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Multiplying perovskite-organic composite photoelectric detector and preparation method thereof

A photodetector, perovskite technology, applied in photovoltaic power generation, electric solid state devices, semiconductor/solid state device manufacturing, etc. Conditions and processes, the effect of high detection rates

Inactive Publication Date: 2021-04-16
SOUTH CHINA UNIV OF TECH
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  • Summary
  • Abstract
  • Description
  • Claims
  • Application Information

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Problems solved by technology

Although these methods can produce photoelectric multiplication, they lead to poor quality of perovskite film and a significant drop in other photoelectric properties such as detectivity. High-performance devices with reduced film quality

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  • Multiplying perovskite-organic composite photoelectric detector and preparation method thereof
  • Multiplying perovskite-organic composite photoelectric detector and preparation method thereof
  • Multiplying perovskite-organic composite photoelectric detector and preparation method thereof

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Embodiment

[0040] like figure 1 shown. The invention discloses a multiplication photodetector based on organic-inorganic hybrid perovskite, which comprises a transparent substrate 1, an anode 2, a hole transport layer 3, a perovskite layer 4, and a spacer layer 5 from the incident direction of light. , electron transport layer 6, electron capture layer 7, hole blocking layer 8 and metal cathode 9;

[0041] In this embodiment, the transparent substrate is glass, the anode is indium tin oxide (ITO), the hole transport layer is PTAA, the thickness is 30-50nm, and the A-site cation of the perovskite layer is FA + 、MA + Mixed, B-site metal ion is Pb 2+ , the halide anion is I - and a small amount of Cl - , the spacer layer is TAPC and C 60 The blend film, in which the mass fraction of TAPC is 30%, the thickness is 10nm, and the electron transport layer is C 60 , the thickness is 50nm, and the electron trapping layer is MoO 3 and C 60 The blend film with a thickness of 10nm, in which ...

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Abstract

The invention discloses a multiplication type perovskite organic composite photoelectric detector and a preparation method thereof. The device structurally comprises a transparent substrate, an anode, a hole transport layer, a perovskite layer, a spacer layer, an electron transport layer, an electron capture layer, a hole transport side and a metal cathode in sequence, wherein the perovskite layer is a perovskite thin film prepared by a spin-coating soaking dynamic spin-coating method, the spacer layer is a blending layer of TAPC and C60 or C70, and the electron capture layer is a blending layer of MoO3 and C60 or C70. According to the invention, the electron capture layer is evaporated on the perovskite layer, the damage to the perovskite film is reduced while the photomultiplication effect is obtained by using the electron capture induced hole tunneling injection mechanism, and the perovskite material does not need to be prepared in a glove box, so the application of the perovskite material in the direction of a photoelectric detector is expanded.

Description

technical field [0001] The invention relates to the field of optoelectronic devices, in particular to a multiplication type perovskite-organic composite photodetector and a preparation method thereof. Background technique [0002] Photodetectors are devices that convert optical signals into electrical signals. They play an important role in the field of optical information technology and are widely used in various fields such as consumer electronics, industrial control, environmental monitoring, optical communication, military and medical treatment. The working principle of the common organic photodetector is mainly photodiode type, that is, the material absorbs sunlight to form excitons, and the excitons are separated into electrons and holes at the interface between the donor and the acceptor, and diffuse to both ends of the device and are absorbed Electrodes at both ends collect current. The external quantum efficiency of the photodiode structure photodetector is less th...

Claims

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Application Information

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IPC IPC(8): H01L51/42H01L51/46H01L51/48
CPCY02E10/549
Inventor 杨德志陈如刚马东阁
Owner SOUTH CHINA UNIV OF TECH
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