Horizontal homojunction bipolar transistor and preparation method thereof

A bipolar transistor and homojunction technology, applied in the field of microelectronics, can solve the problem of low amplification factor, achieve high common emitter amplification factor, high amplification factor, and fewer types of materials
CN112687737APending Publication Date: 2021-04-20HUAZHONG UNIV OF SCI & TECH
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Patent Information

Authority / Receiving Office
CN · China
Current Assignee / Owner
HUAZHONG UNIV OF SCI & TECH
Publication Date
2021-04-20

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Abstract

The invention discloses a horizontal homojunction bipolar transistor and a preparation method thereof, and belongs to the technical field of microelectronics, the horizontal homojunction bipolar transistor comprises P-type doped monocrystalline silicon, a SiO2 oxide layer, an N-type MoS2 film, a P-type MoS2 film and electrode layers; wherein the SiO2 oxide layer is located on the upper surface of the P-type doped monocrystalline silicon; the N-type MoS2 thin film and the P-type MoS2 thin film are both located on the upper surface of the SiO2 oxide layer, and the N-type MoS2 thin film and the P-type MoS2 thin film are transversely connected; wherein the electrode layers are respectively positioned on the upper surfaces of the N-type MoS2 film and the P-type MoS2 film, and the electrode layers are not connected with each other. The N-type MoS2 thin film and the P-type MoS2 thin film both take MoS2 as carriers, and the carriers are high in mobility and few in interface state, so that the corresponding horizontal homojunction bipolar transistor is high in amplification coefficient; besides, the horizontal homojunction bipolar transistor provided by the invention can be provided with a very small base region width, and the carrier concentration of the emitter region is far greater than the carrier concentration of the base region, so that a very high common emitter amplification coefficient is realized.
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Description

technical field

[0001] The invention belongs to the technical field of microelectronics, and more specifically relates to a horizontal homojunction bipolar transistor and a preparation method thereof. Background technique

[0002] In recent years, two-dimensional transition metal dichalcogenides (TMDCs) have attracted extensive attention due to their excellent optical, acoustic, electrical, mechanical, and thermal properties. in MoS 2 As an example, the intrinsic MoS 2 It is an n-type semiconductor, and its bandgap width changes with the number of layers. Single-layer MoS 2 It is a direct bandgap semiconductor with a forbidden band width of 1.8eV. With MoS 2 With the increase of the number of layers, the forbidden band width gradually decreases to 1.2eV. MoS 2 With extremely high carrier mobility, monolayer MoS 2 The carrier mobility can reach 410cm 2 V -1 the s -1 , multilayer carrier mobility up to 500cm 2 V -1 the s -1 .

[0003] A bipolar transistor (Bipolar...

Claims

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