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A kind of strongly electron-withdrawing element doped rare earth orthosilicate scintillation material and its preparation method and application

An orthosilicate, electronic element technology, applied in the preparation/processing of rare earth metal compounds, luminescent materials, scintillation components, etc., can solve the problem of shortening the duration of the main amplitude component of the scintillation response, adding high content of doping ions, shortening the Issues such as emission duration, to achieve the effect of shortening the luminous decay time and rise time

Active Publication Date: 2022-02-08
SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0005] Although patent 1 (Chinese Publication No. CN108139492A) discloses to A 2 SiO 5 A-site doping of Ni, Zr, Nb, Mo, Ru, Rh, Ag, Ta, W, In, Sn, Sb, Tl, Pb, Bi ions in silicate scintillator material to realize non-radiative energy transfer from excited Part of the energy is taken away from the luminescent center, which leads to a significant shortening of the duration of the main amplitude component of the scintillation response. higher

Method used

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  • A kind of strongly electron-withdrawing element doped rare earth orthosilicate scintillation material and its preparation method and application
  • A kind of strongly electron-withdrawing element doped rare earth orthosilicate scintillation material and its preparation method and application
  • A kind of strongly electron-withdrawing element doped rare earth orthosilicate scintillation material and its preparation method and application

Examples

Experimental program
Comparison scheme
Effect test

Embodiment 1

[0054] Embodiment 1 (growth W-doped single crystal)

[0055] Single crystals were grown by the pulling method. Molar ratio WO 3 :CeO 2 :SiO2 2 :Lu 2 o 3 :Y 2 o 3 =2y:0.002:1:0.899-y:0.1 Ingredients (y=0.001, 0.003, 0.005, 0.01), fully mixed, the mixture is pressed into a block under 2500MPa cold isostatic pressure, put into an iridium crucible, through induction Heating and fully melting, and slowly growing a single crystal with a preset size from the melt after inoculation of the seed crystal to obtain Lu 1.798-2y Y 0.2 Ce 0.002 W 2y SiO 5 single crystal.

Embodiment 2

[0056] Embodiment 2 (preparation of W-doped polycrystalline powder)

[0057] According to the ingredients in Example 1, mix thoroughly and evenly, put the powder mixture into a corundum crucible, put it in a muffle furnace, and calcinate at 1600 ° C for 10 hours to undergo a solid phase reaction to obtain Lu 1.798-2y Y0.2 Ce 0.002 W 2y SiO 5 polycrystalline powder.

Embodiment 3

[0058] Embodiment 3 (preparation of W-doped ceramics)

[0059] Non-transparent: mix the ingredients according to Example 1, mix well, press the mixture into a block under 30MPa cold isostatic pressure, put it into a corundum crucible, put it in a muffle furnace, and sinter at 1600 ° C for 10 hours to undergo a solid-state reaction to obtain Lu 1.798- 2y Y 0.2 Ce 0.002 W 2y SiO 5 or Lu 1.798-2y+2y / z Y 0.2 Ce 0.002 W 2y Si (1-2y / z) o 5 Opaque ceramic. Transparent: According to the ingredients in Example 1, fully mix evenly, press the mixture into a block under 5000MPa cold isostatic pressure, and undergo a solid-phase reaction in a vacuum hot-press furnace to remove air bubbles and voids as much as possible to obtain Lu 1.798-2y Y 0.2 Ce 0.002 W 2y SiO 5 Transparent ceramic.

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Abstract

The invention relates to a strong electron-withdrawing element-doped rare earth orthosilicate scintillation material and a preparation method and application thereof. The chemical formula of the strong electron-withdrawing element-doped rare earth orthosilicate scintillation material is: RE 2(1‑x‑y+δ / 2) Ce 2x M 2y‑δ Si (1‑δ) M δ O 5 ; where RE is rare earth ion, 0<x≤0.05; M is a strong electron-withdrawing doping element, 0<y≤0.015; and 0≤δ≤10 ‑4 ; The M is selected from tungsten W, lead Pb, molybdenum Mo, tellurium Te, antimony Sb, bismuth Bi, mercury Hg, silver Ag, nickel Ni, indium In, zinc Zn, thallium Tl, niobium Nb, titanium Ti, tantalum Ta , at least one of tin Sn, cadmium Cd, technetium Tc, zirconium Zr, rhenium Re and gallium Ga.

Description

technical field [0001] The invention relates to a strong electron-absorbing element-doped rare earth orthosilicate scintillation material, a preparation method and application thereof, and belongs to the technical field of scintillation materials. Background technique [0002] Inorganic scintillation materials are crystalline energy converters that can convert the energy of high-energy photons (X / γ rays) or particles (protons, neutrons, etc.) into easily detectable ultraviolet / visible photons. Detectors made of inorganic scintillation crystals are widely used in the fields of high energy physics, nuclear physics, space physics, nuclear medicine diagnosis (XCT, PET), geological exploration and security inspection. With the rapid development of nuclear detection and related technologies, higher requirements have been placed on the performance of scintillation crystals. Traditional NaI(Tl), BGO, PWO and other scintillation crystals have been unable to meet the application requi...

Claims

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Application Information

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Patent Type & Authority Patents(China)
IPC IPC(8): C01F17/32C01F17/10C09K11/77G01T1/00G01T1/161G01T3/06
CPCC01F17/32C01F17/10C09K11/7776C09K11/7774G01T1/161G01T1/003G01T3/06C01P2002/54C01P2006/60C04B35/16C30B29/22G01T1/2023C04B2235/3224C04B2235/3225C04B2235/3229C04B2235/3258C04B2235/3298C04B2235/3256C04B2235/32C04B2235/3294C04B2235/3296C04B2235/3284C04B2235/3291C04B2235/3279C04B2235/3286C04B2235/3251C04B2235/3232C04B2235/3293C04B2235/3244C04B2235/3262C04B2235/3201C04B2235/3203C04B2235/3206C04B2235/3208C04B2235/3213C04B2235/3281C04B2235/9646C04B2235/442C04B35/62675C04B35/645C04B2235/604C04B2235/9653C30B29/34C30B11/00C01B33/20C30B28/02
Inventor 丁栋舟赵书文杨帆施俊杰袁晨王林伟徐鎔涛陈露
Owner SHANGHAI INST OF CERAMIC CHEM & TECH CHINESE ACAD OF SCI
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