Preparation method of porous raw material for aluminum nitride crystal growth

A technology of crystal growth and aluminum nitride, applied in crystal growth, single crystal growth, single crystal growth and other directions, can solve problems such as unfavorable raw material volatilization crystal growth, and achieve the effects of low cost, simple equipment and simple operation

Inactive Publication Date: 2021-01-08
哈尔滨科友半导体产业装备与技术研究院有限公司
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

[0005] In order to solve the problem that the existing aluminum nitride raw materials are relatively dense, which is not conducive to the volatilization of raw materials and crystal growth, the invention provides a preparation method of porous raw materials for aluminum nitride crystal growth

Method used

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  • Preparation method of porous raw material for aluminum nitride crystal growth
  • Preparation method of porous raw material for aluminum nitride crystal growth

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Embodiment 1

[0023] This embodiment provides a method for preparing a porous raw material for aluminum nitride crystal growth, comprising the following steps:

[0024] Step 1, immersing the aluminum nitride powder body in mass concentration of 2% Al(H 2 PO 4 ) 3 In the solution, the soaking time is 1h, and the aluminum nitride powder after treatment has strong hydrolysis resistance;

[0025] Step 2. Slowly add sodium alginate into deionized water and stir until the sodium alginate is completely dissolved to obtain a sodium alginate solution with a mass concentration of 0.2%. The anti-hydrolysis pretreated aluminum nitride powder is added to the sodium alginate solution, stirred at 150rpm for 1h, and then ball milled at 60rpm for 4h to obtain a mixed slurry. Ball milling can reduce the particle size of the powder and make the slurry more uniform;

[0026] Step 3. The obtained mixed slurry is poured into the mold, and the calcium chloride solution with a molar concentration of 0.5mol / L is...

Embodiment 2

[0032] This embodiment provides a method for preparing a porous raw material for aluminum nitride crystal growth, comprising the following steps:

[0033] Step 1, immersing the aluminum nitride powder body in mass concentration of 2% Al(H 2 PO 4 ) 3 In the solution, the soaking time is 2 hours, and the aluminum nitride powder after treatment has strong hydrolysis resistance;

[0034] Step 2. Slowly add sodium alginate into deionized water and stir until the sodium alginate is completely dissolved to obtain a sodium alginate solution with a mass concentration of 0.2%. The anti-hydrolysis pretreated aluminum nitride powder is added to the sodium alginate solution, stirred at 200rpm for 0.5h, and then ball milled at 70rpm for 5h to obtain a mixed slurry. Ball milling can make the particle size of the powder smaller and make the slurry more uniform;

[0035] Step 3. The obtained mixed slurry is poured into the mold, and the calcium chloride solution with a molar concentration o...

Embodiment 3

[0039] This embodiment provides a method for preparing a porous raw material for aluminum nitride crystal growth, comprising the following steps:

[0040] Step 1, immersing the aluminum nitride powder body in a mass concentration of 6% Al(H 2 PO 4 ) 3 In the solution, the soaking time is 3 hours, and the aluminum nitride powder after treatment has strong hydrolysis resistance;

[0041] Step 2. Slowly add sodium alginate into deionized water and stir until the sodium alginate is completely dissolved to obtain a sodium alginate solution with a mass concentration of 0.2%. Add the anti-hydrolysis pretreated aluminum nitride powder into the sodium alginate solution, stir at 300rpm for 1h, and then ball mill at 100rpm for 5h to obtain the mixed slurry. Ball milling can make the particle size of the powder smaller and make the slurry more uniform;

[0042] Step 3. The obtained mixed slurry is poured into the mold, and the calcium chloride solution with a molar concentration of 3mol / ...

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Abstract

The invention relates to a preparation method of a porous raw material for aluminum nitride crystal growth, and belongs to the technical field of aluminum nitride crystal raw material preparation. Inorder to solve the problems that the existing aluminum nitride raw material is relatively compact and is not beneficial to raw material volatilization and crystal growth, the invention provides a preparation method of a porous raw material for aluminum nitride crystal growth. The method comprises the following steps: adding aluminum nitride powder subjected to hydrolysis-resistant pretreatment into a sodium alginate solution, carrying out stirring and ball milling to obtain mixed slurry; and pouring the obtained mixed slurry into a mold, uniformly spraying a calcium chloride solution onto thesurface of the slurry, freeze-drying the slurry, sintering in a protective gas atmosphere, pickling, washing with water, and drying to obtain the porous aluminum nitride raw material. The method is simple to operate and low in cost, the porous raw material with the porosity of 42-50% can be prepared, volatilization of aluminum nitride is facilitated, the utilization rate of the aluminum nitride raw material is high, and the method has positive influence on growth of aluminum nitride crystals.

Description

technical field [0001] The invention belongs to the technical field of preparation of aluminum nitride crystal raw materials, and in particular relates to a method for preparing porous raw materials for growing aluminum nitride crystals. Background technique [0002] Since the start of the semiconductor industry, the upgrading of materials has gradually promoted the development of electronics and information industries. The performance of semiconductor devices has been continuously improved, and its application fields have also expanded. Aluminum nitride crystal is one of the typical representatives of the third-generation semiconductor materials. It has wide band gap, high thermal conductivity, high resistivity, good ultraviolet transmittance, high breakdown field strength and strong radiation resistance, so it is more It is suitable for manufacturing high-temperature, high-frequency, radiation-resistant and high-power devices, such as high-energy-efficiency optoelectronic ...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): C30B23/00C30B28/12C30B29/40
CPCC30B23/00C30B28/12C30B29/403
Inventor 不公告发明人
Owner 哈尔滨科友半导体产业装备与技术研究院有限公司
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