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Perovskite solar cell taking V-stannic oxide as electron transport layer and preparation method of perovskite solar cell

An electron transport layer and solar cell technology, applied in the field of solar cells, can solve problems affecting the performance of perovskite solar cells, low carrier concentration, and poor electron transport characteristics, so as to improve photovoltaic response characteristics and device performance, and improve Electrical properties, effect of reducing crystal size

Active Publication Date: 2020-09-15
HENAN UNIVERSITY
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  • Application Information

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Problems solved by technology

[0003] However, most existing perovskite solar cells are based on mesoporous TiO 2 and nano-SnO 2 For the electron transport layer, non-doped TiO 2 and undoped SnO 2 The low carrier concentration and poor electron transport characteristics seriously affect the performance of perovskite solar cells

Method used

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  • Perovskite solar cell taking V-stannic oxide as electron transport layer and preparation method of perovskite solar cell

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0036] A V-SnO 2 The preparation method of the perovskite solar cell as the electron transport layer is as follows (the electron transport layer is completed in the air environment, and the rest of the preparation process is completed in the glove box):

[0037] (1) Select the deposited ITO strip electrode glass sheet and ordinary glass sheet, and wash them repeatedly with detergent to remove the oil on the surface of the glass sheet; divide the ITO conductive glass and ordinary glass into regular small pieces, such as 1 cm × 1 cm, and place them in sequence Sonicate in deionized water for 30 min, in acetone solution for 30 min, and in isopropanol solution for 30 min; dry the obtained ITO glass sheet and ordinary glass in an oven at 100 °C for 30 min to obtain clean ITO electrodes and ordinary glass sheets .

[0038] (2) Preparation of V-SnO 2 Electron transport layer:

[0039] Sequentially weigh 10 g Sn powder and 0.307 g V 2 o 5 powder (V is 4 mol% relative to the molar...

Embodiment 2

[0052] For V-SnO 2 Water dispersion, gradually increase the molar percentage of V (V relative to the molar percentage of Sn is 0, 2, 4, 6, 8, 10 mol%), after testing different V-doped molar percentages V-SnO 2 Electronic conductivity, the specific results are shown in Table 1. Table 1 shows that V doping can significantly improve its electronic conductivity.

[0053] Table 1 V-SnO obtained after introducing different mole percentages of V 2 Electronic conductivity

[0054]

[0055] The above V-SnO with different V doping amounts 2 Preparation of V-SnO with Different Doping Amounts by Aqueous Dispersion Deposition 2 Electron transport layer, (V is successively 0, 2, 4, 6, 8, 10 mol% relative to the Sn mole percentage), the photoelectric conversion efficiency of the corresponding perovskite solar cell presents a change trend that first increases and then decreases, and others are the same as in Example 1 ; The photoelectric conversion efficiency of the perovskite solar ce...

Embodiment 3

[0057] For the introduced F127 copolymer, gradually increase the concentration of the copolymer in the perovskite precursor solution (2.0 mg / mL, 4.0 mg / mL, 6.0 mg / mL, 8.0 mg / mL, 10.0 mg / mL), the corresponding The photoelectric conversion efficiency of the perovskite solar cell also shows a trend of first increasing and then decreasing, and the others are the same as in Example 1; the photoelectric conversion efficiency of the perovskite solar cell varies with the concentration of the introduced F127 copolymer as shown in Figure 5. Depend on Figure 5 It can be seen that the photoelectric conversion efficiency shows a trend of first increasing and then decreasing. Increasing the concentration of copolymer F127 can better passivate the grain boundary defects of perovskite. The layer will be thicker. Due to the insulating properties of the copolymer F127, it will hinder the separation and transport of photogenerated charges, which will seriously affect the performance of the devi...

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Abstract

The invention discloses a perovskite solar cell taking V-SnO2 as an electron transport layer and a preparation method of the perovskite solar cell. The preparation method of the perovskite solar cellcomprises the steps of (1) depositing a V-SnO2 electron transport layer on a clean ITO electrode; (2) depositing a KI interface modification layer on the V-SnO2 electron transport layer; (3) introducing a F127 copolymer into an (MAFA)CsPbIBr system; (4) depositing an (MAFA)CsPbIBr photosensitive layer on the KI interface modification layer; (5) depositing a Spiro-OMeTAD hole transport layer on thephotosensitive layer; and (6) evaporating an Au counter electrode on the Spiro-OMeTAD hole transport layer. The average photoelectric conversion efficiency of the solar cell prepared by the method reaches 22.72%, the highest photoelectric conversion efficiency exceeds 22.85% by optimizing a device preparation process, and the solar cell has good illumination stability.

Description

technical field [0001] The invention belongs to the technical field of solar cells, in particular to a V-SnO 2 Perovskite solar cells as electron transport layers and methods for their preparation. Background technique [0002] Solar cells are an important technical basis for large-scale utilization of solar energy into electric energy. The development of solar cells is a "green" new technology that alleviates the contradiction between economic development, energy and the environment. Both have made remarkable progress and have occupied most of the application market. At present, the research of solar cells presents the following new directions: 1. Develop top or bottom cells that match crystalline silicon cells, and construct stacked cells with a theoretical efficiency exceeding 33%; 2. Develop new types of solar cells such as flexible, lightweight, and colorful Batteries, to achieve complementarity with crystalline silicon batteries, to meet the needs of different market...

Claims

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Application Information

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IPC IPC(8): H01L51/46H01L51/48H01L51/42B82Y40/00B82Y30/00B82Y10/00
CPCB82Y10/00B82Y40/00B82Y30/00H10K71/12H10K71/40H10K30/15H10K2102/102Y02E10/549
Inventor 刘向阳赵晓伟牛晨秦超然
Owner HENAN UNIVERSITY
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