Patterned aluminum oxide dielectric layer and gate based on silk-screen printing and preparation method and application of patterned aluminum oxide dielectric layer
A technology of screen printing and alumina, which is applied in the manufacture of circuits, electrical components, semiconductors/solid-state devices, etc., can solve the problems of limiting the advantages of anodized alumina methods, increasing preparation costs, and complicated protection processes, so as to increase preparation costs, Facilitate large-scale production and simple operation
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Embodiment 1
[0079] Such as figure 1 As shown, a method for preparing an aluminum oxide dielectric layer with confinement growth of a common gate contact site comprises the following steps:
[0080] 1) Vacuum deposition gate:
[0081] A substrate is prepared, and the substrate is polyethylene naphthalate (PEN). After cleaning the substrate, dry the substrate with nitrogen gas, and evaporate an aluminum film with a thickness of 100 nm on the substrate as the grid;
[0082] 2) Use screen printing method to print a layer of photoresist material on the aluminum film as a mask, and make sure that the pattern is printed clearly, such as image 3 (3(a), 3(b) and 3(c)), curing at 60°C for 2 minutes (in order to reduce the erosion of the electrolyte in the electrolytic cell to the pattern in the mask area, the mask needs to be cured); where , the photoresist material is photoresist. The silk screen adopted in the screen printing method is 500 meshes, the moving speed of the squeegee during scr...
Embodiment 2
[0088] A method for preparing a confinement-grown aluminum oxide dielectric layer with a common gate contact site, comprising the following steps:
[0089] 1) Vacuum deposition gate:
[0090] A substrate is prepared, which is a glass slide. After cleaning the substrate, dry the substrate with nitrogen gas, and evaporate an aluminum film with a thickness of 100 nm on the substrate as the grid;
[0091] 2) Use screen printing method to print a layer of photoresist material on the aluminum film as a mask, make sure that the pattern is printed clearly, and cure at 60°C for 2 minutes (in order to reduce the erosion of the electrolyte in the electrolytic cell to the pattern in the mask area, it is necessary to curing the mask); wherein, the photoresist material is photoresist. The silk screen adopted in the screen printing method is 500 meshes, the moving speed of the squeegee during screen printing is 20mm / s, the pattern of mask is the rectangular photoresist material layer arran...
Embodiment 3
[0098] Such as Figure 9 Shown, a kind of preparation method based on screen printing patterned aluminum oxide dielectric layer and grid comprises the following steps:
[0099] a) Immerse the alumina dielectric layer of the confinement-grown alumina dielectric layer obtained in Example 2 into isopropanol, ultrasonicate for 5 minutes, blow dry with nitrogen, and print on the alumina dielectric layer by screen printing A layer of photoresist is screen-printed as a resist layer (determining that the pattern is printed clearly), cured at 80° C. for 2 minutes, wherein the photoresist is a positive photoresist, and the screen used in the screen printing method is 500 mesh. The moving speed of the scraper during screen printing is 20 mm / s, the pattern of the resist layer is a photoresist layer arranged along a rectangular matrix, and the size of the photoresist layer is a square of 700 μm×700 μm;
[0100] b) Put the substrate obtained in step a) into an etching solution until the al...
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Abstract
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