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A ni that is compatible with the si process x the si y /ga 2 o 3 Schottky diode and its preparation method

A Schottky diode and process technology, applied in semiconductor/solid-state device manufacturing, semiconductor devices, electrical components, etc., can solve problems such as limited improvement in Schottky diode performance, small adjustable range of potential barrier height, and increased resistivity. , to achieve the effect of excellent thermal stability, low on-resistance and low resistivity

Active Publication Date: 2021-12-03
FUDAN UNIV
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

As a compound semiconductor process, Ga 2 o 3 Schottky diode power devices only use metal electrodes with different work functions to contact the semiconductor surface to form the anode and cathode of the device. In the manufacture of Schottky anodes, the Schottky barrier is fixed due to the fixed work function of the metal. value, so the adjustment of the fine process has limited improvement on the performance of the Schottky diode
At the same time, Ga 2 o 3 The Schottky anode has the disadvantages of high barrier height, small adjustable range of barrier height and high turn-on voltage
[0003] At present, the silicon-based integrated circuit process is the most mature and complex semiconductor manufacturing technology. If some advantages of the silicon-based integrated circuit process can be applied to the compound process, the new structure of the wide-bandgap semiconductor device can be reconstructed and the performance of the device can be improved. , this will be a very innovative research work, but if polysilicon compatible with the silicon process is used as the Schottky electrode, the resistivity will be greatly improved

Method used

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  • A ni that is compatible with the si process <sub>x</sub> the si <sub>y</sub> /ga <sub>2</sub> o <sub>3</sub> Schottky diode and its preparation method
  • A ni that is compatible with the si process <sub>x</sub> the si <sub>y</sub> /ga <sub>2</sub> o <sub>3</sub> Schottky diode and its preparation method
  • A ni that is compatible with the si process <sub>x</sub> the si <sub>y</sub> /ga <sub>2</sub> o <sub>3</sub> Schottky diode and its preparation method

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Embodiment 1

[0036] A Ni that is compatible with the Si process x Si y / Ga 2 o 3 Schottky diode manufacturing method, comprising the following steps:

[0037] Step one, the Ga 2 o 3 The film is covered on the working surface of the marking sheet, and the working surface is completely coated with glue.

[0038] In this embodiment, the specific operation of step 1 is as follows:

[0039] Choose SiO2 2 / Si double-layer marking sheet is used as the marking sheet of this embodiment, and its SiO 2 The surface serves as a working surface having first and second regions adjoining each other and a third region adjoining and cooperating with the first region.

[0040] Will be from Ga 2 o 3 The area torn off from the single crystal is 3×20μm 2 Ga 2 o 3 Film mechanically transferred to an area of ​​1 × 1 cm 2 SiO 2 SiO / Si double-layer marker sheet 2 surface, with SiO 2 / Si bilayer marker sheet as Ga 2 o 3 For the supporting body of the film, apply glue evenly on the working surface,...

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Abstract

The invention provides a Ni that is compatible with the Si process x Si y / Ga 2 o 3 A Schottky diode and a preparation method thereof are used to form a Schottky electrode and an ohmic electrode on a marking sheet, the working surface of the marking sheet has a first region, a second region and a third region, comprising the following steps: 2 o 3 thin film over the first area, and then the Ga 2 o 3 The surface of the film and the working surface are all coated with glue; 2 o 3 The surface of the film and the working surface are photolithographically removed to obtain the anode window; sputtering deposits Si and Ni at the anode window; quickly annealing the deglued marking sheet under an inert atmosphere and a predetermined temperature for a predetermined time; in the first area and the third area produced with Ga 2 o 3 ohmic electrode, so as to get Ni x Si y / Ga 2 o 3 Schottky diodes. Ni produced by the present invention x Si y / Ga 2 o 3 The Schottky electrode has low resistivity, excellent thermal stability, and can produce Ni with adjustable barrier height under the condition of being compatible with the silicon process. x Si y / Ga 2 o 3 Schottky anode has wide application prospects.

Description

technical field [0001] The invention relates to the field of ultra-wide bandgap compound semiconductor technology and the field of Schottky power diodes, in particular to a Ni x Si y / Ga 2 o 3 Schottky diodes and methods of making them. Background technique [0002] In recent years, ultra-wide bandgap semiconductor power devices have attracted more and more attention due to their high energy conversion efficiency and large breakdown voltage. And because the Schottky diode has high switching frequency, small forward voltage drop, and no reverse recovery time, it can be used in high-frequency and high-power conversion. by Ga 2 o 3 material made of Ga 2 o 3 Schottky diode power devices have a bright application potential due to their low conduction loss and switching loss in high voltage and high temperature environments. However, most of the reported Ga 2 o 3 Schottky diode power devices use metal electrodes, in Ga 2 o 3 The surface forms a metal / semiconductor Sch...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): H01L29/872H01L21/34
CPCH01L29/66007H01L29/872
Inventor 张卫李晓茜陈金鑫卢红亮黄伟
Owner FUDAN UNIV
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