass: 0.2%-4% of a water-soluble polymer, 0.15%-0.5% of sodium humate, 1%-2% of potassium sorbate, 1.5%-3.5% of sodium acetate and the balance of water. The additive disclosed by the invention is added into a texturing liquid of the monocrystalline silicon wafer, so that the texturing time can be shortened, and the texturing wafer with low reflectivity can be obtained.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to a texturing additive for monocrystalline silicon wafers and an application thereof. Background technique [0002] Texturing is an important link in the production process of solar cells. Through the texturing process, a pyramid-like tetrahedral structure is formed on the surface of the silicon wafer. The textured structure can make the incident light reflect and refract multiple times on the surface of the silicon wafer. , reduce the reflectivity of the silicon wafer surface, thereby improving the photoelectric conversion efficiency. The reflectivity of the textured sheet under the existing single crystal texturing process is 11% to 12%, and the texturing time usually takes 600s to 900s. [0003] With the increasing share of monocrystalline silicon in the crystalline silicon solar cell market in recent years, the requirements for the production capacity of monocrystalline silicon wa...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 张丽娟周树伟陈培良贺婷婷
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products