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Group 13 element nitride layer, free-standing substrate, functional element, and method of producing group 13 element nitride layer

A nitride layer and functional element technology, which is applied in chemical instruments and methods, semiconductor/solid-state device manufacturing, electrical components, etc. easy to wait

Active Publication Date: 2020-11-03
NGK INSULATORS LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0003] Single crystal substrates generally have small area and high price
In particular, although it is required to reduce the manufacturing cost of LEDs using large-area substrates, it is not easy to mass-produce large-area single crystal substrates, which will further increase the manufacturing cost

Method used

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  • Group 13 element nitride layer, free-standing substrate, functional element, and method of producing group 13 element nitride layer
  • Group 13 element nitride layer, free-standing substrate, functional element, and method of producing group 13 element nitride layer
  • Group 13 element nitride layer, free-standing substrate, functional element, and method of producing group 13 element nitride layer

Examples

Experimental program
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Embodiment 1

[0101] by reference figure 2 The method described is to grow the nitride crystal layer of the Group 13 element of the example of the present invention.

[0102] (Cultivation of alumina layer and seed film)

[0103] Specifically, the aluminum oxide layer 16 with a thickness of 1500 angstroms was formed on the C-plane single crystal sapphire substrate 11 by the sputtering method. Specifically, the RF magnetron sputtering method was used, the RF power was 500 W, the pressure was 1 Pa, the target was alumina (purity 99% or more), the process gas was argon (flow rate 20 sccm), and the C-plane single crystal was The sapphire substrate 11 is heated to 500° C. to form a film.

[0104] Next, on the aluminum oxide layer 16, the seed layer 12 is formed using the MOCVD method. Specifically, a low-temperature GaN layer of 40 nm was deposited at 530° C., and then a 3 μm-thick GaN film was stacked at 1,050° C. to obtain a seed crystal substrate.

[0105] (Film formation of Ge-doped GaN ...

Embodiment 2

[0160] In the same manner as in Example 1, a self-supporting substrate including a gallium nitride crystal layer was produced. However, the half-value width of the (1000) crystal plane reflection of the X-ray rocking curve of the upper surface of the free-standing substrate of Example 2 was 11100 arcsec (seconds).

[0161] In addition, the half value width can be adjusted by changing the thickness of the aluminum oxide layer at the time of sputtering as follows.

[0162] Example 1: 1500 Angstroms

[0163] Example 2: 1000 Angstroms

Embodiment 3

[0164] Example 3: 500 Angstroms

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Abstract

The invention can reduce dislocation defects on a surface and to improve yield and efficiency of a functional layer in a Group 13 element nitride crystal layer composed of a plurality of single crystal particles oriented in a specific crystal orientation in a substantially normal direction. The Group 13 element nitride layer comprising a polycrystal Group 13 element nitride is composed of a plurality of single crystal particles oriented in a specific crystal orientation in a substantially normal direction. The Group 13 element nitride comprises gallium nitride, aluminum nitride, and indium nitride, or mixed crystals thereof. The Group 13 element nitride layer has a top plane and a bottom plane, and the full width at half maximum of a (1000) plane reflection of an X-ray rocking curve on thetop plane is 20,000 to 1,500 seconds.

Description

technical field [0001] The present invention relates to a group 13 element nitride layer, a self-supporting substrate, a functional element, and a method for producing the group 13 element nitride layer. Background technique [0002] As light-emitting elements such as light-emitting diodes (LEDs) using a single crystal substrate, light-emitting elements in which various gallium nitride (GaN) layers are formed on sapphire (α-alumina single crystal) are known. For example, mass production of products having a structure in which an n-type GaN layer, a multi-quantum well layer (MQW) containing InGaN, and a p-type GaN layer are sequentially stacked on a sapphire substrate has been started. A layer of quantum well layers and barrier layers including GaN layers are alternately stacked. [0003] Monocrystalline substrates are generally small in size and expensive. In particular, although it is required to reduce the manufacturing cost of LEDs using large-area substrates, it is not...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B29/38C23C14/08C23C16/34C30B19/04H01L21/205H01L33/16
CPCH01L33/32H01L33/0075H01L33/16H01L21/0242H01L21/02488H01L21/0254H01L21/02595H01L21/02609H01L21/02625H01L21/0262H01L21/02576H01L21/02579H01L21/02458H01L21/02502H01L29/2003H01L29/045C23C16/303C23C16/01C23C14/081H01L29/66212H01L29/66462H01L29/04C30B29/403C30B30/00C23C14/0617C23C14/34C23C16/34C30B19/02C30B28/04C30B29/406H01L21/02642H01L21/02645H01L33/007H01L33/18
Inventor 坂井正宏吉野隆史今井克宏仓冈义孝
Owner NGK INSULATORS LTD