Growth crucible and method capable of adjusting atmosphere of silicon carbide single crystal growth system

Abstract

The invention discloses a growth crucible and method capable of adjusting the atmosphere of a silicon carbide single crystal growth system. The growth crucible capable of adjusting the atmosphere of the silicon carbide single crystal growth system comprises a crucible main body; a raw material cavity positioned in the crucible main body and used for filling a growth raw material of a silicon carbide single crystal; a growth cavity positioned in the crucible main body, positioned above the raw material cavity and used for growing seed crystals to obtain silicon carbide single crystal; a gas dredging cavity located in the crucible body and located below the raw material cavity, wherein a gas dredging assembly is arranged in the gas dredging cavity and used for releasing halogen gas into theraw material cavity so as to adjust the atmosphere of a growth system of the silicon carbide single crystal. The halogen gas can be released into the growth atmosphere at the initial growth stage of the crystal, the purpose of consuming excessive silicon at the initial growth stage of the crystal is achieved, the chemical composition of the growth atmosphere of the silicon carbide single crystal is further adjusted, the quality of the silicon carbide single crystal is improved, and corrosion to a graphite crucible is reduced.

Description

technical field [0001] The invention relates to the field of silicon carbide crystal growth, in particular to a growth crucible and a method capable of adjusting the atmosphere of a silicon carbide single crystal growth system. Background technique [0002] The development of smart communications, smart cars, aerospace, nuclear energy technology, and Internet of Everything technology has put forward more stringent requirements for the electronic devices that depend on it. As a new type of semiconductor, silicon carbide semiconductors have a wide bandgap (≧3.0eV), high Thermal conductivity (≧4.9W / (cm K)), high breakdown electric field, high saturation electron mobility (2×107cm / s), high thermal conductivity, low energy consumption, high pressure resistance, high temperature resistance, The incomparable advantages of other semiconductor devices such as chemical corrosion have irreplaceable advantages in high frequency, high voltage, high temperature, high power devices and ext...

AI Technical Summary

Problems solved by technology

[0004] However, the relatively high thermal stability of SiC poses significant technical difficulties for the growth of bulk crystals

Under atmospheric pressure, since silicon carbide will decompose and sublimate before melting, silicon carbide crystals cannot grow out of its melt. At high temperatures (≧1800°C), the raw materials are sublimated and most of them are decomposed into Si, SiC2, Si2C, As a result, in the early stage of crystal growth, at low sublimation temperature, the silicon-rich vapor causes the vapor non-stoichiometric ratio to be too high

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