Silicon carbide slurry preparation method applied to free direct writing forming technology
A technology of silicon carbide slurry and direct writing forming, applied in the field of materials
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preparation example Construction
[0052] The stirrer used in the preparation process of the suspension in the embodiment of the present invention is the JB300-SH digital display constant speed powerful stirrer of Shanghai Hengping Company.
[0053] The equipment used in the sintering process in the embodiment of the present invention is a vacuum high-temperature sintering furnace.
[0054] The equipment used for the Zeta potential test in the embodiment of the present invention is a Zeta potential meter from Bedford Hills Company.
[0055] The equipment used in the rheological performance test in the embodiment of the present invention is a rotational rheometer from TA Company, and the equipment model is DHR-2.
[0056] The equipment used in the scanning electron microscope pictures provided by the implementation of the present invention is Hitachi ScanningElectron Microscope, and the equipment model is s4800.
Embodiment 1
[0058] 292gSiC, 4gB 4 C (as a sintering aid) and 4g nano carbon black (CB) (as a sintering aid) (the mass of the sintering aid accounts for 2.7% of the total mass of the powder) powder into a polytetrafluoroethylene ball mill jar, and add 40 SiC balls with a diameter of 2mm and 400ml alcohol. Ball milled at 200rpm for 24h to prepare SiC, B 4 C and CB mixed powder. Pass the mixed powder through a 400 sieve and dry at 90°C for 24 hours. Grind the dried powder with a mortar, and pass through a 400-mesh sieve again.
[0059] In this example, the Zeta potential diagrams of silicon carbide and two kinds of sintering aid raw powders, and the Zeta potential diagrams after surface modification of the three powders with the help of dispersants are as follows figure 1 shown.
[0060] The mixed powder after sieving is slowly added to the solution containing 2.8g polyethyleneimine (PEI, M.W.=75000) dispersant (accounting for 0.93% of the total powder mass) and 80g deionized water, sti...
Embodiment 2
[0065] 292gSiC, 4gB 4 C (sintering aid) and 4g of nano-carbon black (sintering aid) powder were put into a polytetrafluoroethylene ball mill jar, and 40 SiC balls with a diameter of 2mm and 400ml of alcohol were added. Ball milled at 200rpm for 24h to prepare SiC, B 4 C and CB mixed powder. Pass the mixed powder through a 400 sieve and dry at 90°C for 24 hours. Grind the dried powder with a mortar, and pass through a 400-mesh sieve again.
[0066] Slowly add the sieved mixed powder into a solution containing 3.5g polyethyleneimine (PEI, M.W.=75000) dispersant (accounting for 1.2% of the total powder mass) and 82g deionized water, and stir while adding, Further, a ceramic slurry with a high solid content (52.9 vol%) was prepared.
[0067] Add a 2 mol / L aqueous sodium hydroxide solution to the ceramic slurry until pH = 9, and stir for 2 h. Then continue to add methyl cellulose as a thickener to obtain an adjusted slurry, and adjust the mass ratio of methyl cellulose in the ...
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Abstract
Description
Claims
Application Information
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