Adhesive sheet for temporary fixing, and method for producing semiconductor device by using same

A technology for temporarily fixing and bonding sheets, used in semiconductor devices, semiconductor/solid-state device manufacturing, electrical solid-state devices, etc., and can solve problems such as reduced adhesion

Active Publication Date: 2020-06-02
LG CHEM LTD
View PDF6 Cites 4 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, existing adhesives have problems in that additives in the adhesive, such as photoinitiators, are thermally decomposed during the high-temperature process, or that the reduction in adhesive force during the peeling step is insufficient due to the migration of additives.

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Adhesive sheet for temporary fixing, and method for producing semiconductor device by using same
  • Adhesive sheet for temporary fixing, and method for producing semiconductor device by using same
  • Adhesive sheet for temporary fixing, and method for producing semiconductor device by using same

Examples

Experimental program
Comparison scheme
Effect test

preparation example 1

[0112] A monomer mixture consisting of 75 g of 2-ethylhexyl acrylate (2-EHA), 5 g of 4-benzoylphenyl methacrylate and 20 g of hydroxyethyl acrylate (HEA) was introduced into a reactor equipped with a cooling system , to reflux under nitrogen with easy temperature control. Subsequently, based on 100 g of the monomer mixture, 400 μm of n-DDM as a chain transfer agent (CTA) and 100 g of ethyl acetate (EAc) as a solvent were added thereto, and nitrogen gas was injected to remove oxygen in the reactor at 30 Mix well for 30 minutes or more at ℃. Then, the temperature was raised and kept at 62° C., 300 ppm of V-60 (azobisisobutyronitrile) was introduced as a reaction initiator to initiate the reaction, and then allowed to polymerize for 6 hours to prepare a primary reaction product.

[0113] The primary reaction product was blended with 24 g (90 mol % relative to HEA in the primary reaction product) of 2-methacryloyloxyethyl isocyanate (MOI) and 0.24 g of catalyst (DBTDL: dibutyltin...

preparation example 2

[0116] A monomer mixture consisting of 20 g of ethyl acrylate, 63 g of 2-ethylhexyl acrylate (2-EHA), 2 g of 4-benzoylphenyl acrylate and 15 g of hydroxyethyl acrylate (HEA) was introduced into a cooling system equipped The reactor was refluxed under nitrogen and the temperature was easily controlled. Subsequently, based on 100 g of the monomer mixture, 400 μm of n-DDM (n-dodecylmercaptan) as a chain transfer agent (CTA) and 100 g of ethyl acetate (EAc) as a solvent were added thereto, and nitrogen gas was injected to remove Oxygen in the reactor while mixing thoroughly at 30 °C for 30 min or longer. Then, the temperature was raised and kept at 62° C., 300 ppm of V-60 (azobisisobutyronitrile) was introduced as a reaction initiator to initiate the reaction, and then allowed to polymerize for 6 hours to prepare a primary reaction product.

[0117] The primary reaction product was blended with 15 g (76 mol % relative to HEA in the primary reaction product) of 2-methacryloyloxyet...

preparation example 3

[0120] 100g of the (meth)acrylate binder resin (a-1) of Preparation Example 1, 4g of TDI-based isocyanate curing agent, 3g of bis(2,4,6-trimethylbenzoyl) as photoinitiator )-phenylphosphine oxide and 7 g of ethyl-p-dimethylaminobenzoate as an amine compound were mixed to prepare a composition (A-3) for forming an adhesive layer.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

PropertyMeasurementUnit
glass transition temperatureaaaaaaaaaa
thicknessaaaaaaaaaa
thicknessaaaaaaaaaa
Login to view more

Abstract

The present invention relates to: an adhesive sheet for temporary fixing, having excellent heat resistance so as to enable sufficient adhesive strength to be implemented even if a high-temperature process is carried out during the production of a semiconductor, and sufficient reduction of adhesive strength, caused by radiation curing, to be exhibited in a stripping step; and a method for producinga semiconductor device by using same.

Description

technical field [0001] Cross References to Related Applications [0002] This application is based on and claims priority to Korean Patent Applications No. 10-2018-0035996 and No. 10-2019-0034621 filed on March 28, 2018 and March 26, 2019, respectively, the disclosures of which are incorporated by reference in their entirety Incorporated into this article. [0003] The present invention relates to an adhesive sheet for temporary fixing and a method of manufacturing a semiconductor device using the same. Background technique [0004] In recent years, there is a dominant trend toward smaller, thinner, and higher-capacity electronic devices, and thus demands for high density and high integration of semiconductor packages have become stronger. In order to meet this demand, the size of semiconductor chips has gradually increased while the thickness of the chips has become thinner. [0005] A problem with thin semiconductor chips is that they are difficult to handle during the...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
Patent Type & Authority Applications(China)
IPC IPC(8): C09J7/22C09J133/08C09J133/10C09J7/40H01L21/18
CPCH01L21/6836H01L2221/68381C09J7/22C09J2203/326C09J2433/00C09J2301/416C09J2301/312C09J7/385C09J2467/006C09J2481/006C09J2477/006C09J2471/006C08F220/1808C08F265/06C09J151/003C08F220/20C08F220/301C08F220/36C08F220/1802C09J133/08C09J133/10C09J7/40H01L21/185C09J2301/208C09J2301/124C09J133/24C09J167/02H01L2221/68386
Inventor 金色拉韩智浩李光珠
Owner LG CHEM LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products