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A kind of preparation method based on surface pn crystalline silicon solar cell

A technology of silicon solar cells and crystals, applied in the field of solar photovoltaics, can solve the problems of low accuracy, inability to meet accurate, fast measurement of solar radiation, slow response, etc., to achieve the effect of improving conversion efficiency, reducing dead layers, and increasing Voc

Active Publication Date: 2022-08-09
XI AN JIAOTONG UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

Its slow response and low accuracy (5%) cannot meet the needs of accurate and fast measurement of solar radiation

Method used

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  • A kind of preparation method based on surface pn crystalline silicon solar cell
  • A kind of preparation method based on surface pn crystalline silicon solar cell
  • A kind of preparation method based on surface pn crystalline silicon solar cell

Examples

Experimental program
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Effect test

Embodiment 1

[0039] Referring to Figure 4(a), a surface n + The preparation method of the p-crystalline silicon solar cell is as follows: first, a p-type silicon wafer 7 with a resistivity of 2Ω·cm and a thickness of 400um is selected, the surface of the p-type silicon wafer 7 is ultrasonically cleaned with an electronic cleaning agent, and then the surface of the p-type silicon wafer 7 is cleaned by mass percentage concentration. 1.5%, the temperature is 82 ℃ of sodium hydroxide solution to corrode the texturing, the texturing time is 20min, after the texture preparation is completed, the silicon wafer is sprayed, pickled, rinsed, pre-dehydrated and dried.

[0040] Then, the surface of the silicon wafer after texturing is oxidized to form a silicon dioxide film, wherein the oxidation temperature is 850° C. and the oxidation time is 30 minutes to form a silicon dioxide film with a thickness of about 0.3um.

[0041] For photolithography of the oxidized silicon wafer, first, spin-coat the po...

Embodiment 2

[0056] Referring to Fig. 4(b), a surface p + The preparation method of the n-crystalline silicon solar cell is as follows: first, an n-type silicon wafer 11 with a resistivity of 2Ω·cm and a thickness of 400um is selected, and the surface of the n-type silicon wafer 11 is ultrasonically cleaned with an electronic cleaning agent. 1.5%, the temperature is 82 ℃ of sodium hydroxide solution to corrode the texturing, the texturing time is 15min, after the preparation is completed, the silicon wafer is sprayed, pickled, rinsed, pre-dehydrated and dried.

[0057] Then, the surface of the silicon wafer after texturing is oxidized to form a silicon dioxide film, wherein the oxidation temperature is 850° C., and the oxidation time is 40 minutes to form a silicon dioxide film with a thickness of about 0.35um.

[0058] For photolithography of the oxidized silicon wafer, first, spin-coat the positive photoresist evenly on the silicon wafer by spin coating. The spin coating speed is 2000rpm...

Embodiment 3

[0073] Referring to Figure 4(a), a surface n + The preparation method of p-crystalline silicon solar cell is as follows: first, select a p-type original silicon wafer with a resistivity of 1Ω·cm and a thickness of 100um, use an electronic cleaning agent to ultrasonically clean the surface of the original silicon wafer, and then use a mass percentage concentration of 1%. , the temperature is 80 ℃ sodium hydroxide solution for etching and texturing, and the texturing time is 15min. After the preparation is completed, the silicon wafers are sprayed, pickled, rinsed, pre-dehydrated and dried.

[0074] Then, the surface of the silicon wafer after texturing is oxidized to form a silicon dioxide film, wherein the oxidation temperature is 1000° C., and the oxidation time is 10 minutes to form a silicon dioxide film with a thickness of about 0.2um.

[0075] For photolithography of the oxidized silicon wafer, first, spin-coating the positive photoresist uniformly on the silicon wafer, t...

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Abstract

The invention discloses a preparation method based on surface pn crystalline silicon solar cell. First, the original silicon wafer is cleaned, textured, oxidized and photolithographically processed, and the surface pn junction is formed on the surface of the silicon wafer by the method of selective local diffusion. , and then remove the pn junction on the edge and the back side, form corresponding passivation layers on the front and back sides, and then form electrodes by screen printing and sintering. The preparation method of the above-mentioned surface pn crystalline silicon solar cell is to carry out local diffusion on the light-receiving surface of the cell to form a surface pn junction. Such a surface pn junction avoids the existence of a "dead layer" on the surface of traditional silicon solar cells, so that the incident ultraviolet photons All converted into electrical output, which is conducive to improving the efficiency of silicon solar cells, which can be used for both power generation and ultraviolet detection or solar spectrum detection.

Description

technical field [0001] The invention belongs to the technical field of solar photovoltaic, in particular to a preparation method of a surface pn crystalline silicon solar cell. Background technique [0002] At present, crystalline silicon solar cells are the main force of photovoltaic power generation, and their basic structure is that there are 0.3-0.5um n + layer (n + p battery) or 0.35-0.6um p + layer (p + n battery). In order to improve the photoelectric conversion efficiency of solar cells, the light-receiving surface is generally made of a heavily doped layer, but the heavily doped layer has a short minority carrier lifetime and no electric field. The photogenerated carriers generated by this layer absorbing photons in the ultraviolet band cannot be effectively output by diffusion, and this layer is usually called "dead layer". Therefore, the photoelectric conversion efficiency of the existing solar cells is very low in the ultraviolet wavelength band, and when us...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L31/18H01L31/0352H01L31/068
CPCH01L31/035272H01L31/1804H01L31/068Y02P70/50
Inventor 杨宏白巧巧王鹤
Owner XI AN JIAOTONG UNIV
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