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Aluminum nitride template and preparation method thereof

An aluminum nitride and template technology, applied in semiconductor/solid-state device manufacturing, electrical components, circuits, etc., can solve problems such as wafer cracking and high defect density, and achieve the effect of reducing defect density and realizing dislocation density.

Active Publication Date: 2020-07-31
BEIJING UNIV OF CHEM TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] The main purpose of the present invention is to provide an aluminum nitride template and its preparation method to solve the problem caused by mismatch in the high temperature epitaxial growth of AlN material on a sapphire substrate The technical problems of high defect density and wafer cracking, and obtain high-quality 2-50μm AlN single crystal thin film or thick film template, and then overcome the deficiencies in the existing technology

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  • Aluminum nitride template and preparation method thereof
  • Aluminum nitride template and preparation method thereof
  • Aluminum nitride template and preparation method thereof

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preparation example Construction

[0034] An embodiment of the present invention provides a method for preparing an aluminum nitride template, which includes:

[0035] placing the substrate in the reaction chamber, and preparing an AlN or BN buffer layer on the substrate;

[0036] An AlN epitaxial layer is prepared on the AlN or BN buffer layer, and at least a BAlN insertion layer is prepared and formed in the AlN epitaxial layer, thereby forming the aluminum nitride template.

[0037] In some more specific embodiments, the preparation method includes: introducing a nitrogen source and an aluminum source into the reaction chamber, and growing an AlN buffer layer on the substrate at 1400-1500°C; or, injecting the A nitrogen source and a boron source are fed into the reaction chamber, and a BN buffer layer is grown on the substrate under the condition of 1400-1500°C.

[0038] In some more specific embodiments, the preparation method includes: introducing a nitrogen source and an aluminum source into the reaction...

Embodiment 1

[0058] A method for preparing an aluminum nitride template may comprise the steps of:

[0059] 1) Place the sapphire or SiC substrate in a CVD (Chemical Vapor Deposition) or HVPE (Hydride Vapor Phase Epitaxy) reaction chamber, and raise the temperature in the reaction chamber to 1400-1600°C, and then inject hydrogen into the reaction chamber Cleaning sapphire or SiC substrates;

[0060] 2) Feed a nitrogen source and an aluminum source into the reaction chamber, and grow an AlN buffer layer with a thickness of 500-2000nm at a temperature of 1400-1500°C;

[0061] 3) After the growth of the AlN buffer layer is completed, stop feeding the aluminum source, and adjust the temperature in the reaction chamber to 1400-1550°C;

[0062] 4) Feed an aluminum source into the reaction chamber at 1400-1550° C. to grow an AlN epitaxial layer in situ on the AlN buffer layer;

[0063] 5) Maintain the growth conditions of the AlN epitaxial layer (1400-1550 ° C), feed the boron source into the r...

Embodiment 2

[0067] A method for preparing an aluminum nitride template may also include the following steps:

[0068] 1) Place the sapphire or SiC substrate in a CVD (Chemical Vapor Deposition) or HVPE (Hydride Vapor Phase Epitaxy) reaction chamber, and raise the temperature in the reaction chamber to 1400-1600°C, and then inject hydrogen into the reaction chamber Cleaning sapphire or SiC substrates;

[0069] 2) Feed a nitrogen source and a boron source into the reaction chamber, and grow a BN buffer layer with a thickness of 500-2000nm at a temperature of 1400-1500°C;

[0070] 3) After the growth of the BN buffer layer is completed, the boron source is stopped, and the temperature in the reaction chamber is adjusted to 1400-1550° C.;

[0071] 4) Feed an aluminum source into the reaction chamber at 1400-1550° C. to grow an AlN epitaxial layer in situ on the BN buffer layer;

[0072] 5) Maintain the growth conditions of the AlN epitaxial layer (1400-1550 ° C), feed the boron source into ...

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Abstract

The invention discloses an aluminum nitride template and a preparation method thereof. The preparation method of the aluminum nitride template comprises the following steps: placing a substrate in a reaction chamber, and preparing an AlN or BN buffer layer on the substrate; and preparing an AlN epitaxial layer on the AlN or BN buffer layer, and preparing and forming at least a BAlN insertion layerin the AlN epitaxial layer so as to form the aluminum nitride template. According to the aluminum nitride template and the preparation method thereof provided by the embodiment of the invention, theAlN or BN buffer layer is deposited at a high temperature, and an antiphase domain in AlN or BN in initial growth can be adopted to realize reduction of dislocation density and relaxation of stress; amethod of intermittently supplying a boron source is adopted in epitaxial growth, stress accumulated in the epitaxial growth process is further released and the defect density is reduced by utilizingthe BAlN insertion layer, and the growth of a high-quality AlN single crystal thin film or thick film is ensured; and the band gap of BN is close to the band gap of AlN, so that the transmittance ofultraviolet light is not influenced.

Description

technical field [0001] The invention relates to a method for preparing an aluminum nitride template, in particular to an aluminum nitride template and a preparation method thereof, belonging to the technical field of semiconductors. Background technique [0002] As a third-generation semiconductor material, aluminum nitride has broad application prospects in optoelectronics and electronic devices. It has good physical and chemical properties, such as good dielectric properties, high breakdown field strength, high thermal conductivity, good stability and fast drift rate, etc. And because its band gap is about 6.2eV, it is one of the most likely materials for possible deep ultraviolet luminescence. It is hoped to overcome a series of problems existing in deep ultraviolet luminescence. Compared with the existing mercury lamps, it is environmentally friendly and workable. Advantages such as lower voltage and power consumption. In addition, AlN-based compounds are also importan...

Claims

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Application Information

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IPC IPC(8): H01L21/02
CPCH01L21/02458H01L21/0254H01L21/0257
Inventor 张纪才李金峰
Owner BEIJING UNIV OF CHEM TECH
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