Method for preparing gallium arsenide polycrystal by recycling gallium arsenide waste

A waste recycling and gallium arsenide technology, applied in chemical instruments and methods, polycrystalline material growth, crystal growth, etc., can solve the problems of high impurities in single crystal tailings, waste of gallium arsenide, environmental pollution, etc., and achieve high productivity High, improved purity, reduced methanol demolding step effect

Inactive Publication Date: 2020-08-25
FIRST SEMICON MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Due to the high level of impurities in the single crystal tailings during these processes, there are boron oxide, crucible residues, oil stains, oxides and other impurities on the surface, and the pollution is serious, which makes it difficult to reuse unqualified waste.
According to the existing process method, this part of the waste cannot be rationally utilized, resulting in a serious waste of gallium arsenide, and long-term storage will cause environmental pollution

Method used

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  • Method for preparing gallium arsenide polycrystal by recycling gallium arsenide waste
  • Method for preparing gallium arsenide polycrystal by recycling gallium arsenide waste
  • Method for preparing gallium arsenide polycrystal by recycling gallium arsenide waste

Examples

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Embodiment 1

[0033] A method for preparing gallium arsenide polycrystalline by recycling gallium arsenide waste, said method comprising the following steps:

[0034] (1) Grind the gallium arsenide waste with 400-mesh sandpaper to remove the crucible residue and boron oxide pollution on the surface of the gallium arsenide waste, and then soak it in absolute ethanol to remove the boron oxide and oily substances that cannot be polished off, and soak The time is 30 minutes;

[0035] (2) Clean the gallium arsenide waste with a mixed solution of nitric acid, hydrofluoric acid and water to remove the silicon-free oxide layer of the gallium arsenide waste. The volume ratio of nitric acid, hydrofluoric acid and water is 9:1:1, wherein , the massfraction of nitric acid is 55.6%, and the massfraction of hydrofluoric acid is 4.5%;

[0036] (3) Ultrasonic shock washing, and then drying, the shock washing time is 1h, the drying time is 4h, and the drying temperature is 60°C;

[0037] (4) Put 4Kg of dr...

Embodiment 2

[0041] A method for preparing gallium arsenide polycrystalline by recycling gallium arsenide waste, said method comprising the following steps:

[0042](1) Grind the gallium arsenide waste with 600-mesh sandpaper to remove the crucible residue, boron oxide and other pollution on the surface of the gallium arsenide waste, then soak it in absolute ethanol to remove the boron oxide and oily substances that cannot be polished off, and soak The time is 40 minutes;

[0043] (2) Clean the gallium arsenide waste with a mixed solution of concentrated hydrochloric acid and concentrated nitric acid to remove the silicon-free oxide layer of the gallium arsenide waste. The volume ratio of concentrated hydrochloric acid and concentrated nitric acid is 3:1, wherein the mass fraction of concentrated hydrochloric acid The mass fraction of concentrated nitric acid is 68%;

[0044] (3) Ultrasonic shock washing, and then drying, the shock washing time is 2 hours, the drying time is 3 hours, and ...

Embodiment 3

[0049] A method for preparing gallium arsenide polycrystalline by recycling gallium arsenide waste, said method comprising the following steps:

[0050] (1) Grind the gallium arsenide waste with 800 mesh sandpaper to remove the crucible residue, boron oxide and other pollution on the surface of the gallium arsenide waste, and then soak it in methanol to remove the boron oxide and oily substances that cannot be polished off. The soaking time is 60min;

[0051] (2) Clean the gallium arsenide waste with a mixed solution of nitric acid, hydrofluoric acid and water to remove the silicon-free oxide layer of the gallium arsenide waste. The volume ratio of nitric acid, hydrofluoric acid and water is 3:1:1, wherein , the massfraction of nitric acid is 40.8%, and the massfraction of hydrofluoric acid is 9.8%;

[0052] (3) Ultrasonic shock washing, and then drying, the shock washing time is 3 hours, the drying time is 2 hours, and the drying temperature is 80°C;

[0053] (4) Put 15Kg o...

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Abstract

The invention relates to a method for preparing gallium arsenide polycrystal by recycling gallium arsenide waste. The method comprises the following steps: subjecting the gallium arsenide waste to grinding, soaking and cleaning; then putting the gallium arsenide waste into a first PBN crucible; putting the first PBN crucible into the upper portion of a stepped quartz tube, and putting a second PBNcrucible containing arsenic into the lower portion of the stepped quartz tube; vacuumizing the stepped quartz tube, carrying out sealed welding, putting the welded stepped quartz tube into a VGF single crystal furnace, heating to melt the material, and synthesizing the gallium arsenide polycrystal by using a VGF method. The gallium arsenide polycrystal prepared by the method is cylindrical, the diameter of the gallium arsenide polycrystal is 50-106 mm, and the length of the gallium arsenide polycrystal is 300-400mm. According to the preparation method, impurities can be effectively removed, and the purity is improved; meanwhile, the stepped quartz tube is used, so that the gallium arsenide waste can be supported, the use amount of the gallium arsenide waste can be increased, the maximum weight of the synthesized gallium arsenide polycrystal can reach 14Kg, the yield is up to 95% or above, and the use rate and the production efficiency can be improved.

Description

technical field [0001] The invention relates to a method for preparing gallium arsenide polycrystals by recycling gallium arsenide waste materials, which belongs to the technical field of semiconductor materials. Background technique [0002] At present, during the preparation process of gallium arsenide substrate materials, such as ingot processing, slicing, edging, grinding and other processing processes, gallium arsenide polycrystalline tailings, single crystal tailings, seed crystal waste, waste Wafer etc. During these processes, the impurities in the single crystal tailings are too high, and there are boron oxide, crucible residues, oil, oxides and other impurities on the surface, and the pollution is serious, which makes it difficult to reuse unqualified waste. According to the existing process, this part of the waste cannot be rationally utilized, resulting in a serious waste of gallium arsenide, and long-term storage will cause environmental pollution. [0003] The...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B28/06C30B29/42
CPCC30B28/06C30B29/42
Inventor 王金灵周铁军严卫东马金峰
Owner FIRST SEMICON MATERIALS
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