Member for semiconductor manufacturing apparatus, method for manufacturing the same, and mold
A technology for manufacturing equipment and forming molds, which is applied in the field of semiconductor manufacturing equipment components and their manufacturing and forming molds, and can solve problems such as difficult and easy manufacturing
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Embodiment 1
[0099]1. Forming process
[0100] First, 100 parts by mass of aluminum nitride powder (purity 99.7%), 5 parts by mass of yttrium oxide, 2 parts by mass of a dispersant (polycarboxylic acid copolymer), and 30 parts by mass of a dispersion medium (polybasic acid ester) were first prepared using a ball mill (drum). By mixing for 14 hours, a ceramic slurry precursor was obtained. For this ceramic slurry precursor, add 4.5 parts by mass of isocyanate (4,4'-diphenylmethane diisocyanate), 0.1 part by mass of water, 0.4 part by mass of catalyst (6-dimethylamino-1-hexanol) and Mixing is performed to obtain a ceramic slurry. Using this ceramic slurry, follow Figure 5 The sequence shown produces the final shaped body 70 . The inclination angle θ of the molding die 40 was 0.5°. The height difference d between the center position of the circular surface of the molding die 40 and the position separated by 150 mm in the radially outward direction from the center position was 1.3 mm. In...
Embodiment 2
[0107] 1. Forming process
[0108] A ceramic slurry precursor was prepared in the same manner as in Example 1. 4.5 parts by mass of isocyanate (hexamethylene diisocyanate), 0.1 parts by mass of water, and 0.4 parts by mass of catalyst (6-dimethylamino-1-hexanol) were added to the ceramic slurry precursor and mixed to obtain ceramic slurry. Use the ceramic slurry according to Figure 5 The sequence shown produces the final shaped body 70 . The inclination angle θ of the molding die 40 was 0.5°, and the height difference d was 1.3 mm. The heating electrode 14 and the RF electrode 16 were formed by screen-printing Mo paste (containing aluminum nitride powder (purity: 99.7%)). Therefore, the heater electrode groove 51a and the RF electrode groove 52a are omitted.
[0109] 2. Drying, degreasing and pre-burning process
[0110] The obtained final molded body 70 was dried at 100° C. for 10 hours, then degreased and calcined at a maximum temperature of 1300° C. in a hydrogen atm...
Embodiment 3
[0114] 1. Forming process
[0115] 5% by weight of yttrium oxide was added as a sintering aid to 95% by weight of aluminum nitride powder, and mixed with a ball mill. A binder is added to the obtained mixed powder, and granulation is performed by a spray granulation method. The obtained granulated powder is degreased, and molded into a disc-shaped molded body and a tubular molded body by die molding and CIP. A Mo mesh as an RF electrode and a Mo coil as a heating electrode were embedded in the disk-shaped molded body.
[0116] 2. Firing process
[0117] The disk-shaped molded body was fired at 1860° C. for 6 hours by a hot press method in nitrogen gas to form a disk-shaped fired body. In addition, the tubular formed body was fired at 1860° C. for 6 hours under normal pressure in nitrogen gas to form a tubular fired body.
[0118] 3. Joining process
[0119] The joint surface of the disc-shaped fired body and the joined surface of the tubular fired body were machined with ...
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