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Method for recovering precious metal from brazing precious metal residual targets

A precious metal and residual target technology, applied in the direction of improving process efficiency, can solve problems such as non-recycling and waste, and achieve the effects of preventing corrosion of the target material, increasing the reaction rate, and low energy consumption

Inactive Publication Date: 2020-11-06
GRIKIN ADVANCED MATERIALS +1
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, this method is only suitable for targets whose backplane is made of amphoteric metals, and the backplane of the target is completely dissolved and cannot be recycled, resulting in waste

Method used

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  • Method for recovering precious metal from brazing precious metal residual targets

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0025] Take the XL Quantum high-purity gold target for Varian machine as an example: the purity of the high-purity gold target surface is 99.996% (>4N), the finished product weight is 4207.034g, the sputtering consumption after use is 841.407g, and the theoretical remaining weight of the target surface is 3365.627g; figure 1 Described schematic flow sheet, carry out noble metal recovery process:

[0026] S1) Heat the indium solder XL Quantum high-purity gold residual target at 210°C to melt the indium solder and separate the high-purity gold target surface from the back plate;

[0027] S2) Immerse the high-purity gold target surface in a nitric acid solution with a volume fraction of 50% and a temperature of 60°C for 60 s and twice for 60 s. After each acid immersion, wipe the welding surface with a dust-free cloth to remove the indium solder from the high-purity gold Target separation;

[0028] S3) Rinse the precious metal target surface in tap water first, then rinse in abs...

Embodiment 2

[0031] Take XL Quantum high-purity silver target for Varian machine as an example: high-purity silver target surface purity 99.994% (>4N) finished product weight 6863.465g, sputtering consumption after use 1372.693g, target surface theoretical residual weight 5490.772g;

[0032] S1) Heat the indium soldering XL Quantum high-purity silver residual target at 210°C to melt the indium solder and separate the high-purity silver target surface from the back plate;

[0033] S2) Immerse the high-purity silver target surface in a sulfuric acid solution with a volume fraction of 35% and a temperature of 45°C for 10 seconds and 3 times of acid leaching. After each acid immersion, wipe the welding surface with a dust-free cloth to remove the indium solder from the high-purity silver Target separation;

[0034] S3) Rinse the high-purity silver target surface in tap water first, then rinse it in absolute ethanol and then blow it dry to obtain high-purity silver without impurities, and the p...

Embodiment 3

[0037] Take the XL Quantum high-purity platinum target for Varian as an example: the purity of the high-purity platinum target surface is 99.998% (>4N), the weight of the finished product is 4417.978g, the weight consumed by sputtering after use is 883.596g, and the theoretical residual weight of the target surface is 3534.382g;

[0038] S1) Heat the indium soldering XL Quantum high-purity platinum residual target at 210°C to melt the indium solder and separate the high-purity platinum target surface from the back plate;

[0039] S2) Immerse the high-purity platinum target surface in a nitric acid solution with a volume fraction of 50% and a temperature of 65°C for 60 seconds, once for 60 seconds, and wipe the welding surface with a dust-free cloth after acid leaching to prevent indium solder from high Pure platinum target surface separation;

[0040] S3) Rinse the high-purity platinum target surface in tap water first, then rinse it in absolute ethanol and then dry it to obta...

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Abstract

The invention discloses a method for recovering precious metal from brazing precious metal residual targets, and belongs to the technical field of sputtering target material processing. The method comprises the following steps of S1) providing a target material assembly which comprises a precious metal target surface and a back plate brazed with the target surface, and separating the target surface of the target material from the back plate by using a physical method; S2) repeatedly immersing the precious metal target surface into an acid solution, so that the solder can be thoroughly separated from the target surface; and S3) cleaning the precious metal target surface in an ultrasonic cleaning machine, rinsing in absolute ethyl alcohol, and blow-drying to obtain the precious metal with the same purity as the residual target before use. The method provided by the invention can realize maximization of recycling of the precious metal residual target, the recovery rate reaches 99.8% or above, the precious metal with the same purity as the residual target before use is obtained, smelting and reprocessing can be directly carried out, the recovery rate is high, the process operation is simple, the energy consumption is low, and meanwhile, the separated back plate can be welded with a newly processed precious metal target surface, repeated utilization is achieved, and cost is saved.

Description

technical field [0001] The invention belongs to the technical field of sputtering target processing, in particular to a method for recovering precious metals from brazing precious metal residual targets. Background technique [0002] With the development of electronic information and emerging high-tech industries, the application of thin film science is becoming more and more extensive. Precious metals have good chemical stability, high electrical conductivity and thermal conductivity, unique electrical, magnetic, optical and other properties, and are widely used in the preparation of high-performance thin film materials, various high-purity elemental noble metals and new alloys and compound functional films is constantly being developed. Precious metal targets commonly used in semiconductor manufacturing include gold, silver, platinum, ruthenium and other metals and alloys. With the continuous progress and upgrading of my country's semiconductor industry technology, the d...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C22B11/00
CPCC22B11/00Y02P10/20
Inventor 郝海英付丰年江丹平宋艳青户赫龙于文军吕景波董亭义吕保国
Owner GRIKIN ADVANCED MATERIALS