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Schottky type perovskite photoelectric detector and preparation method thereof

A photodetector, perovskite technology, applied in photovoltaic power generation, electric solid-state devices, semiconductor/solid-state device manufacturing, etc., to achieve the effect of suppressing excessive dark current, reducing dark current and ion migration, and suppressing dark current drift

Active Publication Date: 2021-03-09
HUAZHONG UNIV OF SCI & TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

AI Technical Summary

Problems solved by technology

[0004] For the above defects or improvement needs of existing perovskite photodetectors, the object of the present invention is to provide a Schottky type perovskite photodetector and a preparation method thereof, the Schottky type perovskite photodetector It is constructed by using the metal-semiconductor rectifying contact characteristics, and has a good inhibitory effect on the dark current through the Schottky barrier; at the same time, by spin-coating a layer of polyimide PI film on the surface of the perovskite, using polyimide The passivation of the perovskite surface and the barrier reaction between the metal and the perovskite can reduce the dark current and ion migration of the perovskite photodetector by the amine PI thin film, thereby effectively suppressing the dark state of the perovskite photodetector when it is working. Excessive current and dark current drift issues

Method used

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  • Schottky type perovskite photoelectric detector and preparation method thereof
  • Schottky type perovskite photoelectric detector and preparation method thereof
  • Schottky type perovskite photoelectric detector and preparation method thereof

Examples

Experimental program
Comparison scheme
Effect test

Embodiment example 1

[0028] (1) Prepare 15% PI (polyimide) solution, weigh 0.57g of biphenyltetracarboxylic dianhydride and 0.2g of p-phenylenediamine in turn, add it to 5mL of N-methylpyrrolidone (NMP), stir to dissolve .

[0029] (2) In cesium lead bromide (CsPbBr 3 ) spin coating PI (polyimide) solution on perovskite single crystal, after spin coating, cesium lead bromide (CsPbBr 3 ) The perovskite single crystal was placed on a hot stage and heated at 80° C. for 10 minutes to obtain a PI film with a thickness of 300 nm.

[0030] (3) Evaporate a silver electrode on the PI (polyimide) film.

[0031] (4) In cesium lead bromide (CsPbBr 3 ) gold electrode on the other side of the perovskite single crystal.

Embodiment example 2

[0033] (1) Prepare 5% PI (polyimide) solution, weigh 0.19g of biphenyltetracarboxylic dianhydride and 0.07g of p-phenylenediamine in turn, add it to 5mL of N-methylpyrrolidone (NMP), stir to dissolve .

[0034] (2) In cesium lead bromide (CsPbBr 3 ) perovskite multi-chip spin coating PI (polyimide) solution, after spin coating, cesium lead bromide (CsPbBr 3) The perovskite multi-chip was placed on a hot stage and heated at 80°C for 10 minutes to obtain a PI film with a thickness of 20nm.

[0035] (3) Evaporate a silver electrode on the PI (polyimide) film.

[0036] (4) In cesium lead bromide (CsPbBr 3 ) on the other side of the perovskite multi-wafer by evaporating gold electrodes.

Embodiment example 3

[0038] (1) Prepare 15% PI (polyimide) solution, weigh 0.57g of biphenyltetracarboxylic dianhydride and 0.2g of p-phenylenediamine in turn, add them to 5mL of dimethylformamide (DMF), stir to dissolve .

[0039] (2) In cesium lead bromide (CsPbBr 3 ) spin coating PI (polyimide) solution on perovskite single crystal, after spin coating, cesium lead bromide (CsPbBr 3 ) The perovskite single crystal was placed on a hot stage and heated at 80° C. for 10 minutes to obtain a PI film with a thickness of 300 nm.

[0040] (3) Evaporate a silver electrode on the PI (polyimide) film.

[0041] (4) In cesium lead bromide (CsPbBr 3 ) gold electrode on the other side of the perovskite single crystal.

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Abstract

The invention belongs to the technical field of semiconductor photoelectric detectors, and discloses a Schottky type perovskite photoelectric detector and a preparation method thereof. The Schottky type perovskite photoelectric detector comprises a first metal electrode (1), a perovskite light absorption layer (2), a polyimide PI layer (3) and a second metal electrode (4) which are connected in sequence. The work function of the metal material adopted by the first metal electrode (1) is high, and the work function of the metal material adopted by the second metal electrode (4) is low. The Schottky barrier has a good inhibition effect on dark current; meanwhile, a layer of polyimide (PI) film is spin-coated on the surface of the perovskite, and dark current and ion migration of the perovskite photoelectric detector are reduced by utilizing passivation of the polyimide (PI) film on the surface of the perovskite and a reaction effect of blocking metal and the perovskite; therefore, the problems of overlarge dark current and dark current drift when the perovskite photoelectric detector works are effectively inhibited.

Description

technical field [0001] The invention belongs to the technical field of semiconductor photodetectors, and more specifically relates to a Schottky-type perovskite photodetector and a preparation method thereof. Background technique [0002] A photodetector is a device that captures light signals in a specific wavelength range and converts them instantly into electrical signals. Photodetectors are widely used in optical imaging, optical communication, automatic control, biochemical sensing and other fields. Therefore, it is of great significance to develop photodetectors with superior performance. Semiconductor photodetectors can be classified into photoconductive detectors, photodiodes and phototransistors. Currently, photodetectors based on semiconductor materials such as silicon, germanium, indium, gallium arsenide, and gallium nitride are widely used in commercial products to cover different spectral ranges due to their different band gaps. [0003] Compared with the abo...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L51/42H01L51/44H01L51/46H01L51/48
CPCH10K71/00H10K30/10H10K30/80H10K30/88Y02E10/549
Inventor 牛广达杜鑫源唐江逄锦聪潘伟程朱劲松
Owner HUAZHONG UNIV OF SCI & TECH
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