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Perovskite solar cell, laminated solar cell and cell module

A solar cell and perovskite technology, applied in electrical components, electrical solid devices, circuits, etc., can solve the problem of reducing the photoelectric conversion efficiency of perovskite solar cells, increasing the recombination loss probability of photogenerated carriers, and hindering photogenerated carriers Transport and other issues, to achieve the effect of improving photoelectric conversion efficiency, high photoelectric conversion efficiency, and reducing the probability of recombination loss

Pending Publication Date: 2020-11-10
LONGI GREEN ENERGY TECH CO LTD
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

In traditional perovskite cells, the barrier band at the interface between the carrier transport layer and the perovskite absorption layer is relatively large, which hinders the transport of photogenerated carriers and increases the recombination loss probability of photogenerated carriers. Photoelectric conversion efficiency of perovskite solar cells further reduced

Method used

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  • Perovskite solar cell, laminated solar cell and cell module
  • Perovskite solar cell, laminated solar cell and cell module
  • Perovskite solar cell, laminated solar cell and cell module

Examples

Experimental program
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example 1

[0066] First, the prepared perovskite solution layer is spin-coated on the hole transport layer 105 . Specifically, CsBr, FAI, MAI and PbI2 were dissolved in N,N-dimethylformamide (N,N-Dimethylformamide, DMF) / dimethylsulfoxide (Dimethylsulfoxide, DMSO) solution, wherein the molar mass of PbI2 The molar ratio of the first material composed of CsBr, FAI and MAI is between 0.80-0.95. Control the spin-coating speed at 4000r for 30s, drop chlorobenzene on the surface of the perovskite film 10s before the end of the spin, use the anti-solvent method to form the perovskite layer, and anneal at 130-200°C for 10-20min , to obtain a P-type perovskite layer 102 with an excess of A-site ions (Cs+ / FA+ / MA+), with a film thickness of 20-50 nm, preferably 30 nm.

[0067] Then, an intrinsic perovskite layer 101 and an n-type perovskite layer 103 are prepared on the p-type perovskite layer 102 . Specifically, a dual-source co-evaporation method was used to prepare the PbI2 and CsBr layers. Fi...

example 2

[0070] First, on the hole transport layer 104, a 10nm mixed layer of FAI and MAI is evaporated using a dual-source co-evaporation method, and a 420nm PbI2 and CsBr layer is further evaporated using a dual-source co-evaporation method. Specifically, The evaporation rate of CsBr can be adjusted as / s, the evaporation rate of PbI2 is / s, deposit 420nm PbI2 and CsBr mixed layer.

[0071]Then, configure an organic solution layer, wherein the molar ratio of FAI and FABr is 3:1, and 20% by mass of MACl is added to form a mixed solution. Then titrate 100 ul of the mixed solution layer on the mixed layer of PbI2 and CsBr, immediately spin-coat to obtain the perovskite precursor layer, and anneal at 150° C. for 30 min to form the desired perovskite layer. The pre-evaporated first layer of FAI and MAI layers reacts with PbI2 and CsBr and the mixed solution under annealing conditions to form the first layer of p-type perovskite layer 102 with excess A-site ions (Cs+ / FA+ / MA+); the midd...

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Abstract

The embodiment of the invention provides a perovskite solar cell, a laminated solar cell and a cell module, and relates to the technical field of photovoltaics. The perovskite solar cell comprises a perovskite absorption layer, wherein the perovskite absorption layer comprises an intrinsic perovskite layer, a p-type perovskite layer arranged at one side of the intrinsic perovskite layer, and an n-type perovskite layer arranged at the other side of the intrinsic perovskite layer; a hole transport layer which is arranged on one side, far away from the intrinsic perovskite layer, of the p-type perovskite layer; an electron transport layer which is arranged on one side, far away from the intrinsic perovskite layer, of the n-type perovskite layer; wherein the highest occupied molecular orbitalenergy level of the p type perovskite layer is higher than the highest occupied molecular orbital energy level of the intrinsic perovskite layer, and the lowest unoccupied molecular orbital energy level of the n type perovskite layer is lower than the lowest occupied molecular orbital energy level of the intrinsic perovskite layer. According to the embodiment of the invention, the photoelectric conversion efficiency of the perovskite solar cell can be improved.

Description

technical field [0001] The invention relates to the field of photovoltaic technology, in particular to a perovskite solar cell, a stacked solar cell and a cell assembly. Background technique [0002] Perovskite solar cells have attracted extensive attention due to their high photoelectric conversion efficiency and low cost. [0003] In traditional perovskite cells, the photogenerated carriers in the perovskite absorbing layer reach the carrier transport layer in the form of diffusion to complete the collection and transportation of photogenerated carriers. The separation probability and transmission of photogenerated carriers The rate is lower. Due to the presence of more non-radiative recombination centers (such as grain boundaries, vacancies, etc.) in the perovskite absorber layer, it is easy to cause the recombination loss of photogenerated carriers, and the slower diffusion rate of photogenerated carriers further aggravates the photogenerated The recombination probabil...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/44H01L51/46
CPCH10K85/00H10K30/10H10K30/80Y02E10/549
Inventor 徐琛
Owner LONGI GREEN ENERGY TECH CO LTD
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