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Copper tungsten carbide diamond composite electrical contact material and preparation method thereof

A technology of tungsten carbide diamond and electric contact materials, which is applied in the direction of contacts, circuits, electric switches, etc., can solve the problems of poor wettability, improve wettability, improve welding resistance and electrical wear resistance, Solve the effect of high porosity

Inactive Publication Date: 2020-07-14
FUDA ALLOY MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0009] The above-mentioned patents all relate to the problems of poor wettability between materials and free floating of additives in molten metal, which are to be solved by the present application

Method used

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  • Copper tungsten carbide diamond composite electrical contact material and preparation method thereof
  • Copper tungsten carbide diamond composite electrical contact material and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0034] (1) Powder mixing: take by weighing 4kg of tungsten carbide powder with an average particle diameter of 0.8 to 1.0 micron, 0.136kg of cobalt powder with an average particle diameter of 1 to 3 microns, and 0.068Kg of diamond powder with an average particle diameter of 1 to 3 microns. The powders were preliminarily mixed, sieved to 200 mesh, and then loaded into a powder mixer for powder mixing, and the mixing time was 4 hours.

[0035] (2) Mechanical grinding: put the powder processed in step (1) into a ball milling tank, add alloy balls, the ball-to-material ratio is 4:1, turn on the cooling system, and carry out mechanical grinding treatment, and the ball milling time is 20 hours. The mixture after ball milling is unloaded, and after the alloy balls are separated, the powder is passed through a 150-mesh sieve, and the agglomerated powder is broken and passed through a 150-mesh sieve again.

[0036] (3) Reduction diffusion: In a reducing atmosphere, the sieved powder tr...

Embodiment 2

[0042] (1) Powder mixing: Weigh 4kg of tungsten carbide powder with an average particle diameter of 1.2 to 1.5 microns, 0.117kg of cobalt powder with an average particle diameter of 1 to 3 microns, and 0.058Kg of diamond powder with an average particle diameter of 1 to 3 microns. The powders are mixed, sieved, and loaded into a powder mixer for powder mixing.

[0043](2) Mechanical grinding: put the powder processed in step (1) into a ball milling tank, add alloy balls, the ratio of ball to material is 4:1, and carry out mechanical grinding treatment, and the ball milling time is 24 hours. The mixed material after ball milling is unloaded, and after the alloy balls are separated, the powder is passed through a 150-mesh sieve.

[0044] (3) Reduction annealing: In a reducing atmosphere, the sieved powder treated in step (2) was kept and sintered at 850°C for 4 hours to reduce the oxide film on the surface of the powder, and then the cooled mixed powder was Crushed and sieved. ...

Embodiment 3

[0050] (1) Powder mixing: take by weighing 4kg of tungsten carbide powder with an average particle diameter of 0.8 to 1.0 micron, 0.10kg of cobalt powder with an average particle diameter of 1 to 3 microns, and 0.007Kg of diamond powder with an average particle diameter of 1 to 3 microns. The powders were preliminarily mixed, sieved to 200 mesh, and then loaded into a powder mixer for powder mixing, and the mixing time was 4 hours.

[0051] (2) Mechanical grinding: put the powder processed in step (1) into a ball milling tank, add alloy balls, the ratio of ball to material is 4:1, turn on the cooling system, and carry out mechanical grinding treatment, and the ball milling time is 16 hours. The mixture after ball milling is unloaded, and after the alloy balls are separated, the powder is passed through a 150-mesh sieve, and the agglomerated powder is broken and passed through a 150-mesh sieve again.

[0052] (3) Reduction and diffusion: In a reducing atmosphere, the sieved pow...

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Abstract

The invention discloses a copper tungsten carbide diamond composite electrical contact material and a preparation method thereof. The copper tungsten carbide diamond composite electrical contact material is prepared from the following components: tungsten carbide powder, diamond powder and cobalt powder, wherein the average particle size of the tungsten carbide powder is 0.5-5[mu]m, and the mass ratio of the tungsten carbide powder is 55-70wt%; the average particle size of the diamond powder is 0.1-10[mu]m, and the mass ratio of the diamond powder is 0.01-2wt%; and the average particle size ofthe cobalt powder is 1-5[mu]m, and the mass ratio of the cobalt powder is 1-4wt%. The preparation of the high-density copper tungsten carbide diamond material by a liquid phase sintering process canbe realized, the problem of high porosity in a contact is solved, and the fusion welding resistance and electrical wear resistance of the contact material are comprehensively improved.

Description

technical field [0001] The invention belongs to the field of manufacturing technology of electric contact materials, and specifically refers to a liquid-phase sintered copper tungsten carbide diamond composite electric contact material and a preparation method thereof. Background technique [0002] Copper tungsten carbide material is a pseudoalloy composed of high melting point, high hardness tungsten carbide and high electrical conductivity and high thermal conductivity copper. It is currently widely used as electrical contact material, resistance welding, electric discharge machining and plasma electrode material. Under large and medium currents, the contact resistance of copper tungsten carbide material will gradually increase with the increase of the number of on and off, and the temperature rise will also gradually increase, resulting in a continuous increase in the risk of welding and arc corrosion of the contacts. By adding high melting point and high hardness diamon...

Claims

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Application Information

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IPC IPC(8): C22C26/00C22C29/08C22C1/10H01H1/021
CPCC22C26/00C22C1/1015C22C1/1036H01H1/021C22C1/1047
Inventor 兰岚宋振阳孔欣赵阿强崔永刚王达武陈松扬
Owner FUDA ALLOY MATERIALS
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