Unlock instant, AI-driven research and patent intelligence for your innovation.

Production method of silicon carbide single crystal

A technology of silicon carbide single crystal and manufacturing method, applied in chemical instruments and methods, single crystal growth, single crystal growth and other directions, can solve the problems of slow growth speed and long time growth, etc.

Inactive Publication Date: 2020-10-30
SHIN-ETSU HANDOTAI CO LTD
View PDF7 Cites 0 Cited by
  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

In addition, the crystal growth of SiC depends on the sublimation rate, and the growth rate is relatively slow compared with the Tchachelski method of Si or the LPE manufacturing method of GaAs, etc.
Therefore, it takes a long time to grow

Method used

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
View more

Image

Smart Image Click on the blue labels to locate them in the text.
Viewing Examples
Smart Image
  • Production method of silicon carbide single crystal
  • Production method of silicon carbide single crystal
  • Production method of silicon carbide single crystal

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0063] Under the following growth conditions, according to image 3 In the process shown, a SiC single crystal with a diameter of 100 mm is grown.

[0064]

[0065] Inner diameter of growth container 105mm

[0066] Seed crystal substrate··· SiC single crystal with a main surface of {0001} plane, a diameter of 100 mm (the diameter of the seed crystal substrate / the inner diameter of the growth vessel is 95%), and a maximum thickness of 8 mm including the end face of the growth ingot of a convex shape Substrate

[0067] Growth temperature···2200℃

[0068] Pressure···10Torr(13hPa)

[0069] Atmosphere...Argon, Nitrogen

[0070] After the SiC single crystal was grown, the straightness ratio (straight body portion / total length) was investigated, and the result was 90%. In addition, a multi-wire saw (multi-wire saw) is used to cut the wafer, and after grinding, mirror polishing and CMP polishing, observe the surface of the wafer, such as Figure 4 As shown, it can be judged that there is no he...

Embodiment 2

[0076] The SiC single crystal was grown under the same conditions as in Example 1, except that a seed crystal substrate with a diameter of 84 mm (the diameter of the seed crystal substrate / the inner diameter of the growth vessel was 80%) was used.

[0077] After the SiC single crystal was grown, the straightness ratio (straight body portion / total length) was investigated, and the result was 85%. After the SiC single crystal grows, the wafer is cut with a multi-wire saw, and after grinding, mirror polishing and CMP polishing, the surface of the wafer is observed, and it can be judged that there is no abnormal polytype. In addition, a total of five batches of manufacturing were carried out. The results are shown in Table 2. As shown in Table 2, none of the five batches produced allopolytypes (that is, the allopolytype generation rate was 0%).

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

PUM

PropertyMeasurementUnit
diameteraaaaaaaaaa
thicknessaaaaaaaaaa
Login to View More

Abstract

A production method of silicon carbide single crystal, for sublimating a silicon carbide raw material in a growth vessel to grow a silicon carbide single crystal on a seed crystal substrate, is characterized in that the seed crystal substrate which is used has an installation surface installed in the growth vessel that is in the {0001} plane with an off-angle of no more than 1 degree, and has a crystal growth surface that is a convex growth end face of an ingot, and the diameter of the seed crystal substrate is set to greater than or equal to 80% of the inner diameter of the growth vessel. Inthis way, a silicon carbide single crystal production method is provided which enables producing a silicon carbide single crystal with growth with no off-angle, in other words, in which different polytypes are not prone to occur even in the growth direction on the basal plane, which has no inclination from the C axis <0001>, and which has a high straight barrel section ratio.

Description

Technical field [0001] The present invention relates to a method for manufacturing silicon carbide that undergoes crystal growth of silicon carbide by a sublimation method. Background technique [0002] In recent years, a large number of inverter circuits have been used in electric vehicles and electric air-conditioning and heating machines. Because of the low power loss and the ability to achieve higher withstand voltage characteristics compared with devices using semiconductor Si crystals, a silicon carbide ( Hereafter, sometimes referred to as SiC) semiconductor crystal. [0003] As a representative and practical growth method for crystals with a high melting point such as SiC and crystals that are difficult to grow in a liquid phase, there is a sublimation method. The sublimation method is a method in which a solid raw material is sublimated in a container at a high temperature of about 2000°C or more than 2000°C, and crystals are grown on an opposing seed crystal (Patent Docu...

Claims

the structure of the environmentally friendly knitted fabric provided by the present invention; figure 2 Flow chart of the yarn wrapping machine for environmentally friendly knitted fabrics and storage devices; image 3 Is the parameter map of the yarn covering machine
Login to View More

Application Information

Patent Timeline
no application Login to View More
Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/36C30B23/06
CPCC30B23/025C30B29/36C30B23/066C30B29/60
Inventor 池田均松本雄一海老原正人高桥亨
Owner SHIN-ETSU HANDOTAI CO LTD