A Nitride Resonant Tunneling Diode Structure Suitable for Ultraviolet Light Detection

Abstract

The invention discloses a nitride resonant tunneling diode structure suitable for ultraviolet light detection, which solves the problem that the conventional nitride resonant tunneling diode structure is not suitable for a thick light absorption layer and cannot perform ultraviolet light detection with high quantum efficiency. In the present invention, the dual-barrier resonant tunneling structure is built into the p-type doped nitride epitaxial layer / intrinsic nitride epitaxial layer / n-type doped nitride epitaxial layer, and the built-in electric field of the p-i-n structure is used to offset The built-in polarization electric field of the nitride heterojunction solves the problem of energy band lift in the GaN thick light absorbing layer, so that the nitride resonant tunneling diode structure of the thick light absorbing layer can produce resonant tunneling. The invention also introduces the AlGaN / GaN superlattice structure, utilizes the polarization field of the superlattice structure to adjust the alignment of the energy level of the quantum well and the conduction band energy level of the light absorbing layer, and enhances the peak current of the resonant tunneling.

Description

technical field [0001] The invention belongs to the field of semiconductor materials and semiconductor photodetectors, in particular to a nitride resonance tunneling diode structure suitable for ultraviolet light detection. Background technique [0002] The resonant tunneling diode is a device based on the resonant tunneling quantum effect, and its basis is a semiconductor heterostructure. hybrid collector) structure. As the external bias voltage of the resonant tunneling diode increases gradually, the tunneling probability of electrons has a sharp peak at a certain energy value, and the current-voltage curve of the diode also exhibits the characteristics of negative differential conductance. Based on the nonlinear transport characteristics of resonant tunneling diodes, in 2005, J. C. Blakesley et al. proposed a mechanism for locally regulating resonant tunneling current for photon detection [Physical review letters, 2005, 94(6), 067401], the The scheme is to use the photo...

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Problems solved by technology

However, the conventional nitride resonant tunneling diode structure is not suitable for the thick intrinsic GaN isolation layer, because the intrinsic built-in polarization electric field of the nitride material will greatly lift the energy bands of the GaN intrinsic layer and the double barrier structure layer. , even making the structure unable to resonate tunneling

figure 1 It is the energy band simulation result of the conventional nitride resonant tunneling diode structure, using a 200nm thick intrinsic GaN layer as the light absorbing layer, it can be seen that whether it is a forward bias voltage of 2V or a reverse bias voltage of 2V, the intrinsic GaN layer of 200nm The energy bands of the GaN layer are all lifted by the polarization built-in field of the nitride heterojunction, and the lifting range is huge, which seriously affects the resonant tunneling of electrons to the double barrier structure

However, there is no combination of AlGaN / GaN / AlGaN double barrier structure and p-i-n structure for photon detection technology, especially based on the aforementioned conventional nitride resonant tunneling diode structure, and there is no combination technology for ultraviolet light detection.

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