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Optoelectronic chip and its hybrid integration method

An optoelectronic chip, hybrid integration technology, applied in the coupling of optical waveguides, optics, light guides, etc., can solve the problems of large time jitter, narrow bandwidth, slow speed, etc., to achieve temperature compensation effect, low power consumption, and improved stability. Effect

Active Publication Date: 2021-09-07
SHANGHAI JIAO TONG UNIV
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Due to bottlenecks such as large time jitter, slow speed, and narrow bandwidth in electronic technology, further performance improvement faces big problems

Method used

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  • Optoelectronic chip and its hybrid integration method
  • Optoelectronic chip and its hybrid integration method
  • Optoelectronic chip and its hybrid integration method

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Embodiment

[0024] Technical scheme of the present invention is as follows:

[0025] refer to figure 1 , figure 1 It is a cross-sectional view of an embodiment of the photoelectric chip of the present invention. It can be seen from the figure that the photoelectric chip of the present invention includes a silicon substrate 1, a silicon dioxide layer 2, a bonding medium layer 3, and a lithium niobate waveguide layer 4 arranged in sequence from bottom to top. and a metal electrode layer, the silicon substrate 1 is a chip base, and a radio frequency chip embedding groove 5 is dug; a metal ground 5-1 and a radio frequency chip 5-2 are arranged in the chip embedding groove 5; The silicon dioxide layer 2 described above is used to protect the radio frequency chip 5-2, the through-silicon via TSV10 (Through Silicon Via,) and the RDL (Redistribution Layer, rewiring), and at the same time form a temperature compensation effect with the lithium niobate material; the described The bonding dielectr...

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Abstract

An optoelectronic chip and its hybrid integration method, the optoelectronic chip includes a silicon substrate, a radio frequency chip, a silicon dioxide layer, a BCB layer, a silicon germanium layer, a lithium niobate waveguide layer and a metal electrode layer arranged sequentially from bottom to top , Metal vias run through from the RF chip to the metal electrode. The invention realizes the integration of photoelectric chips, reduces the link loss and crosstalk level, and minimizes the signal degradation; at the same time, it utilizes the opposite characteristics of the frequency temperature coefficient of silicon dioxide and LN, effectively realizes the temperature compensation effect, and improves system stability. The electrode structure of the system adopts the structure of DC direct electrode and RF interdigitated electrode, which effectively reduces the RF reflection loss. In addition, the chip architecture can be implemented using mature semiconductor process technology, which is of great significance for the optoelectronic system to be small in size, low in power consumption, and practical.

Description

technical field [0001] The invention relates to a microwave photonic device, in particular to a photoelectric chip and a hybrid integration method thereof. Background technique [0002] With the development of high-speed data communication technology, the requirements for communication equipment with large capacity, high spectral efficiency, low delay, and high energy efficiency are getting higher and higher. Due to bottlenecks such as large time jitter, slow speed, and narrow bandwidth in electronic technology, further performance improvement faces great problems. The photon itself has the advantages of low jitter, low delay, and broadband, so the optoelectronic system came into being. The photoelectric system is expected to solve the energy consumption and capacity problems of the system, and will have broad application prospects in the fields of sensing, computing, biology, medicine, and agriculture. The photoelectric system consists of two parts: optical devices and el...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): G02B6/12G02B6/13G02B6/136G02B6/42
CPCG02B6/12G02B6/13G02B6/136G02B6/4201
Inventor 邹卫文李俊燕钱娜张林博秦睿恒
Owner SHANGHAI JIAO TONG UNIV
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