Method for preparing nano silicon through three-stage grinding
Patent Information
- Authority / Receiving Office
- CN · China
- Patent Type
- Applications(China)
- Current Assignee / Owner
- MAANSHAN KEDA PURUI ENERGY TECH CO LTD
- Publication Date
- 2020-05-19
Smart Images

Figure 1 
Figure 2 
Figure 3
Abstract
Description
technical field
[0001] The invention belongs to the field of nanometer material preparation, and in particular relates to a method for preparing nanometer silicon by three-stage grinding. Background technique
[0002] Silicon has an ultra-high theoretical specific capacity (4200mAh / g) and a low delithiation potential (<0.5V), but the volume change of silicon can be as high as 300% during charge and discharge, which will cause silicon particles to break and affect the active material and assembly. The connection between the fluids is not conducive to electron transport; on the other hand, the solid electrolyte interfacial film formed between the silicon-based material and the electrolyte gradually thickens, resulting in a sharp decline in the cycle performance of the lithium battery. There are even studies that show that the first coulombic efficiency of micron-sized silicon powder is less than 40%, and the cycle performance is very poor, and the reversible capacity is alm...