Oxygen-doped monolayer transition metal chalcogenide, preparation method and application thereof
A transition metal chalcogenide, oxygen doping technology, applied in chemical instruments and methods, from chemical reactive gases, single crystal growth, etc. problem, to achieve the effect of simple process and easy large-scale production
- Summary
- Abstract
- Description
- Claims
- Application Information
AI Technical Summary
Problems solved by technology
Method used
Image
Examples
Embodiment 1
[0038] a) Soak the p-type silica substrate with a thickness of 300nm in the order of acetone, isopropanol and deionized water for 15 minutes respectively, and then dry it with an argon gun for later use;
[0039] b) Mix 70mg of tungsten trioxide, 10mg of ferric oxide and 30mg of sodium chloride, and continue grinding to obtain a uniform powder as a reaction precursor;
[0040] c) Put the sulfur powder and the above-mentioned reaction precursors in corundum boats and place them in a dual-temperature zone tube furnace, the sulfur powder is located upstream of the air flow, the reaction precursor is located downstream of the air flow, and the silicon wafer is covered with the smooth side facing down. on the quartz boat;
[0041] d) Put 60 sccm of argon gas and hydrogen gas mixture (ratio 5:1) into the tube, after 30 minutes, make the positions of sulfur powder and precursor powder reach 200°C and 850°C respectively, stop heating after 5 minutes of reaction, and continue to be in ...
Embodiment 2
[0048] The mass of ferric oxide in step b) is 5 mg, and the rest is the same as that in Example 1 to prepare an oxygen-doped single-layer tungsten disulfide single crystal.
Embodiment 3
[0050] The mass of ferric oxide in step b) is 15 mg, and the rest is the same as that in Example 1 to prepare an oxygen-doped single-layer tungsten disulfide single crystal.
PUM
| Property | Measurement | Unit |
|---|---|---|
| thickness | aaaaa | aaaaa |
Abstract
Description
Claims
Application Information
Login to View More