A preparation method of quantum dot light-emitting diodes coupled with gold nanorods

A technology of quantum dot luminescence and gold nanorods, which is applied in the manufacture of semiconductor/solid-state devices, semiconductor devices, electrical components, etc. The effect of luminous intensity, short period and high repeatability

Active Publication Date: 2021-08-31
NORTHWESTERN POLYTECHNICAL UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, the experimental process of these methods is complicated and cumbersome, the cycle is long and the repeatability is not high.

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  • A preparation method of quantum dot light-emitting diodes coupled with gold nanorods
  • A preparation method of quantum dot light-emitting diodes coupled with gold nanorods
  • A preparation method of quantum dot light-emitting diodes coupled with gold nanorods

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Embodiment 1

[0032] A method for preparing a quantum dot light-emitting diode coupled with gold nanorods, the method is specifically carried out according to the following steps:

[0033] S1. Put cadmium stearate (0.1356g, 0.2mmol) and selenium powder (0.0079g, 0.1mmol) into a 25mL three-necked flask with 4mL 1-octadecene, stir and bubble with argon for 10 minutes , the flask was heated to 240°C at a heating rate of 40°C / min, and reacted for 40 minutes. After in-situ purification, a quantitative amount of cadmium-octane diethyldithiocarbamate was added, heated to 140°C, and reacted for 20 minutes. Then cool to 80°C, and then add a quantitative amount of cadmium-octane diethyldithiocarbamate solution for shell growth until the specified number of layers is reached, and the reaction is stopped to obtain a cadmium selenide / cadmium sulfide core-shell structure Quantum dots, the quantum dot particle size ≤ 10nm, average particle size 7nm, such as figure 2 Transmission electron microscope phot...

Embodiment 2

[0041] A method for preparing a quantum dot light-emitting diode coupled with gold nanorods, the method is specifically carried out according to the following steps:

[0042] S1. Put cadmium stearate (0.1356g, 0.2mmol) and selenium powder (0.0079g, 0.1mmol) into a 25mL three-necked flask with 4mL 1-octadecene, stir and bubble with argon for 10 minutes , the flask was heated to 240°C at a heating rate of 40°C / min, and reacted for 40 minutes. After in-situ purification, a quantitative amount of cadmium-octane diethyldithiocarbamate was added, heated to 140°C, and reacted for 20 minutes. Then cool to 80°C, and then add a quantitative amount of cadmium-octane diethyldithiocarbamate solution for shell growth until the specified number of layers is reached, and the reaction is stopped to obtain a cadmium selenide / cadmium sulfide core-shell structure Quantum dots, the quantum dot particle size ≤ 10nm, average particle size 7nm, such as figure 2 Transmission electron microscope photos...

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Abstract

The invention discloses a preparation method of a quantum dot light-emitting diode coupled with gold nanorods, and belongs to the technical field of semiconductor device production. It includes the following steps: Preparation of quantum dot solution: under the protection of inert gas, the quantum dots with cadmium selenide / cadmium sulfide core-shell structure are prepared by hot injection, and then the quantum dots are dispersed in a polar solvent to obtain quantum dots Solution; preparation of light-emitting diodes: add gold nanorod aqueous solution to cover the entire surface of the hole transport layer on the conductive substrate covering the first layer of hole transport layer, spin coat the second layer of hole transport layer, and then in the second Spin-coat the quantum dot solution on the hole-transport layer and heat-treat it to form a light-emitting layer, then spin-coat an electron-transport layer on the light-emitting layer, and finally heat-evaporate a metal electrode on the electron-transport layer to obtain gold nanoparticles. Rod-coupled quantum dot light-emitting diodes. The preparation method provided by the invention has simple preparation process, short period and high repeatability.

Description

technical field [0001] The invention belongs to the technical field of semiconductor device production, and in particular relates to a method for preparing a quantum dot light-emitting diode coupled with gold nanorods. Background technique [0002] In the field of luminescence, the external quantum efficiency of red and green quantum dot light-emitting diodes with solution-prepared quantum dots as the light-emitting layer has exceeded 20%, which is almost comparable to that of organic light-emitting diodes. The most significant advantages of this solution-prepared quantum dot luminescent material are good monochromaticity and low production cost. However, in the recombination process of quantum dot materials, there are not only radiative recombination processes that contribute to luminescence, but also many non-radiative recombination processes that do not generate photons, such as the most common Auger recombination. The existence of these non-radiative recombination will ...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L51/50H01L51/56
CPCH10K71/12H10K50/115H10K50/156
Inventor 王红月郭洋阳魏洋李慧鑫张运涵王洪强
Owner NORTHWESTERN POLYTECHNICAL UNIV
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