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Graphene-doped full-flexible magnetoelectric heterojunction and preparation method thereof

A fully flexible, graphene technology, applied in the parts of electromagnetic equipment, the manufacture/processing of electromagnetic devices, the selection of materials, etc. problems, to achieve the effect of selectable device structure, controllable number of graphene layers, and reduced electric field modulation

Active Publication Date: 2021-03-12
成都齐兴真空镀膜技术有限公司
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  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

However, most of the current bulk magnetoelectric devices are large in size, large in regulation voltage, and difficult to be compatible with semiconductor processes.
However, the thin-film magnetoelectric device has low coupling effect due to the clamping effect of the substrate, which seriously restricts the performance of the device.
Facing the constraints of the substrate in the research of thin-film magnetoelectric devices, the magnetoelectric coupling effect is greatly restricted by the substrate, and it is difficult to meet the increasing demand for flexible electronic devices. The present invention designs a graphene-doped fully flexible magnetoelectric device. Fabrication method of heterojunction and confirmation of its magnetoelectric coupling performance

Method used

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  • Graphene-doped full-flexible magnetoelectric heterojunction and preparation method thereof
  • Graphene-doped full-flexible magnetoelectric heterojunction and preparation method thereof
  • Graphene-doped full-flexible magnetoelectric heterojunction and preparation method thereof

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preparation example Construction

[0029] A preparation method of graphene-doped fully flexible magnetoelectric heterojunction, such as figure 2 shown, including the following steps:

[0030] Step 1. Paste the polyimide substrate with adhesive on one side on the iron sheet, and clean it with alcohol or the like.

[0031] Step 2, using CO 2 The laser engraving machine carbonizes the polyimide substrate, and its specific process conditions are: the laser current is 3.5mA, and the laser scanning speed is 100mm / s. The carbonized material was confirmed to be multi-layer graphene by Raman spectroscopy, and the graphene showed a foamy porous structure. The results were as follows: Figure 5 shown.

[0032] Step 3, disperse the P(VDF-TrFE) polymer powder with a ratio of 70 / 30mol% in dimethylformamide to form a P(VDF-TrFE) solution; use a pipette gun to quantitatively absorb P(VDF-TrFE) solution, dropped onto the surface of the graphene film.

[0033] Step 4, place the obtained P(VDF-TrFE) / graphene / PI sample in an...

Embodiment 2

[0042] The difference between embodiment 2 and embodiment 1 is: in step 6, the ferromagnetic thin film Co 40 Fe 40 B 20 The working pressure is 0.9Pa, the sputtering power is 200W, the protective gas is an inert gas, an external magnetic field of 250Oe parallel to the direction of the substrate is provided during the sputtering process, the sputtering time is 10min, and the sputtering thickness is 200nm. The Co 40 Fe 40 B 20 The purity of the alloy target is not less than 99.99%. All the other steps are the same as in Example 1.

[0043] Figure 7 It is the magnetoelectric effect test curve of the flexible magnetoelectric heterojunction obtained in Example 2. The VSM curve shows that the squareness and magnetic properties of the magnetoelectric heterojunction are worse than those of Example 1, but the magnetoelectric effect of the heterojunction is still obvious. Under the electric field of 5V and 10V, its residual magnetization Mr changes.

[0044] Similarly, followi...

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Abstract

The invention discloses a graphene-doped full-flexible magnetoelectric heterojunction and a preparation method thereof, and belongs to the technical field of functional composite material preparation.A flexible polyimide substrate, a multi-layer graphene film, a P (VDF-TrFE) ferroelectric layer, a metal ferromagnetic layer and a tantalum protective layer are sequentially arranged from bottom to top; according to the CO2 infrared laser carbonized polyimide substrate, the graphene-doped full-flexible magnetoelectric film can be obtained by preparing the magnetoelectric heterojunction on the polyimide substrate, the problem that most of existing magnetoelectric composite structures are constrained by the clamping effect of the substrate is solved, the preparation process is simple, preparation and testing can be conducted in the atmosphere, and the problem that the preparation process of the flexible magnetoelectric heterojunction prepared from the ionic glue is complex is solved.

Description

technical field [0001] The invention belongs to the technical field of flexible electronic devices, and in particular relates to a preparation method of a graphene-doped fully flexible magnetoelectric heterojunction. Background technique [0002] With the rapid development of semiconductor technology and microelectronics technology, miniaturization, multi-function and adjustability have become the development trend of electronic components. Multiferroic materials have two or more ferro-orders at the same time, including (anti) ferroelectricity, (anti) ferromagnetism and (anti) ferroelasticity, and different ferro-orders can be coupled with each other, so as to realize different Mutual regulation among sequence parameters. Therefore, multiferroic materials can realize the mutual coupling among multi-physical fields such as force, electricity, and magnetism, and have important application prospects in the field of small-sized, fast-response, and low-power magnetoelectric devi...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L43/12H01L43/02H01L43/10H10N50/01H10N50/80
CPCH10N50/80H10N50/01H10N50/85
Inventor 文丹丹陈霞骆大森黎人溥崔巍邸克刘宇
Owner 成都齐兴真空镀膜技术有限公司
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