A welding method for high-purity rare earth and alloy targets

Abstract

The invention discloses a high-purity rare earth and alloy target welding method belonging to the technical field of target welding. The steps are as follows: the welding surface of the rare earth target blank and the back plate is turned, and the back gold treatment is carried out on the tooth surface; The non-welding surface of the rare earth target blank is coated with a protective layer; the welding interface between the two is provided with an intermediate layer; the sheath for welding is prepared, and the inner surface of the sheath is coated with a protective layer; the rare earth target blank, the intermediate layer and the back plate are assembled into the sheath , the sheath is subjected to electron beam sealing and welding processing to obtain a sealing and welding target; the sealing and welding target is subjected to hot isostatic pressure diffusion welding to obtain a high-purity rare earth target. The target material prepared by the present invention overcomes the problems of high activity and easy oxidation of rare earth materials and reaction pollution with the sheath material, and the welding rate of the target material is ≥ 99%, the welding strength is ≥ 60MPa, and the sheath material and the target material can be automatically Separation, saving costs and improving production efficiency.

Description

technical field [0001] The invention belongs to the technical field of target welding, in particular to a welding method for high-purity rare earth and alloy targets. Background technique [0002] With the continuous development of integrated circuit industry technology, the size of CMOS transistors is getting smaller and smaller, and the integration level is getting higher and higher. When the process node is about 65nm, SiO is often used 2 Materials; when the process node is 45-14nm, use hafnium-based composite materials; at process nodes below 10nm, hafnium-based composite materials can no longer meet the process requirements, and higher K gate dielectric materials, rare earth high-K gate dielectric materials, such as : Amorphous oxides of lanthanum, yttrium, gadolinium and other elements, because of their high dielectric constant, large band gap and good thermal stability, have become excellent substitute materials for the gate dielectric materials of the next generation...

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Problems solved by technology

At present, there are few reports on the scientific research and industrial application of rare earth target welding technology at home and abroad.

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