Preparation process of silicon heterojunction solar cell

A preparation process and technology for solar cells, applied in sustainable manufacturing/processing, circuits, electrical components, etc., can solve problems affecting the long-term reliability of components, and achieve the effect of ensuring long-term reliability, ensuring contact, and good mechanical contact

Active Publication Date: 2021-04-02
SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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  • Claims
  • Application Information

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Problems solved by technology

[0003] The purpose of the present invention is to provide a preparation process for silicon heterojunction solar cells, so as to solve the problem that long-term continuous annealing is not conducive to the formation of silver electrodes and solder ribbons in the preparation process of silicon heterojunction solar cells in the prior art. Good mechanical contact, issues that seriously affect the long-term reliability of the component

Method used

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  • Preparation process of silicon heterojunction solar cell
  • Preparation process of silicon heterojunction solar cell

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Embodiment 1

[0031] see figure 1 , this embodiment provides a two-step annealing process design for a high-efficiency silicon heterojunction solar cell, and the manufacturing process of the cell includes:

[0032] 1) Use the standard RCA cleaning process to remove organic matter and metal ions on the surface of the silicon wafer;

[0033] 2) Place the RCA-cleaned silicon wafer in 2% HF aqueous solution for 2-5 minutes to remove the natural oxide layer on the surface;

[0034] 3) Place the above-mentioned silicon wafer in a drying machine with a nitrogen protection atmosphere, and shake off the remaining water stains on the surface;

[0035] 4) Deposit 4 to 7 nanometers of intrinsic a-Si:H or a-SiO:H on both surfaces of the clean silicon wafer respectively, and the growth process adopts PECVD or Cat-CVD;

[0036] 5) Deposit 4-7nm N-type and P-type a-Si:H or a-SiO:H on the surface of two intrinsic a-Si:H or a-SiO:H respectively, and the growth process adopts PECVD or Cat-CVD ;

[0037] 6...

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Abstract

The invention provides a preparation process of a silicon heterojunction solar cell. The preparation process comprises the following steps: 101, cleaning a silicon wafer; 102, carrying out amorphous silicon deposition; 103, carrying out TCO thin film deposition; 104, carrying out silk-screen printing; and 105, annealing after silk-screen printing; wherein a step 106 annealing before silk-screen printing is added between the step 103 and the step 104, the annealing temperature of the step 106 is 170-220 DEG C, the time of the step 106 is 30-60 min, and the annealing atmosphere is air. Comparedwith the prior art, the preparation process of the silicon heterojunction solar cell provided by the invention has the advantages that a one-step annealing process is specially added, and is set afterTCO film deposition and before silk-screen printing, so that the filling factor of the silicon heterojunction solar cell is improved, good mechanical contact between the electrode and the welding strip is ensured, and the long-term reliability of the whole assembly is ensured.

Description

technical field [0001] The invention relates to the field of silicon heterojunction solar cells, in particular to a preparation process for silicon heterojunction solar cells. Background technique [0002] Compared with traditional silicon solar cells, crystalline silicon / amorphous silicon heterojunction (SHJ) solar cells are manufactured using low-temperature process manufacturing technology. Due to their high photoelectric conversion efficiency and small temperature coefficient, they can be made into ultra-thin flexible cells. Typical SHJ solar cells use low-temperature silver paste to make electrodes. After the silver paste is printed by screen printing technology, it is annealed at 160-230°C for 20 minutes to evaporate the organic matter and form a metallic silver electrode. Experiments have found that longer annealing treatment can further increase the fill factor (FF) of SHJ solar cells. However, too long annealing treatment will lead to two technical problems: 1) th...

Claims

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Application Information

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Patent Type & Authority Applications(China)
IPC IPC(8): H01L31/20H01L31/0747
CPCH01L31/202H01L31/208H01L31/0747Y02E10/50Y02P70/50
Inventor 刘文柱黄圣磊李晓东李振飞姚宇波
Owner SHANGHAI INST OF MICROSYSTEM & INFORMATION TECH CHINESE ACAD OF SCI
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