Monocrystalline silicon wafer, monocrystalline silicon rod, preparation method of monocrystalline silicon rod, solar cell and assembly

Abstract

The invention provides a monocrystalline silicon wafer. The monocrystalline silicon wafer comprises a silicon wafer body, the silicon wafer body comprises a plurality of straight wall parts and a plurality of chamfer parts, the straight wall parts and the chamfering parts are sequentially and alternately connected end to end, the chamfering parts are linear, and the included angle between a straight line formed by connecting the end point of any end of each chamfering part and the center point of the silicon wafer body and the crystal direction of the silicon wafer body (110) is not smaller than 0.35 degree and not larger than 3.2 degrees. The monocrystalline silicon wafer has the beneficial effects that the monocrystalline silicon wafers are provided with the chamfering parts, and the chamfering parts are linear, so that the poor positioning effect of the monocrystalline silicon wafers during downstream battery electrode printing and battery assembly assembling is avoided, and the dislocation phenomenon occurring during monocrystalline silicon wafer splicing is avoided; and meanwhile, in the preparation process of the monocrystalline silicon rod, the polishing mode that the monocrystalline silicon rod does not rotate and the polishing grinding wheel rotates is adopted, so that the consistency of the corner angle polishing radian of the monocrystalline silicon rod is good.

Description

technical field [0001] The invention belongs to the technical field of silicon chip production, and in particular relates to a single crystal silicon chip, a single crystal silicon rod and a preparation method thereof, a solar battery and components. Background technique [0002] At present, the shape of the four corners of silicon wafers for solar energy is generally arc corners, such as figure 1 As shown, the corners of this shape can effectively reduce stress concentration and reduce the fragmentation of silicon wafers during transportation and processing. The accuracy and positioning requirements are getting higher and higher. This kind of arc-shaped structure is difficult to meet the positioning requirements of downstream battery electrode printing and battery assembly assembly, that is, the positioning effect of this kind of arc-shaped structure is poor when positioning through arc angles, for example , When splicing two arc-shaped single crystal silicon wafers on the...

AI Technical Summary

Problems solved by technology

[0002] At present, the shape of the four corners of silicon wafers for solar energy is generally arc corners, such as figure 1 As shown, the corners of this shape can effectively reduce stress concentration and reduce the fragmentation of silicon wafers during transportation and processing. The accuracy and positioning requirements are getting higher and higher. This kind of arc-shaped structure is difficult to meet the positioning requirements of downstream battery electrode printing and battery assembly assembly, that is, the positioning effect of this kind of arc-shaped structure is poor when positioning through arc angles, for example , when splicing two arc-shaped single crystal silicon wafers on the same plane, it is easy to dislocate

[0003] In addition, there are following defects in the process from single crystal silicon rods to single crystal silicon wafers with arc-shaped structure: the grinding process in the prior art is as follows figure 2 As shown, among them, v1 is the feeding direction of the silicon rod, v2 is the rotation direction of the single crystal silicon rod, and v3 is the rotation direction of the grinding wheel. When grinding, the single crystal silicon rod and the grinding wheel rotate simultaneously, so that the four single crystal silicon rods The consistency of the edge grinding arc is difficult to control. When the arc angle gradually decreases, due to the problem of tool accuracy in the processing process, there will be inconsistencies in the angles of the entry and exit of the knife, resulting in the asymmetry of the arc angle.

Generally, there is more wear at the entry point, and less wear at the exit point, that is, some edges and corners are over-polished, and some corners are not polished, which affects the yield of monocrystalline silicon wafers.

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