circuit board
A circuit substrate and dielectric technology, applied in the direction of circuit substrate materials, printed circuits, printed circuit components, etc., can solve the problems of circuit substrate signal transmission line performance differences, increase signal transmission heat loss, and circuit substrates are prone to deformation, etc., to achieve The effect of stable dielectric constant, low dielectric loss, and stable dielectric loss
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Embodiment 1
[0032] Add 10 parts of absolute ethanol to 100 parts of pure water, slowly add 0.1 part of KH550 coupling agent dropwise, and stir at high speed for 1 hour to prepare a clear aqueous solution. Add 25 parts of silica (D 50 1 μm) and 25 parts of zinc oxide whiskers (2 μm in diameter, 8:1 in length-diameter ratio), stir at high speed for 1 hour to form a uniform mixture, bake the mixture in an oven at 110 °C for 24 hours, crush and sieve to obtain Modified silica and zinc oxide whiskers.
[0033] Add 50 parts of polytetrafluoroethylene powder (D 50 1.5μm) and 10 parts of auxiliary oil, mixed for 0.5h. Add the modified silica and zinc oxide whiskers into the mill in three batches, and mix for 0.5h each time. The dielectric layer is obtained by pressure cold pressing. Finally, copper foil is covered on both sides of the dielectric layer, and the circuit substrate is obtained by pressing with a high temperature press.
Embodiment 2
[0035] Add 10 parts of absolute ethanol to 100 parts of pure water, slowly add 0.1 part of KH550 coupling agent dropwise, and stir at high speed for 1 hour to prepare a clear aqueous solution. Add 20 parts of silica (D 50 1 μm) and 25 parts of alumina whiskers (3 μm in diameter, 10:1 aspect ratio), stir at high speed for 1 hour to form a uniform mixture, bake the mixture in an oven at 110 °C for 24 hours, crush and sieve to obtain Modified silica and alumina whiskers.
[0036] Add 75 parts of polytetrafluoroethylene powder (D 50 2.5μm) and 10 parts of auxiliary oil, mixed for 0.5h. Add the modified silica and alumina whiskers into the mill in 3 times, and mix for 0.5h each time. The dielectric layer is obtained by pressure cold pressing. Finally, copper foil is covered on both sides of the dielectric layer, and the circuit substrate is obtained by pressing with a high temperature press.
Embodiment 3
[0038] Add 10 parts of absolute ethanol to 100 parts of pure water, slowly add 0.1 part of KH550 coupling agent dropwise, and stir at high speed for 1 hour to prepare a clear aqueous solution. Add 15 parts of silica (D50 0.5 μm) and 25 parts of boron nitride whiskers (3 μm in diameter, 15:1 in length-diameter ratio), stir at high speed for 1 hour to form a uniform mixture, bake the mixture in a 110°C oven for 24 hours, crush and pass through Sieve to obtain modified silica and boron nitride whiskers.
[0039] Add 80 parts of polytetrafluoroethylene powder (D 50 2 μm) and 10 parts of auxiliary oil, mixed for 0.5h. Add the modified silica and boron nitride whiskers into the mill in 3 times, and mix for 0.5h each time. pressure cold pressing to obtain the dielectric layer. Finally, copper foil is covered on both sides of the dielectric layer, and the circuit substrate is obtained by pressing with a high temperature press.
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