An etching solution system and an etching method for an aluminum nitride substrate
An etching solution and system technology, used in chemical instruments and methods, surface etching compositions, semiconductor/solid-state device manufacturing, etc., can solve the problems of few etching methods and low practicability, and achieve strong etching ability, high Selectivity and excellent etching quality
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Embodiment 1
[0036] The preparation of embodiment 1 etching solution system
[0037] The formula of the first etching solution is shown in Table 1 below.
[0038] Table 1 The mass percentage of each component of the first etching solution
[0039]
[0040] The configuration raw materials of the first etching solution:
[0041] Ammonia water selects the ammonia water solution of 5%-15% mass fraction;
[0042] The strong oxidant is configured with 20%-40% mass fraction of hydrogen peroxide solution or potassium permanganate solution / potassium permanganate that achieves the same effect;
[0043] The complexing agent is an amino hydroxy acid salt compound, including one or more of sodium ammonium triacetate, ethylenediaminetetraacetate, and diethylenetriaminepentacarboxylate, and a complexing agent with a mass fraction > 95% is selected. agent.
[0044] The first etching solution configuration steps are as follows:
[0045] Add pure water to the glass container; then add the formula am...
Embodiment 2
[0056] Embodiment 2 Etching method of aluminum nitride ceramic substrate
[0057] The structure of the etched aluminum nitride ceramic substrate is as follows figure 1 As shown, a solder bonding layer 2 and a copper foil 3 are formed on the aluminum nitride substrate 1 in sequence. The solder bonding layer 2 and the copper foil 3 have a solder bonding layer etching area 20 and a copper foil etching area 30 that need to be removed by etching. like figure 2 As shown, the solder bonding layer 2 includes a copper-silver eutectic layer 21, a nitrogen-titanium reaction layer 22 and an aluminum-titanium intermetallic compound 23, and the corresponding etching regions are 201, 202 and 203, respectively.
[0058] The etching process of aluminum nitride ceramic substrate is as follows image 3 shown, including the following steps:
[0059] (a) Etching of metal copper layer
[0060] After the aluminum nitride ceramic substrate is filmed, exposed and developed, the exposed metal copp...
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