Antistatic semiconductor UV viscosity-reducing adhesive layer and protective film

A technology of semiconductor and adhesive layer, which is applied in the direction of semiconductor devices, semiconductor/solid-state device manufacturing, electric solid-state devices, etc. It can solve the problems of easy generation of static electricity, pollution of attached objects, and incomplete performance stability, etc., to extend the storage time , to avoid the effect of static electricity

Active Publication Date: 2020-06-26
广东硕成科技股份有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In the domestic market, most of the UV viscosifying adhesives used for wafer cutting and picking process protection are mainly in Japan and Taiwan, China. There are also several domestic UV viscosifying adhesives that are developing and promoting, but their performance is not yet fully stable.
Moreover, the base material of the UV anti-adhesive protective film is prone to static electricity due to friction during use, and its use in the field of electronic parts with high static requirements is limited, such as easy to absorb dust, and then transferred to the attached product The surface, or the electrostatic voltage is too high, resulting in defective parts, etc.
[0004] The current UV anti-adhesive protective film is generally stored for about 3 months, and the small molecules in the adhesive layer will migrate to the surface of the adhesive layer. Although the adhesive force becomes smaller after UV irradiation during later peeling, the small molecules in the adhesive layer Will remain on the surface of the bonded object, causing pollution to the bonded object

Method used

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  • Antistatic semiconductor UV viscosity-reducing adhesive layer and protective film

Examples

Experimental program
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Effect test

preparation example Construction

[0024] The preparation method of the cross-linked acrylic resin of the present invention comprises the following steps: adding di-trimethylolpropane tetraacrylate, methacrylic acid ester, and maleic anhydride in ethyl acetate, and then adding thermal trigger agent, mixed uniformly, and carried out free radical polymerization at 70-80°C to obtain the cross-linked acrylic resin;

[0025] The molar ratio of the two-trimethylolpropane tetraacrylate, methacrylate, and maleic anhydride is 1:22.5:4;

[0026] The content of described ethyl acetate is 35wt% of raw material gross mass;

[0027] The thermal initiator is tert-butyl peroxybenzoate; the content of the tert-butyl peroxybenzoate is 1 wt% of the total mass of raw materials.

[0028] In some preferred embodiments, the polymer with a cross-linked network system also includes a three-dimensional cross-linked network polymer; the raw materials for the preparation of the three-dimensional cross-linked network polymer include linea...

Embodiment 1

[0065] Embodiment 1 provides an antistatic semi-conductor UV viscosifying adhesive layer. In parts by weight, the raw materials for preparing the UV viscous adhesive layer include 40 parts of a polymer with a cross-linked network system, 0.1 part of an antistatic agent, 0.2 parts of photoinitiator, 0.5 parts of dispersant;

[0066] The polymer with a crosslinked network system includes a crosslinked acrylic resin; the preparation method of the crosslinked acrylic resin comprises the steps of: di-trimethylolpropane tetraacrylate, methacrylic acid Add ester and maleic anhydride to ethyl acetate, then add thermal initiator, mix uniformly, and carry out free radical polymerization reaction at 75°C to obtain the cross-linked acrylic resin; the bis-trimethylol The molar ratio of propane tetraacrylate, methacrylate and maleic anhydride is 1:22.5:4; the content of ethyl acetate is 35wt% of the total mass of raw materials; the thermal initiator is benzoic acid peroxide tert-butyl este...

Embodiment 2

[0079] Embodiment 2 provides an antistatic semi-conductor UV viscosifying adhesive layer. In parts by weight, the raw materials for preparing the UV viscous adhesive layer include 60 parts of a polymer with a crosslinked network system, 0.3 parts of an antistatic agent, 1 part of photoinitiator, 2 parts of dispersant;

[0080] The polymer with cross-linked network system is the same as embodiment 1;

[0081] The antistatic agent is a multi-walled carbon nanotube purchased from Jiangsu Xianfeng Nano Material Technology Co., Ltd.;

[0082] Described photoinitiator is with embodiment 1;

[0083] The dispersant is BYK-P104S, purchased from Foshan Qianyou Chemical Co., Ltd.;

[0084] The preparation method of the UV adhesive layer is the same as in Example 1.

[0085] An antistatic semi-conductor UV viscosity-reducing protective film comprises a substrate film, a UV-viscosity-reducing adhesive layer and a release film in sequence;

[0086] The thickness of the UV adhesive layer...

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Abstract

The invention relates to the technical field of semiconductor protective films, in particular to an antistatic semiconductor UV viscosity-reducing adhesive layer and a protective film. The invention provides an antistatic semiconductor UV viscosity-reducing adhesive layer is prepared from the following raw materials, by weight: 40-60 parts of a polymer with a cross-linked network system, 1-5 partsof an antistatic agent, 1.5-8 parts of a photoinitiator and 0.5-2 parts of a dispersing agent. According to the antistatic semiconductor UV viscosity-reducing protective film, the protective film isfree of residual glue after being stored for six months, so that static electricity generated by the UV viscosity-reducing protective film due to the friction effect in the use process is avoided, thepeel strength of the UV viscosity-reducing protective film before UV irradiation can be improved, and the peel strength of the UV viscosity-reducing protective film after UV irradiation can be reduced.

Description

technical field [0001] The invention relates to the technical field of semiconductor protective films, in particular to an antistatic semiconductor UV adhesive-reducing layer and a protective film. Background technique [0002] In the semiconductor manufacturing process, when cutting and polishing semiconductor wafers, in order to reduce the defect density of silicon thin layers, wafer cutting and adhesion-reducing protective films are often used. Anti-adhesive protective film means that the adhesive force is strong when it is used, and the adhesive force is weakened for peeling in the later peeling process. [0003] At present, most of the anti-adhesive protective films on the market are UV anti-adhesive protective films, which means that they have high adhesive force and good adhesion before UV irradiation, and the adhesive force decreases significantly after UV irradiation and is easy to peel off. In the domestic market, most of the UV viscosifying adhesives used for pro...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C09J133/04C09J133/12C09J7/30C09J7/38C09J7/40C09J11/04H01L21/683
CPCC08K2201/011C08K2201/017C09J11/04C09J133/04C09J2203/326C09J7/30C09J7/385C09J7/40H01L21/6836H01L2221/68327C08L33/12C08K3/041C08K3/042
Inventor 柯跃虎诸葛锋宋亦健曾庆明
Owner 广东硕成科技股份有限公司
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