Looking for breakthrough ideas for innovation challenges? Try Patsnap Eureka!

Electrostatic spinning anti-virus thin layer and application in anti-virus field thereof

An electrospinning and anti-virus technology, applied in the direction of electrospinning, application, coating, etc., can solve the problems of easily leaking microorganisms, antibacterial agents are not durable, antibacterial agents are easy to fall off, etc., and achieve strong bactericidal effect and good biophase capacitive, strong antibacterial effect

Active Publication Date: 2020-05-15
FUJIAN NORMAL UNIV
View PDF20 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the biggest disadvantage of these two methods is that the antibacterial agent on the surface of the fabric is very easy to fall off, and the antibacterial effect is obviously weakened after repeated washing, so it cannot be widely used in the field of life and medical treatment (Lu Longxi et al., Antibacterial effect of new silver-embedded fiber fabrics Performance research, Chinese Journal of Disinfection, 2017, 34 (3): 214-217; Li Ling et al., Investigation of bacterial contamination of ICU medical staff masks in tropical areas, Hainan Medicine, 2018, 10 (29): 1468-1469)
Moreover, the mask filter material prepared by textile method has uneven pore size, and microorganisms are easily leaked at the corners of the pore surface, which greatly reduces the effect of sterilization.
[0008] In order to solve the problem that the ventilation holes of current masks are not selective, the sterilization depends on the walls of the holes to block microorganisms or viruses, the aperture is too small to affect the ventilation effect, and the antibacterial agents that may be carried on the masks are not durable and toxic, especially the toxic antibacterial that falls off Agents may directly enter the human body to affect health and masks cannot be reused. The invention relates to an electrospun anti-virus thin layer and its application in the field of anti-virus

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0031] An electrospinning antiviral thin layer of the present invention and its application in the antiviral field are characterized in that:

[0032] The electrospun antiviral thin layer is composed of a blend of polyethylene glycol with a molecular weight of 20,000, α-cyclodextrin, polyvinylidene fluoride with a molecular weight of 1,300,000, and silver ions covering the surface of the non-woven fabric. Polyethylene glycol on the cloth surface covering layer passes through the lumen hydrophobic part of α-cyclodextrin, and metal ions form an organometallic framework structure. The molar ratio of polyethylene glycol, α-cyclodextrin, polyvinylidene fluoride, silver ions and polyethylene glycol pore-forming agent with a molecular weight of 300 is 1: 1: 0.2: 0.005: 0.0001.

[0033] The electrospun anti-virus thin layer meets the following requirements at the same time: the melting point is 180°C, the pore size is 20 µm, no penetration occurs in the synthetic blood penetration tes...

Embodiment 2

[0038] An electrospinning antiviral thin layer of the present invention and its application in the antiviral field are characterized in that:

[0039] The electrospun antiviral thin layer is composed of a blend of polyethylene glycol with a molecular weight of 5000, α-cyclodextrin, polyvinylidene fluoride with a molecular weight of 1,500,000, and silver ions covering the surface of the non-woven fabric. The polyethylene glycol of the cloth surface covering layer passes through the inner cavity hydrophobic part of α-cyclodextrin, and the metal ions form an organometallic framework structure. The molar ratio of polyethylene glycol, α-cyclodextrin, polyvinylidene fluoride, silver ions, and polyethylene glycol pore-forming agent with a molecular weight of 100 is 1: 5: 1: 1: 0.0001.

[0040] The electrospun anti-virus thin layer meets the following requirements at the same time: the melting point is 150°C, the pore size is 0.3 µm, it can selectively pass through air to prevent the ...

Embodiment 3

[0045] An electrospinning antiviral thin layer of the present invention and its application in the antiviral field are characterized in that:

[0046] The electrospun antiviral thin layer is covered by a blend of polyethylene glycol with a molecular weight of 100,000, β-cyclodextrin, polyvinylidene fluoride-hexafluoropropylene with a molecular weight of 1,500,000, and copper ions on the non-woven fabric. The surface composition is that the polyethylene glycol on the non-woven surface covering layer passes through the hydrophobic part of the inner cavity of the β-type cyclodextrin, and the metal ions form an organic metal framework structure. The molar ratio of polyethylene glycol, β-cyclodextrin, polyvinylidene fluoride-hexafluoropropylene, copper ion and polyvinyl alcohol pore-forming agent with a molecular weight of 700 is 1: 0.01: 5: 0.001: 0.1.

[0047] The electrospun antiviral thin layer meets the following requirements at the same time: the melting point is within the r...

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
melting pointaaaaaaaaaa
pore sizeaaaaaaaaaa
tensile strengthaaaaaaaaaa
Login to View More

Abstract

The invention relates to an electrostatic spinning anti-virus thin layer and an application in the anti-virus field thereof. The characteristics of the electrostatic spinning anti-virus thin layer areas follows: the electrostatic spinning anti-virus thin layer is composed of a linear polymer, cyclodextrin group molecules, an end-capped polymer and metal ions; and the linear polymer passes throughthe hydrophobic portion of the lumen of the cyclodextrin group. The high-efficiency anti-virus thin layer satisfies the following characteristic that the immersion test and oscillation method detection show that the bacteriostatic rate of the thin layer on staphylococcus aureus and Escherichia coli after 18 hours is greater than 99.5%. The high-efficiency anti-virus thin layer can be used for anti-virus and anti-bacterial insoles, medical protective clothing, medical mattresses, bed sheets, protective covers, hole towels, refrigerator linings, and table and chair protective cushions in civil,medical, and military fields.

Description

technical field [0001] The invention relates to an electrospun antiviral thin layer and its application in the antiviral field, in particular to an antiviral and antibacterial mask lining, insole, medical protective clothing, protective cover, Refrigerator liners, protective pads for tables and chairs, and medical mattresses belong to the technical field of health protection. [0002] technical background [0003] Environmental microorganisms are key factors that cause respiratory infections and increase the morbidity and mortality of respiratory diseases. Environmental microorganisms such as bacteria, fungi, actinomycetes, viruses and lower algae are important components of air pollution. Environmental microorganisms will attach to the surface of air aerosol fine particles and stay in the air for a long time with the fine particles. As people breathe, environmental microorganisms will enter the lungs or infected wounds, causing the spread of infectious diseases and causing...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): D01D5/00A41D13/11A41D13/12
CPCD01D5/003D01D5/0084A41D13/1192A41D13/1209D10B2401/13D10B2501/043D10B2503/00D10B2503/062D10B2509/026D10B2509/00
Inventor 童庆松生瑜童君开高峰
Owner FUJIAN NORMAL UNIV
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Patsnap Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Patsnap Eureka Blog
Learn More
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic, Popular Technical Reports.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap|About US| Contact US: help@patsnap.com