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Silicon carbide wafer surface cleaning method

A surface cleaning and silicon carbide technology, applied in electrical components, semiconductor/solid-state device manufacturing, circuits, etc., can solve the problem of cumbersome cleaning steps for silicon carbide wafers

Pending Publication Date: 2020-10-23
浙江富芯微电子科技有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] The main purpose of the present invention is to provide a method for cleaning the surface of silicon carbide wafers. The cleaning method is simple and environmentally friendly, can quickly and effectively remove pollutants on the surface of silicon carbide wafers, and is hydrogen passivated on the surface of the wafer, improving the follow-up process of silicon carbide wafers. Use efficiency to solve the technical problems of cumbersome silicon carbide wafer cleaning steps and surface re-adsorption after cleaning in the prior art

Method used

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  • Silicon carbide wafer surface cleaning method
  • Silicon carbide wafer surface cleaning method
  • Silicon carbide wafer surface cleaning method

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0048] Put the silicon carbide wafer A that has undergone chemical mechanical polishing (CMP) into a holding furnace in a pure oxygen atmosphere (oxygen content ≥ 99%, pressure 1.2 times atmospheric pressure), and hold at a holding temperature of 800°C for 3 minutes.

[0049] Immerse the high-temperature-treated silicon carbide wafer A in a mixed solution of hydrofluoric acid and hydrochloric acid with a volume ratio of 1:15, and perform megasonic cleaning at room temperature with a megasonic frequency of 1000 kHz and a cleaning time of 2 minutes; Rinse both sides with Ou ultra-pure deionized water for 5 minutes. Wherein, the mass concentration of hydrofluoric acid is 40%, and the mass concentration of hydrochloric acid is 36%, both of which are industrial standard reagents.

[0050] The silicon carbide wafer A after pickling and rinsing was immersed in 18.25 megohm ultrapure deionized water at a temperature of 100°C for 15 minutes, and finally blown dry with nitrogen. Wherei...

Embodiment 2

[0052] Put the silicon carbide wafer B that has undergone chemical mechanical polishing (CMP) into a holding furnace in a pure oxygen atmosphere (oxygen content ≥ 99%, pressure 1.2 times atmospheric pressure), and hold at a holding temperature of 1000°C for 3 minutes.

[0053] Immerse the silicon carbide wafer B that has been heat-insulated in a mixed solution of hydrofluoric acid and hydrochloric acid with a volume ratio of 1:15, and perform megasonic cleaning at room temperature with a megasonic frequency of 1000 kHz and a cleaning time of 3 minutes; then use 18.25 M Rinse both sides with Ou ultra-pure deionized water for 5 minutes. Wherein, the mass concentration of hydrofluoric acid is 40%, and the mass concentration of hydrochloric acid is 36%, both of which are industrial standard reagents.

[0054] Soak the pickled and rinsed silicon carbide wafer B in 18.25 megohm ultrapure deionized water at 100°C for 10 minutes, and finally dry it with nitrogen. Wherein, nitrogen is...

Embodiment 3

[0056] Put the silicon carbide wafer C that has undergone chemical mechanical polishing (CMP) into a holding furnace in a pure oxygen atmosphere (oxygen content ≥ 99%, pressure 1.1 times atmospheric pressure), and hold at a holding temperature of 1000°C for 6 minutes.

[0057] Dip the heat-insulated silicon carbide wafer C into a mixed solution of hydrofluoric acid and hydrochloric acid with a volume ratio of 2:15, and perform ultrasonic cleaning at room temperature for 2 minutes; Rinse both sides with water for 15 minutes. Wherein, the mass concentration of hydrofluoric acid is 40%, and the mass concentration of hydrochloric acid is 36%, both of which are industrial standard reagents.

[0058] The silicon carbide wafer C after pickling and rinsing was immersed in 18.25 megohm ultrapure deionized water at 100° C. for 8 minutes, and finally blown dry with nitrogen. Wherein, nitrogen is high-purity nitrogen with a mass fraction of 99.999%, and the temperature is room temperatur...

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Abstract

The invention provides a silicon carbide wafer surface cleaning method. The silicon carbide wafer surface cleaning method comprises the following steps of: high-temperature treatment: enabling a silicon carbide wafer to be subjected to high-temperature treatment, so that an oxide layer is formed on the surface of the silicon carbide wafer; acidizing: acidizing the silicon carbide wafer subjected to high-temperature treatment to remove an oxide layer on the surface of the silicon carbide wafer; and passivation treatment: carrying out passivation treatment on the acidified silicon carbide waferso as to form a passivation layer on the surface of the silicon carbide. The cleaning method is simple and environment-friendly to operate, pollutants on the surface of the silicon carbide wafer can be quickly and effectively removed, hydrogen passivation is carried out on the surface of the wafer, and the subsequent use efficiency of the silicon carbide wafer is improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor material surface cleaning, in particular to a method for cleaning the surface of a silicon carbide wafer. Background technique [0002] As a representative of the third-generation semiconductor material, silicon carbide has the characteristics of energy bandwidth, high thermal conductivity, high saturation drift velocity of electrons, high critical breakdown electric field, low dielectric constant, and good chemical stability. It is an ideal material for high-frequency, high-power, radiation-resistant, short-wavelength light-emitting and photoelectric integration components. It has broad application prospects in high-frequency, high-power, high-temperature-resistant, radiation-resistant semiconductor components and ultraviolet detectors. . The production of silicon carbide wafers is an upstream industry in the semiconductor industry, and the surface quality of wafers plays a vital role in t...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L21/02H01L21/04
CPCH01L21/02052H01L21/045
Inventor 徐良朱振佳蓝文安杨新鹏占俊杰刘建哲余雅俊郭炜叶继春夏建白
Owner 浙江富芯微电子科技有限公司
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