A kind of Schottky type perovskite photodetector and preparation method thereof
A photodetector and perovskite technology, applied in photovoltaic power generation, electrical solid-state devices, semiconductor/solid-state device manufacturing, etc.
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Embodiment example 1
[0028] (1) Prepare a 15% PI (polyimide) solution, weigh 0.57 g of biphenyltetracarboxylic dianhydride and 0.2 g of p-phenylenediamine in turn, add them to 5 mL of N-methylpyrrolidone (NMP), and stir to dissolve .
[0029] (2) in cesium lead bromide (CsPbBr 3 ) spin-coating PI (polyimide) solution on perovskite single crystal, after spin-coating, cesium lead bromide (CsPbBr 3 ) The perovskite single crystal was placed on a hot stage and heated at 80 °C for 10 minutes to obtain a PI film with a thickness of 300 nm.
[0030] (3) A silver electrode was vapor-deposited on the PI (polyimide) film.
[0031] (4) in cesium lead bromide (CsPbBr 3 ) A gold electrode was evaporated on the other side of the perovskite single crystal.
Embodiment example 2
[0033] (1) Prepare a 5% PI (polyimide) solution, weigh 0.19 g of biphenyltetracarboxylic dianhydride and 0.07 g of p-phenylenediamine in turn, add them to 5 mL of N-methylpyrrolidone (NMP), and stir to dissolve .
[0034] (2) in cesium lead bromide (CsPbBr 3 ) spin-coated PI (polyimide) solution on perovskite multi-wafer, after spin-coating, cesium lead bromide (CsPbBr 3) The perovskite multi-wafer was placed on a hot stage and heated at 80 °C for 10 minutes to obtain a PI film with a thickness of 20 nm.
[0035] (3) A silver electrode was vapor-deposited on the PI (polyimide) film.
[0036] (4) in cesium lead bromide (CsPbBr 3 ) A gold electrode was evaporated on the other side of the perovskite polymorph.
Embodiment example 3
[0038] (1) Prepare a 15% PI (polyimide) solution, weigh 0.57 g of biphenyltetracarboxylic dianhydride and 0.2 g of p-phenylenediamine in turn, add them to 5 mL of dimethylformamide (DMF), and stir to dissolve .
[0039] (2) in cesium lead bromide (CsPbBr 3 ) spin-coating PI (polyimide) solution on perovskite single crystal, after spin-coating, cesium lead bromide (CsPbBr 3 ) The perovskite single crystal was placed on a hot stage and heated at 80 °C for 10 minutes to obtain a PI film with a thickness of 300 nm.
[0040] (3) A silver electrode was vapor-deposited on the PI (polyimide) film.
[0041] (4) in cesium lead bromide (CsPbBr 3 ) A gold electrode was evaporated on the other side of the perovskite single crystal.
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