A ni that is compatible with the si process x the si y /ga 2 o 3 Schottky diode and its preparation method

Abstract

The invention provides a Ni that is compatible with the Si process x Si y / Ga 2 o 3 A Schottky diode and a preparation method thereof are used to form a Schottky electrode and an ohmic electrode on a marking sheet, the working surface of the marking sheet has a first region, a second region and a third region, comprising the following steps: 2 o 3 thin film over the first area, and then the Ga 2 o 3 The surface of the film and the working surface are all coated with glue; 2 o 3 The surface of the film and the working surface are photolithographically removed to obtain the anode window; sputtering deposits Si and Ni at the anode window; quickly annealing the deglued marking sheet under an inert atmosphere and a predetermined temperature for a predetermined time; in the first area and the third area produced with Ga 2 o 3 ohmic electrode, so as to get Ni x Si y / Ga 2 o 3 Schottky diodes. Ni produced by the present invention x Si y / Ga 2 o 3 The Schottky electrode has low resistivity, excellent thermal stability, and can produce Ni with adjustable barrier height under the condition of being compatible with the silicon process. x Si y / Ga 2 o 3 Schottky anode has wide application prospects.

Description

technical field [0001] The invention relates to the field of ultra-wide bandgap compound semiconductor technology and the field of Schottky power diodes, in particular to a Ni x Si y / Ga 2 o 3 Schottky diodes and methods of making them. Background technique [0002] In recent years, ultra-wide bandgap semiconductor power devices have attracted more and more attention due to their high energy conversion efficiency and large breakdown voltage. And because the Schottky diode has high switching frequency, small forward voltage drop, and no reverse recovery time, it can be used in high-frequency and high-power conversion. by Ga 2 o 3 material made of Ga 2 o 3 Schottky diode power devices have a bright application potential due to their low conduction loss and switching loss in high voltage and high temperature environments. However, most of the reported Ga 2 o 3 Schottky diode power devices use metal electrodes, in Ga 2 o 3 The surface forms a metal / semiconductor Sch...

AI Technical Summary

Problems solved by technology

As a compound semiconductor process, Ga 2 o 3 Schottky diode power devices only use metal electrodes with different work functions to contact the semiconductor surface to form the anode and cathode of the device. In the manufacture of Schottky anodes, the Schottky barrier is fixed due to the fixed work function of the metal. value, so the adjustment of the fine process has limited improvement on the performance of the Schottky diode

At the same time, Ga 2 o 3 The Schottky anode has the disadvantages of high barrier height, small adjustable range of barrier height and high turn-on voltage

[0003] At present, the silicon-based integrated circuit process is the most mature and complex semiconductor manufacturing technology. If some advantages of the silicon-based integrated circuit process can be applied to the compound process, the new structure of the wide-bandgap semiconductor device can be reconstructed and the performance of the device can be improved. , this will be a very innovative research work, but if polysilicon compatible with the silicon process is used as the Schottky electrode, the resistivity will be greatly improved

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