Additive for chain type texturing of monocrystalline silicon wafers, and application thereof

A single crystal silicon wafer and additive technology, applied in the direction of single crystal growth, single crystal growth, crystal growth, etc., can solve the problems of elongated length of texturing machine, increased reflectivity of silicon wafer, weakened texturing effect, etc. To achieve good conversion efficiency, increase production capacity, and improve the appearance of texturing

Active Publication Date: 2020-08-28
CHANGZHOU SHICHUANG ENERGY CO LTD
View PDF7 Cites 3 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

However, the most restrictive condition for chain texturing is that all silicon wafers are placed horizontally, the length of the texturing machine needs to be elongated, and the floor space is relatively large.
Therefore, it is necessary to reduce the texturing time and make the monocrystalline silicon wafers finish texturing in a

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Additive for chain type texturing of monocrystalline silicon wafers, and application thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Mix 1 part by mass of polyethyleneimine 1800, 5 parts by mass of fucoidan, 0.2 part by mass of polyacrylamide (molecular weight: 8 million), 0.5 part by mass of polyetheramine D230, and 93.3 parts by mass of deionized water to prepare the additive solution; then add additives, potassium hydroxide and deionized water sequentially according to the mass ratio of 1:4:100, stir evenly to make texturing liquid; put monocrystalline silicon wafers flat into the chain texturing equipment, and use the prepared The texturing liquid is used for chain-type texturing of monocrystalline silicon wafers, the texturing temperature is 90°C, and the reaction time is 3.5 minutes. The average reflectance of the textured sheet was measured to be 11.24 after the texturing was completed.

[0026] The suede surface appearance of the gained suede sheet of embodiment 1 is as attached figure 1 As shown in the figure, the size of the textured pyramids is small, the density of the piles is high, and...

Embodiment 2

[0028] Mix and stir 1 part by mass of polyethyleneimine 1800, 10 parts by mass of fucoidan, 0.2 part by mass of polyacrylamide (molecular weight: 8 million), 0.5 part by mass of polyetheramine D230, and 88.3 parts by mass of deionized water to make an additive solution; then according to the mass ratio of 1:4:100, add additives, potassium hydroxide and deionized water in sequence and stir evenly to make a texturing solution; put the monocrystalline silicon wafer into the chain texturing equipment, and use the prepared The texturing solution is used for chain texturing of monocrystalline silicon wafers, the texturing temperature is 90°C, and the reaction time is 3.5 minutes. The average reflectance of the textured sheet was measured to be 11.63 after the texture was finished.

Embodiment 3

[0030] 0.5 parts by mass of polyethyleneimine 1800, 0.5 parts by mass of polyethyleneimine 70000, 5 parts by mass of fucoidan, 0.2 parts by mass of polyacrylamide (molecular weight 8 million), 0.5 parts by mass of polyetheramine D230, 93.3 parts by mass Mix and stir deionized water evenly to make an additive solution; then add additives, potassium hydroxide and deionized water in sequence according to the mass ratio of 1:4:100, stir evenly to make a texturing solution; put the monocrystalline silicon wafer flat into the chain In the type texturing equipment, the prepared texturing liquid is used for chain texturing of monocrystalline silicon wafers, the texturing temperature is 90°C, and the reaction time is 3.5 minutes. After the texturing was completed, the average reflectance of the texturized sheet was measured to be 11.30.

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

PUM

No PUM Login to view more

Abstract

The invention discloses an additive for chain type texturing of monocrystalline silicon wafers. The additive comprises, by mass, 0.2-2.0% of polyethyleneimine, 0.5-10% of fucosan, 0.1-0.5% of polyacrylamide, 0.1-2.0% of polyether, amine and the balance of water. The additive disclosed by the invention is added into a texturing liquid for chain texturing of monocrystalline silicon wafers, so that the texturing time of chain texturing can be shortened to 3min, the productivity can be improved, the reflectivity of textured wafers can be kept at 11-12% and is basically equivalent to that of textured wafers obtained by groove texturing, and silicon wafers have better conversion efficiency.

Description

technical field [0001] The invention relates to the field of photovoltaics, in particular to an additive for chain-type texturing of monocrystalline silicon wafers and an application thereof. Background technique [0002] As the cleanest energy on the earth, solar energy has always been hoped to be directly utilized to the greatest extent. Solar cell, a device that collects solar energy and converts it directly into electrical energy, has gradually become the protagonist of the new energy industry since it was invented by people. Among them, crystalline silicon solar cells are currently being used in large-scale industrial production due to their excellent comprehensive performance. In recent years, due to the rapid development of monocrystalline silicon rod and slicing technology in the industry, the production cost of monocrystalline silicon wafers has dropped rapidly, and monocrystalline silicon cells are gradually reducing the market share of polycrystalline silicon cel...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to view more

Application Information

Patent Timeline
no application Login to view more
IPC IPC(8): C30B33/10C30B29/06
CPCC30B29/06C30B33/10
Inventor 周树伟张丽娟陈培良贺婷婷
Owner CHANGZHOU SHICHUANG ENERGY CO LTD
Who we serve
  • R&D Engineer
  • R&D Manager
  • IP Professional
Why Eureka
  • Industry Leading Data Capabilities
  • Powerful AI technology
  • Patent DNA Extraction
Social media
Try Eureka
PatSnap group products

Browse by: Latest US Patents, China's latest patents, Technical Efficacy Thesaurus, Application Domain, Technology Topic.

© 2024 PatSnap. All rights reserved.Legal|Privacy policy|Modern Slavery Act Transparency Statement|Sitemap