Plasmon polariton enhancement-based photoelectrochemical photodetector and preparation method thereof
A photoelectrochemical and photodetector technology, which is applied in the field of photodetectors, can solve the problems that the application potential of the plasmonic enhancement effect has not been fully developed, is not conducive to improving device performance, and uneven particle distribution, so as to improve the photocurrent response and structure. The effect of simplicity and simplification of the production process
Active Publication Date: 2021-02-26
UNIV OF SCI & TECH OF CHINA
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Problems solved by technology
Such as excessive particle size, uneven particle distribution, doping caused by high-temperature calcination, etc., are not conducive to improving device performance
Traditional optoelectronic devices mainly focus on the scattering effect of large particle size (greater than 30nm) plasmonic metals, but do not pay attention to the thermal electron injection and near-field enhancement effect of small particle plasmonic metals, and the plasmonic enhancement effect has not been fully developed in optoelectronics. The application potential of the device
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[0052] Photodetectors composed of traditional MSM, Schottky junctions, and p-n / n-n junctions cannot work when the power is off. The process is complex and costly, the manufacturing precision is high, the photoresponsivity is low, and the response time cannot be adjusted. In addition, traditional optical detectors have a wide variety of materials and different preparation methods, which is not conducive to large-scale production; due to the fixed selection of materials and a single detection wavelength band, they can only be applied to specific detection scenarios and are not universal.
[0053] Common photoelectrochemical photodetectors have the following advantages: (1) they can be powered by themselves without additional power. (2) The structure is simple, the manufacturing process is low, the cost is low, and it is beneficial to large-scale production. However, the existing photoelectrochemical photodetectors are usually based on the aqueous three-electrode system. The dete...
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The photoelectrochemical photodetector comprises a photoelectrode, the photoelectrode comprises a conductive substrate and a GaN-based nanowire growing on the surface of the substrate, and the surfaceof the GaN-based nanowire is modified with a layer of uniform nanoparticles. The invention also discloses a preparation method of the photoelectrochemical photodetector. According to the GaN-based photoelectrochemical photodetector, metal Rh (or Ag, Au, Al and other metals) nanoparticles with a surface plasma enhancement effect are modified on the surfaces of AlxGa1-xN, InxGa1-xN, InyAlxGa1-x-yN,BxAlyGa1-x-yN and BxInyGa1-x-yN nanowires,hot electrons are injected into the semiconductor whilethe amount of photogenerated carriers in the semiconductor nanowires is improved, and finally, the photocurrent response of the photoelectrochemical photodetector is improved.
Description
technical field [0001] The invention relates to the technical field of photodetectors, in particular to a photoelectrochemical detector based on plasmon enhancement effect that can improve detection performance and a preparation method thereof. Background technique [0002] Photodetectors, devices that capture light signals and convert them into electrical signals, are widely used in imaging, communications, sensing, computing and emerging wearable devices. Photodetectors are widely used in various fields of military and national economy. In the visible or near-infrared band, it is mainly used for ray measurement and detection, industrial automatic control, photometry, etc.; in the infrared band, it is mainly used for missile guidance, infrared thermal imaging, infrared remote sensing, etc.; in the ultraviolet band, it is mainly used for flame detection and missile alarm. , ozone monitoring and non-line-of-sight optical communication, etc. Most of the existing photodetecto...
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IPC IPC(8): H01G9/20G01J1/42G01J1/48
CPCH01G9/205H01G9/2013G01J1/42G01J1/48Y02E10/542Y02P70/50
Inventor 孙海定汪丹浩刘鑫康阳
Owner UNIV OF SCI & TECH OF CHINA