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Quantum dot light emitting diode

A quantum dot light-emitting and diode technology, which is applied in the manufacturing of electrical components, electric solid-state devices, semiconductor/solid-state devices, etc. Seriously, improve the effect of carrier transport

Pending Publication Date: 2020-06-05
TCL CORPORATION
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] The purpose of the present invention is to overcome the above-mentioned deficiencies of the prior art, provide a quantum dot light-emitting diode and its preparation method, aiming to solve the problem of "pinhole" phenomenon in the cathode of the existing device, thereby reducing the luminous efficiency and service life of the device. technical problem

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  • Quantum dot light emitting diode

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preparation example Construction

[0032] The embodiment of the present invention also provides a method for preparing a quantum dot light-emitting diode, comprising the following steps:

[0033] S01: Provide a base;

[0034] S02: preparing an ionic liquid material layer on the substrate.

[0035] The preparation method of the quantum dot light-emitting diode provided by the embodiment of the present invention has a simple process and low cost. The ionic liquid material layer is directly prepared on the substrate. The ionic liquid material layer not only has strong conductivity, stable properties, good designability, It has the outstanding advantages of low vapor pressure, high cohesion, green and pollution-free, and has the characteristics of compact structure, thermal stability and good water and oxygen barrier ability. Therefore, different functional layers can be coated on the surface of the substrate, and the prepared ionic liquid can be directly The material layer is used to modify the functional layer, ...

Embodiment 1

[0084] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0085] Firstly, [BMIM]BF4 was dissolved in methanol to prepare a 5 mg / mL ionic liquid solution, and then the device was prepared as follows:

[0086] (1) Spin-coat a layer of PEDOT:PSS hole injection layer on the ITO conductive glass;

[0087] (2) Spin-coat a layer of TFB hole transport layer on the PEDOT:PSS hole injection layer;

[0088] (3) Spin-coat a layer of CdSe / ZnS quantum dot luminescent layer on the TFB hole transport layer;

[0089] (4) Spin-coat one layer of ZnO electron transport layer on the CdSe / ZnS quantum dot luminescent layer;

[0090] (5) Spin-coat the above-mentioned ionic liquid solution on the ZnO electron transport layer with 5000rpm / s to obtain a dense [BMIM]BF4 ionic liquid material layer;

[0091] (6) An Al cathode layer was deposited on the [BMIM]BF4 ionic liquid material layer to obtain a quantum dot light-emitting diode.

Embodiment 2

[0093] A quantum dot light-emitting diode, the preparation process of which is as follows:

[0094] Firstly, [BMIM]BF4 was dissolved in methanol to prepare a 5 mg / mL ionic liquid solution, and then the device was prepared as follows:

[0095] (1) Spin-coat a layer of PEDOT:PSS hole injection layer on the ITO conductive glass;

[0096] (2) Spin-coat a layer of TFB hole transport layer on the PEDOT:PSS hole injection layer;

[0097] (3) Spin-coat a layer of CdSe / ZnS quantum dot luminescent layer on the TFB hole transport layer;

[0098] (4) Spin-coat the above-mentioned ionic liquid solution on the CdSe / ZnS quantum dot luminescent layer with 3000rpm / s to obtain a dense [BMIM]BF4 ionic liquid material layer;

[0099] (5) Spin-coat one layer of ZnO electron transport layer on [BMIM]BF4 ionic liquid material layer;

[0100] (6) Spin-coat the above-mentioned ionic liquid solution on the ZnO electron transport layer at 5000rpm / s, and then heat at 80°C for 30min to obtain a layer o...

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Abstract

The invention belongs to the technical field of display, and particularly relates to a quantum dot light emitting diode. The quantum dot light emitting diode comprises an anode, a cathode and a quantum dot light emitting layer arranged between the anode and the cathode, wherein an electron transport layer is arranged between the quantum dot light emitting layer and the cathode, and a first ionic liquid material layer is arranged on the surface, close to the electron transport layer, of the cathode. The ionic liquid material layer in the device not only improves the light emitting performance of the device, but also improves the designability and prolongs the service life of the device.

Description

technical field [0001] The invention belongs to the field of display technology, and in particular relates to a quantum dot light-emitting diode. Background technique [0002] Quantum dots light-emitting diode (QLED) is an emerging display device whose principle and structure are similar to those of organic light-emitting diodes (OLED): quantum dots and organic / inorganic semiconductors Driven by an external DC electric field, a flat panel display device in which excitons recombine and emit light. Compared with OLED, QLED is characterized by quantum dots prepared by colloidal method as its luminescent material. The unique quantum size effect, macroscopic quantum tunneling effect, quantum size effect and surface effect of quantum dots make them exhibit excellent physical properties, especially excellent optical properties. Compared with organic fluorescent dyes, colloidal quantum dots have the advantages of adjustable spectrum, high luminous intensity, high color purity, and...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/50H01L51/52
CPCH10K50/115H10K50/14H10K50/844
Inventor 梁柱荣曹蔚然钱磊
Owner TCL CORPORATION
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