Confinement growth aluminum oxide dielectric layer with common gate contact site and preparation method and application thereof
An aluminum oxide and dielectric layer technology, applied in circuits, electrical components, electrical solid devices, etc., can solve the problems of limiting the advantages of anodized aluminum methods, increasing the production cost, and complex protection processes, increasing the production cost, and being beneficial to the Mass production, simple operation effect
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Embodiment 1
[0079] Such as figure 1 As shown, a method for preparing an aluminum oxide dielectric layer with confinement growth of a common gate contact site comprises the following steps:
[0080] 1) Vacuum deposition gate:
[0081] A substrate is prepared, and the substrate is polyethylene naphthalate (PEN). After cleaning the substrate, dry the substrate with nitrogen gas, and evaporate an aluminum film with a thickness of 100 nm on the substrate as the grid;
[0082] 2) Use screen printing method to print a layer of photoresist material on the aluminum film as a mask, and make sure that the pattern is printed clearly, such as image 3 (3(a), 3(b) and 3(c)), curing at 60°C for 2 minutes (in order to reduce the erosion of the electrolyte in the electrolytic cell to the pattern in the mask area, the mask needs to be cured); where , the photoresist material is photoresist. The silk screen adopted in the screen printing method is 500 meshes, the moving speed of the squeegee during scr...
Embodiment 2
[0088] A method for preparing a confinement-grown aluminum oxide dielectric layer with a common gate contact site, comprising the following steps:
[0089] 1) Vacuum deposition gate:
[0090] A substrate is prepared, which is a glass slide. After cleaning the substrate, dry the substrate with nitrogen gas, and evaporate an aluminum film with a thickness of 100 nm on the substrate as the grid;
[0091] 2) Use screen printing method to print a layer of photoresist material on the aluminum film as a mask, make sure that the pattern is printed clearly, and cure at 60°C for 2 minutes (in order to reduce the erosion of the electrolyte in the electrolytic cell to the pattern in the mask area, it is necessary to curing the mask); wherein, the photoresist material is photoresist. The silk screen adopted in the screen printing method is 500 meshes, the moving speed of the squeegee during screen printing is 20mm / s, the pattern of mask is the rectangular photoresist material layer arran...
Embodiment 3
[0098] Such as Figure 9 Shown, a kind of preparation method based on screen printing patterned aluminum oxide dielectric layer and grid comprises the following steps:
[0099] a) Immerse the alumina dielectric layer of the confinement-grown alumina dielectric layer obtained in Example 2 into isopropanol, ultrasonicate for 5 minutes, blow dry with nitrogen, and print on the alumina dielectric layer by screen printing A layer of photoresist is screen-printed as a resist layer (determining that the pattern is printed clearly), cured at 80° C. for 2 minutes, wherein the photoresist is a positive photoresist, and the screen used in the screen printing method is 500 mesh. The moving speed of the scraper during screen printing is 20 mm / s, the pattern of the resist layer is a photoresist layer arranged along a rectangular matrix, and the size of the photoresist layer is a square of 700 μm×700 μm;
[0100] b) Put the substrate obtained in step a) into an etching solution until the al...
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Abstract
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