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Heterogeneous semiconductor film and preparation method thereof

A semiconductor and thin film technology, applied in the field of heterogeneous semiconductor thin film and its preparation, can solve the problems of thermal mismatch, high preparation cost, and low utilization rate of stripped ions

Active Publication Date: 2020-10-27
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, semiconductor thin films prepared based on ion stripping technology often have more defects, the utilization rate of stripped ions is not high, and the preparation cost is high.
In addition, thermal mismatch issues arise due to the lower limit of implant dose and energy required by this technology, resulting in a risk of fragmentation
To sum up: On the one hand, in the process of preparing semiconductor films based on ion stripping technology, the thermal mismatch between semiconductors and other substrates is relatively serious, and debris is prone to occur during annealing; on the other hand, the ion utilization rate required for stripping semiconductors is not high enough High, excess ions will aggravate the damage to the material

Method used

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  • Heterogeneous semiconductor film and preparation method thereof
  • Heterogeneous semiconductor film and preparation method thereof

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preparation example Construction

[0022] combine figure 1 and figure 2 As shown, the implementation of the present invention provides a method for preparing a heterogeneous semiconductor thin film, the method comprising the following steps:

[0023] S1. Obtain a semiconductor single crystal wafer 1 having a first polished surface 11;

[0024] S2. Acquire a second polishing surface 21 ( figure 1 heterogeneous substrate 2 where the mid-bottom surface is not visible);

[0025] S3. Deposit a layer of buffer layer 3 on the first polished surface 11 of the semiconductor single crystal wafer 1, the semiconductor single crystal wafer 1 and the buffer layer 3 together form a first composite structure;

[0026] S4, implanting barrier layer ions into the semiconductor single crystal wafer 1, and the barrier layer ions form a barrier layer in the semiconductor single crystal wafer 1;

[0027] S5. Perform annealing treatment on the first composite structure after forming the barrier layer: the annealing temperature is...

specific Embodiment approach 1

[0043] combined with figure 2 , the steps are as follows: obtain a lithium niobate single crystal wafer with the first polished surface, the size of the lithium niobate single crystal wafer is 4inch (inch), and the thickness is 500 μm (micrometer), and the surface roughness of the first polished surface is 0.5nm (nano); obtain a SiC substrate with a second polished surface, the size of the SiC substrate is 4inch, the thickness is 400 μm, and the surface roughness of the second polished surface is 0.3nm; in the first polishing of lithium niobate single crystal wafer Al on the surface is deposited with a thickness of 20nm by ALD (atomic layer deposition) 2 o 3 layer, LiNbO3 single crystal wafer and Al 2 o 3 The layers together form a first composite structure. Subsequently, the implantation energy to the lithium niobate single crystal wafer was 140Kev, and the implantation dose was 5*10 14 ions / cm 2 Ar ions, the implantation depth is 50nm from the outer surface of the buf...

specific Embodiment approach 2

[0045] combined with figure 2 , the steps are as follows: obtain a gallium nitride single crystal wafer with a first polished surface, the size of the gallium nitride single crystal wafer is 5 inches, the thickness is 460 μm, and the surface roughness of the first polished surface is 0.6 nm; obtain a gallium nitride single crystal wafer with a second polished surface Si substrate on the surface, the size of the Si substrate is 4inch, the thickness is 400μm, the surface roughness of the second polished surface is 0.3nm; ALD (atomic layer deposition) is used on the first polished surface of the gallium nitride single crystal wafer method to deposit HfO with a thickness of 20nm 2 layers, GaN monocrystalline wafers and HfO 2 The layers together form a first composite structure. Subsequently, the implantation energy to the gallium nitride single crystal wafer is 80Kev, and the implantation dose is 5*10 13 ions / cm 2 Ar ions, the implantation depth is 50nm from the outer surface...

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Abstract

The invention discloses a preparation method of a heterogeneous semiconductor film. The preparation method comprises the steps of obtaining a semiconductor single crystal wafer with a first polished surface; obtaining a heterogeneous substrate with a second polished surface; depositing a buffer layer on the first polished surface of the semiconductor single crystal wafer to form a first compositestructure; injecting barrier layer ions into the semiconductor single crystal wafer to form a barrier layer; conducting annealing treatment; injecting H ions into the semiconductor single crystal wafer along a channel of the semiconductor single crystal wafer, wherein the atomic number of the H ions is less than that of the barrier layer ions, and the injection energy is greater than that of the barrier layer ions; removing the buffer layer; bonding the semiconductor single crystal wafer with the heterogeneous substrate to obtain a second composite structure; and conducting annealing treatmentto obtain the heterogeneous semiconductor film. According to the method, the barrier layer ions are injected into the semiconductor single crystal wafer to form the barrier layer so as to capture theH ions, so that damage caused by ion stripping is reduced, and the utilization rate of the H ions and the quality of the film are greatly improved.

Description

technical field [0001] The invention relates to the technical field of semiconductor materials, in particular to a heterogeneous semiconductor thin film and a preparation method thereof. Background technique [0002] At present, the ion stripping technology has become mature, and this technology is mainly used to produce silicon-on-insulator, and can be extended to various semiconductors through this technology. However, semiconductor thin films prepared based on ion stripping technology often have many defects, the utilization rate of stripped ions is not high, and the preparation cost is high. In addition, thermal mismatch issues arise due to the lower limit of implant dose and energy required by this technology, which leads to the risk of fragmentation. To sum up: On the one hand, in the process of preparing semiconductor films based on ion stripping technology, the thermal mismatch between semiconductors and other substrates is relatively serious, and debris is prone to...

Claims

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Application Information

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IPC IPC(8): H01L21/18H01L21/265H01L21/34H01L21/425H01L21/50
CPCH01L21/34H01L21/187H01L21/2654H01L21/425H01L24/83H01L2224/83048H01L2224/83051
Inventor 欧欣徐文慧游天桂沈正浩
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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