Diamond-reinforced silicon carbide substrate, preparation method thereof and electronic product
A diamond reinforced, silicon carbide substrate technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of limited size and low density
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[0025] see figure 1 , a method for preparing a diamond-reinforced silicon carbide substrate in one embodiment, comprising the following steps:
[0026] Step S110: performing wet ball milling on diamond, graphite, dispersant, binder, plasticizer and solvent to obtain cast slurry.
[0027] Wherein, the dispersant is selected from one of triethyl phosphate and castor oil. The dispersant can uniformly disperse each raw material in the solvent.
[0028] The binder is polyvinyl butyral (PVB). The binder is capable of binding the raw materials together.
[0029] The plasticizer is dioctyl phthalate. Adding a binder and a plasticizer to the raw material can increase the strength of the casting billet, improve the toughness and ductility of the casting billet, so as to facilitate separation from the substrate material.
[0030] The solvent is one of isopropanol / toluene, ethanol / ethyl acetate, ethanol / methyl ethyl ketone, trichloroethylene / methyl ethyl ketone and ethanol / water. It...
Embodiment 1
[0058] The preparation process of the diamond-reinforced silicon carbide substrate of this embodiment is as follows:
[0059] (1) Add diamond, graphite, dispersant (triethyl phosphate) and solvent (ethanol and ethyl acetate azeotropic liquid) in the polytetrafluoroethylene ball mill jar according to the ratio of 50g, 5g, 3.3g and 21.7g, and ball mill After 6 hours, 6.5 g of binder (PVB) and 6.5 g of plasticizer (dioctyl phthalate) were added thereto to continue ball milling for 6 hours, and finally a casting slurry with a viscosity of about 8000 mPaS was obtained.
[0060] (2) The casting slurry prepared in step (1) was subjected to vacuum defoaming for 30 minutes under a negative pressure environment of -87.5KPa, and then filtered.
[0061] (3) Tape cast the cast slurry processed in step (2) with a tape casting machine, control the height of the scraper to be 1.3mm, and the casting speed to be 0.02m / min, the first, second and third drying Zone temperatures were set to 40° C....
Embodiment 2
[0067] The preparation process of the diamond-reinforced silicon carbide substrate of this embodiment is as follows:
[0068] (1) Add diamond, graphite, dispersant (triethyl phosphate) and solvent (ethanol and ethyl acetate azeotropic liquid) in the polytetrafluoroethylene ball mill jar according to the ratio of 50g, 10g, 3.3g and 21.7g, and ball mill After 6 hours, 6.5 g of binder (PVB) and 6.5 g of plasticizer (dioctyl phthalate) were added thereto to continue ball milling for 6 hours, and finally a casting slurry with a viscosity of about 8210 mPaS was obtained.
[0069] (2) The casting slurry prepared in step (1) was subjected to vacuum defoaming for 30 minutes under a negative pressure environment of -87.5KPa, and then filtered.
[0070] (3) Tape cast the cast slurry processed in step (2) with a tape casting machine, control the height of the scraper to be 1.3mm, and the casting speed to be 0.02m / min, the first, second and third drying Zone temperatures were set at 40°C,...
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