A welding method for high-purity rare earth and alloy targets

A welding method and alloy target technology are applied in welding equipment, electron beam welding equipment, metal processing equipment, etc. to achieve the effect of reducing material feeding, simple operation and ensuring thickness uniformity

Active Publication Date: 2022-02-15
GRIKIN ADVANCED MATERIALS
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

At present, there are few reports on the scientific research and industrial application of rare earth target welding technology at home and abroad.

Method used

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  • A welding method for high-purity rare earth and alloy targets
  • A welding method for high-purity rare earth and alloy targets
  • A welding method for high-purity rare earth and alloy targets

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0052] according to figure 1 The process flow chart of the processing process is carried out, and the welding surface of the rare earth Y target blank is cut and Ni back gold treatment is carried out, the back gold surface is protected, and the other surfaces of the rare earth target blank are sputtered with a protective material TaN; the back plate adopts Copper alloy C18000, gearing on the welding surface of the back plate (the gearing structure is shown in figure 2 ) and carry out Ni back gold treatment; the middle layer material is 1060Al material with a thickness of 2 mm; the 6061Al sheath material is processed by ordinary car, and it is cleaned before welding, and the inner surface of the sheath is coated with BN for protective treatment; the rare earth target material and the back plate Assemble into the sheath, and carry out electron beam sealing and welding processing; HIP welding processing is performed on the sealing and welding target material, the HIP pressure is...

Embodiment 2

[0054] The welding surface of the rare earth Y target blank is turned and Ni back gold treatment is carried out to protect the back gold surface, and the other surface of the rare earth target blank is sputtered and plated with protective material TaN; the back plate is made of copper alloy C18000, and the back plate is welded on The teeth are treated with Ni back gold; the middle layer material is 1060Al material with a thickness of 2mm; the 6061Al sheath material is processed by a general car, and it is cleaned before welding, and the inner surface of the sheath is coated with BN for protection; the rare earth target and the back plate Assemble into the sheath, and carry out electron beam sealing and welding processing; HIP welding processing is performed on the sealing and welding target material, HIP pressure is 100MPa, temperature is 300°C, heat preservation and pressure holding time is 3h, the sheath and the rare earth Y target have no reaction after welding and diffuse p...

Embodiment 3

[0056] The welding surface of the rare earth Y target blank is turned and Ni back gold treatment is carried out to protect the back gold surface, and the other surface of the rare earth target blank is sputtered and plated with protective material TaN; the back plate is made of copper alloy C18000, and the back plate is welded on The teeth are treated with Ni back gold; the middle layer material is 1060Al material with a thickness of 2mm; the 6061Al sheath material is processed by a general car, and it is cleaned before welding, and the inner surface of the sheath is coated with BN for protection; the rare earth target and the back plate Assemble into the sheath, and carry out electron beam sealing and welding processing; HIP welding is performed on the sealing and welding target material, the HIP pressure is 110MPa, the temperature is 300°C, the heat preservation and pressure holding time is 3h, and the sheath and the rare earth Y target have no reaction after welding. and dif...

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Abstract

The invention discloses a high-purity rare earth and alloy target welding method belonging to the technical field of target welding. The steps are as follows: the welding surface of the rare earth target blank and the back plate is turned, and the back gold treatment is carried out on the tooth surface; The non-welding surface of the rare earth target blank is coated with a protective layer; the welding interface between the two is provided with an intermediate layer; the sheath for welding is prepared, and the inner surface of the sheath is coated with a protective layer; the rare earth target blank, the intermediate layer and the back plate are assembled into the sheath , the sheath is subjected to electron beam sealing and welding processing to obtain a sealing and welding target; the sealing and welding target is subjected to hot isostatic pressure diffusion welding to obtain a high-purity rare earth target. The target material prepared by the present invention overcomes the problems of high activity and easy oxidation of rare earth materials and reaction pollution with the sheath material, and the welding rate of the target material is ≥ 99%, the welding strength is ≥ 60MPa, and the sheath material and the target material can be automatically Separation, saving costs and improving production efficiency.

Description

technical field [0001] The invention belongs to the technical field of target welding, in particular to a welding method for high-purity rare earth and alloy targets. Background technique [0002] With the continuous development of integrated circuit industry technology, the size of CMOS transistors is getting smaller and smaller, and the integration level is getting higher and higher. When the process node is about 65nm, SiO is often used 2 Materials; when the process node is 45-14nm, use hafnium-based composite materials; at process nodes below 10nm, hafnium-based composite materials can no longer meet the process requirements, and higher K gate dielectric materials, rare earth high-K gate dielectric materials, such as : Amorphous oxides of lanthanum, yttrium, gadolinium and other elements, because of their high dielectric constant, large band gap and good thermal stability, have become excellent substitute materials for the gate dielectric materials of the next generation...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): B23K15/06
CPCB23K15/06
Inventor 徐国进罗俊锋万小勇丁照崇张巧霞李勇军熊晓东滕海涛刘芳
Owner GRIKIN ADVANCED MATERIALS
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