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Preparation method of perovskite thin film and cell added with triiodide and cell

A technology of triiodide and perovskite, which can be used in circuits, photovoltaic power generation, electrical components, etc., and can solve problems such as crystal quality degradation

Pending Publication Date: 2020-07-17
HANGZHOU MICROQUANTA SEMICON CO LTD
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0006] However, the current method of doping triiodide ions is only suitable for the preparation of perovskite layers by the two-step solution method, and the IPA solution of simple iodine needs to be stirred at 80°C for 7 days to fully form triiodide ions, and the formed by-products such as acetone may also will lead to a decrease in crystal quality

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  • Preparation method of perovskite thin film and cell added with triiodide and cell
  • Preparation method of perovskite thin film and cell added with triiodide and cell

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[0065] The invention discloses a method for preparing a perovskite film added with triiodide, which is referred to as a one-step solution method for short, and includes the following steps:

[0066] Step 1. Combine the two precursors BX of perovskite 2 And AX and triiodide MI 3 They are added to an organic solvent and mixed to obtain a triiodide-containing perovskite precursor solution.

[0067] Step 2: Apply the perovskite precursor solution prepared in step 1 to the surface of the substrate on which the transmission layer has been prepared by any one of spin coating, knife coating, slit continuous coating, and spray coating to obtain triiodine-containing Ionic metal halide perovskite film layer.

[0068] Step three: treating and annealing the metal halide perovskite film layer of step two with an anti-solvent to obtain a uniform and flat perovskite film containing triiodide ions. among them,

[0069] B is at least one of +2 metal or non-metal ions or groups, including lead, tin, tu...

Embodiment 1

[0094] The first method of the present invention for preparing a battery containing a perovskite film added with triiodide as described above-a one-step solution method, includes the following steps:

[0095] (11) The ITO transparent conductive glass was ultrasonically cleaned with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then used N 2 After drying, treat with UV O-zone for 10 minutes.

[0096] (12) Preparation of TiO on ITO 2 The electron transport layer is sprayed with a thickness of 20nm.

[0097] (13) One-step preparation of perovskite film doped with triiodide ion: 461 mg of PbI 2 (1mmol), 172mg formamidine hydroiodide (1mmol), 5.14mg CsI 3 (0.01mmol) was dissolved in 1mL of DMF solution, and 96uL of anhydrous N-methylpyrrolidone was added, heated and stirred at 60°C for 4h, after the mixing was complete, the perovskite film layer doped with triiodide ions was prepared by knife coating method. Chlorobenzene was quickly and uniformly coated on the ...

Embodiment 2

[0101] The second method of the present invention for preparing a battery containing a perovskite film added with triiodide as described above-a two-step solution method, includes the following steps:

[0102] (21) The ITO transparent conductive glass was ultrasonically cleaned with detergent, deionized water, acetone, and isopropanol for 30 minutes, and then used N 2 After drying, treat with UV O-zone for 10 minutes.

[0103] (22) Preparation of SnO on ITO 2 The electron transport layer adopts a slit coating method with a thickness of 30nm.

[0104] (23) Two-step method to prepare perovskite film doped with triiodide ion: add 414.9mg of PbI 2 (0.9mmol), 36.7mg of PbBr 2 (0.1mmol), 4.66mg of RbI 3 (0.01mmol) was dissolved in 1mL DMF solution, and 96uL of anhydrous N-methylpyrrolidone was added, heated and stirred at 55℃ for 4h, after the mixing was completed, the perovskite precursor doped with triiodide ions was prepared by slit coating method Thin film layer, thickness 250nm.

[010...

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Abstract

The invention relates to a preparation method of three perovskite thin films added with triiodide. The perovskite thin film is doped with triiodide ions, the triiodide ions with a proper concentrationare doped in the shorter preparation time, other impurities are not introduced to participate in an intramolecular exchange process of perovskite, the internal defects of the perovskite material arepassivated, and the charge-carrier lifetime in perovskite is improved, so that the performance and stability of the perovskite material are improved, and the industrial production is promoted. The invention also discloses a preparation method of a perovskite cell containing the perovskite thin film and the prepared perovskite cell. According to the method, the triiodide ions can be rapidly fused in the perovskite precursor solution and are subjected to auxiliary crystallization, and the perovskite defects are passivated, so that the service life of charge carriers is prolonged, the space carrier dynamics is optimized, and more excellent photovoltaic device performance is realized.

Description

Technical field [0001] The invention belongs to the technical field of perovskite battery preparation, and particularly relates to a method for preparing a triiodide-added perovskite film and a battery and the battery. Background technique [0002] In recent years, perovskite solar cells have received widespread attention. Such perovskite solar cells use perovskite materials as the light absorption layer. Perovskite is ABX 3 With a cubic octahedral structure, the thin-film solar cell prepared by this material has simple process, low production cost, stability and high conversion rate. Since its development in 2009, the laboratory conversion efficiency of perovskite photovoltaic cells has increased from 3.81% to 25.2%, showing an extremely rapid increase. Although the conversion efficiency of perovskite cells has been continuously refreshed, the shortcomings of the poor stability of the light absorption layer have added some uncertainty to its industrialization prospects. [0003]...

Claims

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Application Information

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IPC IPC(8): H01L51/48H01L51/42
CPCH10K71/12H10K30/152H10K30/151Y02E10/549Y02P70/50
Inventor 不公告发明人
Owner HANGZHOU MICROQUANTA SEMICON CO LTD
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